PUOLOP-PTD7N65

PTD7N65  

650V/7A N-Channel

A

d

vanced Power MOSFET  

Features  

■

R  

(Typical 1.

0

Ω

)@V =10V  

DS(on)  

GS  

■

Improved dv/dt Capability, High Ruggedness  

■

100% Avalanche

T

e

sted  

■

Maximum Junction

T

e

mperature Range (150°C)  

TO

‐

252  

Absolute Maximum Ratings  

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings onl

y

.

F

unctional operation above the  

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may  

affect device reliabilit

y

.  

Symbol  

Parameter  

Rating  

Unit  

Common Ratings (T

J

=25°C Unless Otherwise Noted)  

V

GS  

Gate-Source Voltage  

±30  

650  

V

V

Drain-Source Breakdown Voltage  

Maximum Junction

T

e

m

perature  

Storage

T

e

m

perature Range  

Diode Continuous Forward Current  

V

(BR)DSS  

-50 to 150  

–

–

50 to 150  

7

°C  

°C  

A

T

J  

T

STG  

I

S  

Mounted on Large Heat Sink  

(T =25°C Unless Otherwise Noted)  

J

I

DM  

Pulse Drain Current

T

e

sted (Sillicon Limit)  

A

A

(Note1)  

28  

7

=25°C  

T

C  

Continuous Drain current@V

GS

=10V  

Maximum Power Dissipation  

I

D  

P

D  

90  

W

(Note2)  

385  

E

AS  

R



JC  

R



JA  

Sing Pulsed Avalanche Energy  

mJ  

Thermal Resistance Junction−to−Case  

Thermal Resistance Junction−to−Ambient  

1.39  

62  

°C/W  

°C/W  

Note :  

1. Repetitive Rating:Pulse width limited by maximum junction temperature.  

2. IL=15.7mH,IAS=7 A,VDD=50V,RG=2

5

Ω

,Tj=25

°C  

–

1

–  

2018-8-22  

PTD7N65  

650V/7A N-Channel

A

d

vanced Power MOSFET  

Symbol  

Parameter  

Condition  

Min.  

Typ.  

Max.  

Unit  

Static Electrical Characteristics @ T

J

= 25°C (unless otherwise stated)  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain current(

T

c

=25

℃

)  

Gate-Body Leakage Current  

VGS=0V ID=250μA  

VDS=650

V

,

VGS=0V  

VGS=±30

V

,VDS=0V  

VDS=VGS,ID=250μA  

VGS=10V,ID=3.5A  

650  

—  

—  

—  

—  

1

V

μA  

nA  

V

V

(BR)DSS  

I

DSS  

—  

±100  

4

I

GSS  

3

Gate Threshold Voltage  

2

V

GS(TH)  

R

DS(ON)  

Drain-Source On-State Resistance

 

note A  

—  

1.0  

1.3  

Ω

note B  

Dynamic Electrical Characteristics @ T

J

= 25°C (unless otherwise stated)  

Input Capacitance  

—  

930  

100  

4.5  

16  

—  

—  

—  

—  

—  

—  

pF  

pF  

pF  

nC  

nC  

nC  

C

iss  

VDS=25

V

,VGS=0V,  

f=1MHz  

Output Capacitance  

—  

—  

—  

—  

—  

C

oss  

Reverse Transfer Capacitance  

C

rss  

Q

g  

To

t

al Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

VDS=520V,ID=7A  

VGS=10V  

4

Q

gs  

Q

gd  

3.6  

Switching Characteristics

note B  

26  

17  

57  

23  

Turn-on Delay Time  

—  

—  

—  

—  

—  

—  

—  

—  

nS  

nS  

nS  

nS  

t

d(on)  

VDS=300V  

ID=7A,  

Turn-on Rise Time  

t

r  

RG=25Ω  

VGS=10V  

Turn-Off Delay Time  

t

d(off)  

Turn-Off Fall Time  

t

f  

Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)  

Forward on voltage  

IS= 5 A,VGS=0V  

—  

0.85  

1.4  

V

V

SD  

Note:  

A: Pulse Test: pulse width ≤ 300 us, duty cycle ≤ 2%  

B:Guranteed by design, not subject to production testing.  

–

2

–  

2018-8-22  

PTD7N65  

650V/7A N-Channel

A

d

vanced Power MOSFET  

Typical characteristic curve:  

–

3

–  

2018-8-22  

PTD7N65  

650V/7A N-Channel

A

d

vanced Power MOSFET  

–

4

–  

2018-8-22  

PTD7N65  

650V/7A N-Channel

A

d

vanced Power MOSFET  

Test Circuit and Waveform  

Gate Charge Test Circuit and Waveform  

Switching time test circuit and waveform  

Reverse Recovery Test Circuit and Waveform  

Avalanche Test Circuit and Waveform  

5

/

10  

PowerCore

5

/  

–

5

–  

201

7

8-8-22