PUOLOP-PTF10N65

PTF10N65  

650V/10A N-Channel

A

d

vanced Power MOSFET  

Features  

■

R  

(Typical 0.

6

Ω

)@V =10V  

DS(on)  

GS  

■

Improved dv/dt Capability, High Ruggedness  

■

100% Avalanche

T

e

sted  

■

Maximum Junction

T

e

mperature Range (150°C)  

G D S  

TO-220F  

Absolute Maximum Ratings  

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings onl

y

.

F

unctional operation above the  

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may  

affect device reliabilit

y

.  

Symbol  

Parameter  

Rating  

Unit  

Common Ratings (T

J

=25°C Unless Otherwise Noted)  

V

GS  

Gate-Source Voltage  

±30  

650  

V

V

Drain-Source Breakdown Voltage  

Maximum Junction

T

e

m

perature  

Storage

T

e

m

perature Range  

Diode Continuous Forward Current  

V

(BR)DSS  

-50 to 150  

–

–

50 to 150  

10  

°C  

°C  

A

T

J  

T

STG  

I

S  

Mounted on Large Heat Sink  

(T =25°C Unless Otherwise Noted)  

J

I

DM  

Pulse Drain Current

T

e

sted (Sillicon Limit)  

40  

10  

39  

A

A

(Note  

=25°C  

T

C  

Continuous Drain current@V

GS  

Maximum Power Dissipation  

=10V  

I

D  

P

D  

W

Sing Pulsed Avalanche Energy

(Note2)  

Thermal Resistance Junction−to−Case  

Thermal Resistance Junction−to−Ambient  

mJ  

°C/W  

°C/W  

900  

3.2  

65  

E

AS  

R



JC  

R



JA  

Note :  

1. Repetitive Rating:Pulse width limited by maximum junction temperature.  

2. IL=18mH,IAS=10 A,VDD=50V,RG=2

5

Ω

,Tj=25

°C  

–

1

–  

2018-8-22  

PTF10N65  

650V/10A N-Channel

A

d

vanced Power MOSFET  

Symbol  

Parameter  

Condition  

Min.  

Typ.  

Max.  

Unit  

Static Electrical Characteristics @ T

J

= 25°C (unless otherwise stated)  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain current(

T

c

=25

℃

)  

Gate-Body Leakage Current  

VGS=0V ID=250μA  

VDS=650

V

,

VGS=0V  

VGS=±30

V

,VDS=0V  

VDS=VGS,ID=250μA  

VGS=10V,ID=2.5A  

650  

—  

—  

—  

—  

1

V

μA  

nA  

V

V

(BR)DSS  

I

DSS  

—  

±100  

4

I

GSS  

3

Gate Threshold Voltage  

2

V

GS(TH)  

Drain-Source On-State Resistance

 

note A  

—  

0.6  

0.8  

Ω

R

DS(ON)  

Dynamic Electrical Characteristics @ T

J

= 25°C (unless otherwise stated)

note B  

Input Capacitance  

—  

—  

—  

—  

—  

—  

1120  

130  

4.9  

—  

—  

—  

—  

—  

—  

pF  

pF  

pF  

nC  

nC  

nC  

C

iss  

VDS=25

V

,VGS=0V,  

f=1MHz  

Output Capacitance  

C

oss  

Reverse Transfer Capacitance  

C

rss  

Q

g  

21  

To

t

al Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

VDS=520V,ID=10A  

VGS=10V  

7.5  

Q

gs  

Q

gd  

6

Switching Characteristic

s

note B  

38  

70  

53  

35  

Turn-on Delay Time  

—  

—  

—  

—  

—  

—  

—  

—  

nS  

nS  

nS  

nS  

t

d(on)  

VDS=300V  

ID=10A  

Turn-on Rise Time  

t

r  

RG=25Ω  

VGS=10V  

Turn-Off Delay Time  

t

d(off)  

Turn-Off Fall Time  

t

f  

Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)  

Forward on voltage  

IS= 10 A,VGS=0V  

—  

0.85  

1.4  

V

V

SD  

Note:  

A: Pulse Test: pulse width ≤ 300 us, duty cycle ≤ 2%  

B:Guranteed by design, not subject to production testing.  

–

2

–  

2018-8-22  

PTF10N65  

650V/10A N-Channel

A

d

vanced Power MOSFET  

Typical characteristic curve:  

–

3

–  

2018-8-22  

PTF10N65  

650V/10A N-Channel

A

d

vanced Power MOSFET  

–

4

–  

2018-8-22  

PTF10N65  

650V/10A N-Channel

A

d

vanced Power MOSFET  

Test Circuit and Waveform  

Gate Charge Test Circuit and Waveform  

Switching time test circuit and waveform  

Reverse Recovery Test Circuit and Waveform  

Avalanche Test Circuit and Waveform  

PowerCore

5

/  

–

5

–  

2018-8-22