PUOLOP-PTS4614
| Part # | PUOLOP-PTS4614 |
Download  | PUOLOP-PTS4614 |
PTS4614
40V/7A N+P Channel Advanced Power MOSFET
Features
•
Low R
DS(on)
@V
GS
=5V
• 5V Logic Level Control
• N+P Dual Channel SOP8 Package
• Pb−Free, RoHS Compliant
Key Items
BVDSS
ID
NMOS PMOS
Unit
V
40
8
-40
7
A
R
DSON1
R
DSON2
14
19
28
33
mΩ
mΩ
Applications
•
High Side Load Switch
• Battery Switch
• Optimized for Power Management Applications
for Portable Products, such as wireless charger,
Media Tablets, PM
P
,
D
SC, GPS, and Others
Order Information
Marking
Product
Package
Packing
3000PCS/Reel
Min Unit Quantity
PTS4614
PTS4614
SOP8
3000PCS
Absolute Maximum Ratings
Symbol
Rating
NMOS PMOS
Parameter
Unit
Common Ratings (T =25°C Unless Otherwise Noted)
C
V
GS
Gate-Source Voltage
±20
40
±20
-40
V
V
Drain-Source Breakdown Voltage
Maximum Junction
T
e
m
perature
Storage
T
e
m
perature Range
Diode Continuous Forward Current
V
(BR)DSS
T
J
175
-50 to 150
°C
°C
A
T
STG
I
S
①
=25°C
T
C
8
-7
Mounted on Large Heat Sink
I
DM
②
=25°C
=25°C
=100°C
=25°C
T
C
T
C
T
C
T
C
32
8
-28
-7.5
-5
A
A
Pulse Drain Current
T
ested
I
D
Continuous Drain Current(V
GS
=10V)
5.5
P
D
Maximum Power Dissipation
2
W
R
JA
Thermal Resistance Junction-Ambient
62.5
°C/W
Copyright
Puolop Electronics Co., Ltd
Rev. Rev
Page 1 ,Total 8
B– Jun.30
th
, 2015
PTS4614
40V/7A N+P Channel Advanced Power MOSFET
N-Channel
Symbol Parameter
Condition
Min
Typ
Max
Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Drain-Source Breakdown Voltage
V
GS
=0V I
D
=250μA
V
DS
=40
V
,
V
GS
=0V
40
—
—
—
—
1
V
V
(BR)DSS
Zero Gate Voltage Drain Current
(
T
c
=25
℃
)
μA
I
DSS
Zero Gate Voltage Drain Current
(
T
c
=125
℃
)
V
DS
=40
V
,
V
GS
=0V
—
—
100
μA
Gate-Body Leakage Current
Gate Threshold Voltage
V
GS
=±20
V
,
V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=7A
—
1.0
—
—
±100
3.0
nA
V
I
GSS
2.0
14
V
GS(TH)
R
DS(ON)
R
DS(ON)
Drain-Source On-State Resistance
20
mΩ
Drain-Source On-State Resistance
V
GS
=5V, I
D
=3.5A
—
18
30
mΩ
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
450
105
10
C
iss
C
oss
C
rss
Q
g
V
DS
=20
V
,
V
GS
=0
V
,
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
12.5
3.3
V
DS
=20
V
,
I
D
=4A,
V
GS
=4.5V
GateSource Charge
GateDrain Charge
Q
gs
Q
gd
3.2
Switching Characteristics
5
Turnon Delay Time
—
—
–
—
—
—
—
ns
ns
ns
ns
t
d(on)
V
DD
=20V,
I
D
=3A,
3.2
15
Turnon Rise Time
t
r
R
G
=3.3Ω,
V
GS
=10V
TurnOff Delay Time
t
d(off)
2.1
TurnOff Fall Time
—
t
f
Source Drain Diode Characteristics
①
.2.5
—
—
—
A
V
Sourcedrain current(Body Diode)
T
c
=25
℃
I
SD
T
j
=25
℃
,I
SD
=4A,
Forward on voltage
0.82
1.2
V
SD
V
GS
=0V
Notes:
①
Pulse test ; Pulse width
300
s, duty cycle
2%.
②
Pulse width limited by maximum allowable
junction temperature
Copyright
Puolop Electronics Co., Ltd
Rev. Rev
Page 2 ,Total 8
B– Jun.30
th
, 2015
PTS4614
40V/7A N+P Channel Advanced Power MOSFET
P-Channel
Symbol
Parameter
Condition
Min
Typ
Max
Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Drain-Source Breakdown Voltage
V
GS
=0V I
D
=-250μA
V
DS
=-40V,V
GS
=0V
-40
—
—
—
—
1
V
V
(BR)DSS
Zero Gate Voltage Drain Current
(
T
c
=25
℃
)
μA
I
DSS
Zero Gate Voltage Drain Current
(
T
c
=125
℃
)
V
DS
=-40V,V
GS
=0V
—
—
—
100
μA
Gate-Body Leakage Current
Gate Threshold Voltage
V
GS
=±20
V
,
V
DS
=0V
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10
V
,
I
D
=-7A
—
-1.0
—
±100
-3.0
35
nA
V
I
GSS
-2.0
V
GS(TH)
R
DS(ON)
R
DS(ON)
Drain-Source On-State Resistance
28
33
mΩ
Drain-Source On-State Resistance
V
GS
=-5
V
,
I
D
=-3A
—
45
mΩ
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Input Capacitance
—
—
—
—
—
—
550
110
55
13
4
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
C
iss
C
oss
C
rss
Q
g
V
DS
=-20V,V
GS
=0V,
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
V
DS
=-20V,I
D
=-3A,
V
GS
=-4.5V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
3
Switching Characteristics
8
5
Turn-on Delay Time
—
—
—
—
—
—
—
—
ns
nS
nS
nS
t
d(on)
V
DD
=-20
V
,
I
D
=-6A,
Turn-on Rise Time
t
r
R
G
=3.3Ω,
V
GS
=-4.5V
22
8.5
Turn-Off Delay Time
t
d(off)
Turn-Off Fall Time
t
f
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
-3
—
—
A
V
T
c
=25
℃
I
SD
T
j
=25
℃
,I
SD
=-4A
Forward on voltage
-0.83
-1.2
V
SD
V
GS
=0V
Notes:
①
Pulse test ; Pulse width
300
s, duty cycle
2%.
②
Pulse width limited by maximum allowable
junction temperature.
Copyright
Puolop Electronics Co., Ltd
Rev. Rev
Page 3 ,Total 8
B– Jun.30
th
, 2015
PTS4614
40V/7A N+P Channel Advanced Power MOSFET
N-Channel Typical Characteristics
V
DS
, Drain -Source Voltage (V)
Tj , Junction
T
e
m
perature (°C)
Fig2.
Power Dissipation
Fig1.
Typical Output Characteristics
V
GS
, Gate -Source Voltage (V)
Tj , Junction
T
e
m
perature (°C)
Fig3.
Typical Transfer Characteristics
Fig4.
Normalized On-Resistance Vs. Temperature
V
DS
, Drain -Source Voltage (V)
Square Wave Pulse Duration (sec)
Fig6. Thermal Transient Impedance
Fig5.
Maximum Safe Operating Area
Copyright
Puolop Electronics Co., Ltd
Rev. Rev
Page 4 ,Total 8
B– Jun.30
th
, 2015
PTS4614
40V/7A N+P Channel Advanced Power MOSFET
N-Channel Typical Characteristics
V
SD
, Source-Drain Voltage (V)
Qg ,
T
o
tal Gate Charge (nC)
Fig7.
Typical Source-Drain Diode Forward Voltage
Fig8.
Typical Gate Charge Vs.Gate-Source Voltage
Tj , Junction
T
e
m
perature (°C)
V
DS
, Drain-Source Voltage (V)
Fig10.
Typical Capacitance Vs.Drain-Source Voltage
Fig9.
Threshold Voltage Vs. Temperature
Fig11.
Switching Time Test Circuit and waveforms
Copyright
Puolop Electronics Co., Ltd
Rev. Rev
Page 5 ,Total 8
B– Jun.30
th
, 2015
PTS4614
40V/7A N+P Channel Advanced Power MOSFET
P-Channel Typical
Characteristics
-V
DS
, -Drain -Source Voltage (V)
Tj , Junction
T
e
m
perature (°C)
Fig2.
Power Dissipation
Fig1.
Typical Output Characteristics
-V
GS
, -Gate -Source Voltage (V)
Tj , Junction
T
e
m
perature (°C)
Fig3.
Typical Transfer Characteristics
Fig4.
Normalized On-Resistance Vs. Temperature
-V
DS
, -Drain -Source Voltage (V)
Square Wave Pulse Duration (sec)
Fig6. Thermal Transient Impedance
Fig5.
Maximum Safe Operating Area
Copyright
Puolop Electronics Co., Ltd
Rev. Rev
Page 6 ,Total 8
B– Jun.30
th
, 2015
PTS4614
40V/7A N+P Channel Advanced Power MOSFET
P-Channel Typical Characteristics
-V
SD
, -Source-Drain Voltage (V)
Qg –
T
o
tal Gate Charge (nC)
Fig7.
Typical Source-Drain Diode Forward Voltage
Fig8.
Typical Gate Charge Vs.Gate-Source Voltage
Tj , Junction
T
e
m
perature (°C)
-V
DS
, -Drain-Source Voltage (V)
Fig10.
Typical Capacitance Vs.Drain-Source Voltage
Fig9.
Threshold Voltage Vs. Temperature
Fig11.
Switching Time Test Circuit and waveforms
Copyright
Puolop Electronics Co., Ltd
Rev. Rev
Page 7 ,Total 8
B– Jun.30
th
, 2015
PTS4614
40V/7A N+P Channel Advanced Power MOSFET
Package Out Line Dimensions
Reflow soldering footprint for SOP8
Customer Service
TEL:
(86-755) -26902410
FAX:
(86-755) -26907027
Copyright
Puolop Electronics Co., Ltd
Rev. Rev
Page 8 ,Total 8
B– Jun.30
th
, 2015
