PUOLOP-PTY10HN08
| Part # | PUOLOP-PTY10HN08 |
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PTF10HN08/PTY10HN08
80V/100A N-Chnnel MOSFET
Features
D
z
80V/100A
RDS(ON)=6.5m
(typ.
)
@
V
GS=10V
ඔ
G
G
z
z
Lead free and Green Device Available
Low Rds-on to Minimize Conductive Loss
S
z
High avalanche Current
D
%
100 Avalanche
Tested
Application
G
S
G D S
Power Supply
DC-DC Converters
UPS
TO-220F
TO-263
Battery Manageme
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Symbol
V
DSS
Parameter
Maximum
Unit
V
V
Drain-to-Source Voltag
Gate-to-Source
80
±25
100
V
GSS
T
C
=25°C
T
C
=100°C
I
D
3
Continuous Drain Current
A
70
4
I
DM
EAS
5
Pulsed Drain
Current
Avalanche energy
A
400
313
200
mJ
W
PD
Maximum Power Dissipation
T
C
=25°C
T
J,
T
STG
Junction & Storage Temperature Range
-55~175
°C
Thermal Characteristics
Symbol
Parameter
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Typical
0.63
Unit
R
ș
jc
R
ș
ja
Я
/W
62.5
–
1
–
2018-6-12
PTF10HN08/PTY10HN08
80V/100A N-Chnnel MOSFET
Electrical Characteristics
(TA=25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ Max.
Unit
Static Characteristics
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
V
GS
=0V,I
D
=250uA
V
DS
=80V,V
GS
=0V
V
DS
=V
GS
,I
D
=250uA
80
—
2
—
—
3
—
1
V
uA
V
V
GS(th)
I
GSS
4
Gate Leakage Current
V
GS
=±25V, V
DS
=0V
V
GS
=10V, I
D
=50A
—
—
—
—
6.5
—
±100
8.5
—
nA
1
R
DS(on)
Drain-Source On-Resistance
m
Diode Characteristics
1
V
SD
Diode Forward Voltage
I
SD
=50A,V
GS
=0V
—
1.3
V
0.9
I
S
3
t
rr
Q
rr
Diode Continuous Forward Current
Reverse Recovery Time
—
—
—
—
45
65
97
—
—
A
nS
nC
I
S
=50A,
dI/dt=100A/us
Reverse Recovery Charge
Dynamic Characteristics
2
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
3175
440
268
49
64
139
48
—
—
—
—
—
—
—
V
GS
=0V,V
DS
=50V
Frequency=1MHz
pF
nS
V
DS
=40V,I
D
=50A,
V
GS
=10V,(Note1,4)
Turn-Off Delay Time
Fall Time
t
f
Gate Charge Characteristics
2
—
Q
g
Q
gs
Q
gd
Total Gate Charge
—
76
V
DS
=64V,I
D
=50A,
V
GS
=10V,(Note1,4)
nC
Gate-to-Source Charge
Gate-to-Drain Charge
—
—
21
24
—
—
Note: 1: Pulse test; pulse width
ʀ
300us, duty cycle
ʀ
2%.
2: Guaranteed by design, not subject to production testing.
3: Package limitation current is 100A.Calculated continuous current based on maximum allowable junction temperature.
4: Repetitive rating, pulse width limited by max junction temperature.
5: Starting TJ = 25°C,L = 1mH,I
A
S =
2
5A.
–
2
–
2018-6-12
PTF10HN08/PTY10HN08
80V/100A N-Chnnel MOSFET
Typical Characteristics
400
V
GS
To
p
:
1
5
V
10V
8V
7V
6V
5. 5 V
5V
100
10
1
300
200
100
0
Bottom: 4.
5
V
175
o
C
25
o
C
*
Note
s
:
1.
V
DS
=
2
0V
*
Notes :
1.
300us PulseTest
2.
300us Puls
e
T
est
2.
T = 25
o
C
C
0.1
0
2
4
6
8
10
0
1
2
3
4
5
V
GS
, Gate-Source Voltage [V]
V
DS
, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
9.0
8.5
V
G
S
=
1
0V
100
10
8.0
7.5
7.0
6.5
6.0
5.5
175
o
C 25
o
C
1
*
Notes :
1.
V
GS
= 0V
u
Note
:
T =2
5
o
C
2.
300us Puls
e
T
est
J
0.1
0.0
0
50
100
150
200
250
0.4
0.8
1.2
1.6
2.0
V
SD
, Source-Drain Voltage [V]
I
D
, Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
5000
4000
3000
2000
1000
C
is
s
=
C
g
s
+
C
g
d
(C
d
s
= shorted)
C
oss
= C
ds
+C
gd
C
rss
= C
gd
C
iss
8
6
4
2
0
*
Not
e
;
1.
V
GS
=
0V
2.
f
=1
M
Hz
C
oss
V
DS
= 64V
I
D
= 30V
C
rss
0
0
20
40
60
80
0
5
10
15
20
25
30
35
40
Q
G
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
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2018-6-12
PTF10HN08/PTY10HN08
80V/100A N-Chnnel MOSFET
Typical Characteristics
(continued)
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
0.9
u
Not
e
:
1.
V
G
S
=10 V
u
Not
e
:
1. V
GS
= 0 V
2.
I
D
=40 A
2. I
D
= 250
P
A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T,
J
unctionTemperature[
o
C]
T , Junction Temperature [
o
C]
J
J
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
100
80
60
40
20
0
Operation in
This Area
is Limited by R
DS(on)
10
3
10
2
10
1
10
0
100
P
s
1
m
s
10ms
DC
*Notes:
1.T =25
o
C
-1
C
10
2.T =175
o
C
J
3.SinglePulse
10
-2
10
25
50
75
100
125
150
175
-1
0
10
10
1
10
2
T , Case Temperature [
o
C]
C
V
DS
,Drain-SourceVoltage[V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
10
0
D=0.5
0.2
* Notes :
1.
Z
J
(
C
t) = 0.75
o
C/W Max.
2.
Duty Factor
,
D
=t
1
/t
2
3.
T
JM
– T
C
= P
DM
* Z
ꢀ
JC
(t)
ꢀ
-1
10
0.1
0.05
P
DM
0.02
0.01
single pulse
10
-3
t
1
t
2
10
-2
10
-5
10
0
10
1
10
-4
10
-2
10
-1
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
–
4
–
2018-6-12
PTF10HN08/PTY10HN08
80V/100A N-Chnnel MOSFET
Test Circuit
1) E
AS
test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
– 5 –
2018-6-12
