PUOLOP-PTY12HN06
| Part # | PUOLOP-PTY12HN06 |
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PTP12HN06/PTY12HN06
60V/
6
1
5
2
A
0
A
N
–
N
C
–
h
C
n
h
n
n
e
n
l
e
M
l
O
M
S
O
F
S
E
F
T
ET
Features
60V/120A
D
RDS(ON)=4.2m
Ω
(typ.)
@ VGS=10V
Lead free and Green Device Available
Low Rds-on to Minimize Conductive Loss
High avalanche Current
◀
G
S
%
100 Avalanche
Tested
D
Application
Power Supply
G
S
DC-DC Converters
UPS
TO-220
TO-263
Battery Management System
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Symbol
V
DSS
Parameter
Maximum
Unit
V
V
Drain-to-Source Voltage
Gate-to-Source Voltage
60
±25
V
GSS
T
C
=25°C
120
I
D
3
Continuous Drain Current
T
C
=100°C
T
C
=25°C
80
480
A
4
Pulsed Drain Current
Avalanche energy
I
DP
EAS
5
PD
684
188
mJ
T
C
=25°C
Maximum Power Dissipation
W
-55~175
°C
T
J,
T
STG
Junction & Storage Temperature Range
Thermal Characteristics
Symbol
Parameter
Typical
0.67
Unit
R
θ
jc
Thermal Resistance-Junction to Case
℃
/W
R
θ
ja
Thermal Resistance-Junction to Ambient
62.5
– 1 –
2018-6-12
PTP12HN06/PTY12HN06
60V/
6
1
5
2
A
0
A
N
–
N
C
–
h
C
n
h
n
n
e
n
l
e
M
l
O
M
S
O
F
S
E
F
T
ET
Electrical Characteristics
(TA=
25°C unles
s otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
V
GS
=0V,I
D
=250uA
V
DS
=60V,V
GS
=0V
V
DS
=V
GS
,I
D
=250uA
60
—
2
—
—
3
—
1
V
uA
V
I
DSS
V
GS(th)
I
GSS
4
Gate Leakage Current
V
GS
=±25V, V
DS
=0V
V
GS
=10V, I
D
=60A
—
—
—
—
4.2
—
±100
5.6
—
nA
1
R
DS(on)
Drain-Source On-Resistance
m
Ω
Diode Characteristics
1
V
SD
Diode Forward Voltage
I
SD
=60A,V
GS
=0V
—
—
—
—
0.8
—
32
60
1.3
60
—
V
A
nS
nC
I
S
3
t
rr
Diode Continuous Forward Current
Reverse Recovery Time
I
F
=60A,dI/dt=100A/u
s
Q
rr
Reverse Recovery Charge
—
Dynamic Characteristics
2
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
3130
521
304
21
56
53
—
—
—
—
—
—
—
V
GS
=0V, V
DS
30 V
Frequency=1MHz
pF
nS
V
DD
=30
V
,
I
D
=60A,
Turn-Off Delay Time
Fall Time
V
GS
=10
V
,
R
G
=5
Ω
t
f
27
Gate Charge Characteristics
2
—
Q
g
Q
gs
Q
gd
Total Gate Charge
—
76
V
DS
=48
V
,
V
GS
=10V
I
D
=60A
nC
Gate-to-Source Charge
Gate-to-Drain Charge
—
—
18
31
—
—
Note: 1: Pulse test; pulse width
≦
300us, duty cycle
≦
2%.
2: Guaranteed by design, not subject to production testing.
3: Package limitation current is 60A.Calculated continuous current based on maximum allowable junction temperature.
4: Repetitive rating, pulse width limited by max junction temperature.
5: Starting TJ = 25°C,L = 0.5mH,IAS = 37A.
– 2 –
2018-6-12
PTP12HN06/PTY12HN06
60V/
6
1
5
2
A
0
A
N
–
N
C
–
h
C
n
h
n
n
e
n
l
e
M
l
O
M
S
O
F
S
E
F
T
ET
Typical Characteristics
400
400
320
240
160
80
10V
V
DS
=5V
7.0V
320
240
160
80
6.0V
5.5V
150°C
V
GS
=5.0V
25°C
0
0
0
1
2
3
4
5
2
3
4
5
6
7
8
V
DS
(V)
V
GS
(V)
Fig 2: Transfer Characteristics
Fig 1: Output Characteristics
20
18
16
14
12
10
8
7
6
5
4
3
2
I
D
=
6
0A
V
GS
=10V
25°C
6
4
2
0
5
6
7
8
9
10
0
60
120
180
240
300
V
GS
(V)
I
D
(A)
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
10000
1000
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
GS
=10V
I
D
=
60A
Ciss
Coss
Crss
V
GS
=0V
f=1MHz
10
0
10
20
30
40
50
60
-50
-25
0
25
50
75
100
125
150
Tj – Junction Temperature (
°
C)
V
DS
(V)
Fig 6: Capacitance Characteristics
Fig 5: Rds(on) vs. Temperature
– 3 –
2018-6-12
PTP12HN06/PTY12HN06
60V/
6
1
5
2
A
0
A
N
–
N
C
–
h
C
n
h
n
n
e
n
l
e
M
l
O
M
S
O
F
S
E
F
T
ET
1000
100
10
10
8
V
DS
=30V
I
D
=40A
6
4
2
0
25
˚C
150
˚C
1
0
0.2
0.4
0.6
0.8
1
1.2
0
10
20
30
40
50
60
70
80
V
SD
– Diode Forward Voltage(V)
Qg (nC)
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
120
100
80
200
175
150
125
100
75
60
40
V
GS
≥10V
50
20
0
25
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
Tc – Case Temperature (
°
C
)
Tc – Case Temperature (
°
C
)
Fig 10: Drain Current Derating
Fig 9: Power Dissipation
1000
1us
10us
Limited by
Rds(on)
100
10
1
100us
1ms
10ms
DC
Single pulse
Tc=25
˚C
0.1
0.1
1
10
100
V
DS
(V)
Fig 11: Safe Operating Area
– 4 –
2018-6-12
PTP12HN06/PTY12HN06
60V/
6
1
5
2
A
0
A
N
–
N
C
–
h
C
n
h
n
n
e
n
l
e
M
l
O
M
S
O
F
S
E
F
T
ET
Fig 12: Max. Transient Thermal Impedance
1
D=0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.01
Single pulse
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
0.001
1E-05
0.0001
0.001
0.01
0.1
1
t
p
(sec)
– 5 –
2018-6-12
PTP12HN06/PTY12HN06
60V/
6
1
5
2
A
0
A
N
–
N
C
–
h
C
n
h
n
n
e
n
l
e
M
l
O
M
S
O
F
S
E
F
T
ET
Test Circuit
1) E
AS
test Circuit
2) Gate charge test Circuit
3) Switch Time Test Circuit
– 6 –
2018-6-12
