PUOLOP-PTY80N06

PTP80N60/PTY80N60  

60V/80A N-Chnnel MOSFET  

Features  

D



60V/80A  

RDS(ON)=7.3m

Ÿ

@ VGS=10V  

Lead free and Green Device Available  

Low Rds-on to Minimize Conductive Loss  

High avalanche Current  

◀

G









S

%

100 Avalanche

 

Tested  

D

Application  

G

S









Power Supply  

TO-220  

TO-263  

DC-DC Converters  

UPS  

Battery Management System  

Absolute Maximum Ratings

(T

A

=25°C unless otherwise noted)  

Symbol  

V

DSS  

Parameter  

Maximum  

Unit  

V

V

Drain-to-Source Voltage  

Gate-to-Source Voltage  

60  

±25  

V

GSS  

T

C

=25°C  

80  

I

D

3  

Continuous Drain Current  

T

C

=100°C  

T

C

=25°C  

66  

320  

A

4

Pulsed Drain Current  

Avalanche energy  

I

DP  

EAS

5  

PD  

242  

125  

mJ  

T

C

=25°C  

Maximum Power Dissipation  

W

-55~175  

°C  

T

J,

T

STG  

Junction & Storage Temperature Range  

Thermal Characteristics  

Symbol  

Parameter  

Typical  

1.0  

Unit  

R

θ

 

Thermal Resistance-Junction to Case  

jc  

℃

/W  

R

θ

ja  

Thermal Resistance-Junction to Ambient  

62.5  

– 1 –  

2018-6-12  

PTP80N60/PTY80N60  

60V/80A N-Chnnel MOSFET  

Electrical Characteristics

(TA=25°C unless otherwise noted)  

Symbol  

Parameter  

Test Conditions

 

Min.  

Typ  

Max. Unit  

Static Characteristics  

BV

DSS  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate Threshold Voltage  

V

GS

=0

V

,

I

D

=250uA  

V

DS

=60

V

,

V

GS

=0V  

60  

—

2

—

—

3

—

1

V

uA  

V

I

DSS  

V

GS(th)  

I

GSS  

V

DS

=V

GS

,I

D

=250uA  

V

GS

=±25

V

, V

DS

=0V  

V

GS

=10

V

,

I

D

=40A  

4

Gate Leakage Current  

—

—

±100  

nA  

—

—

7.3  

—

8

—

1

R

DS(on)  

Drain-Source On-Resistance  

m

Ω  

Diode Characteristics  

1

V

SD  

I

S  

t

rr  

Diode Forward Voltage  

Diode Continuous Forward Current  

Reverse Recovery Time  

I

SD

=40A,

GS

=0V  

—

—

—

—

—

—

70  

1.3  

100  

—

V

A

nS  

nC  

3

I

S

=40A,  

dI/dt=100A/us  

Q

rr  

Reverse Recovery Charge  

100  

—

Dynamic Characteristics

2  

C

iss  

C

oss  

C

rss  

t

d(on)  

t

r  

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-On Delay Time  

Rise Time  

—

—

—

—

—

—

—

3970  

365  

257  

57  

63  

139  

50  

—

—

—

—

—

—

—

V

GS

=0

V

,

V

DS

=25V  

Frequency=1MHz  

pF  

nS  

V

DD

=34

V

,

I

D

=40A,  

V

GS

=10

V

,

(Note1,4)  

t

d(off)  

t

f  

Turn-Off Delay Time  

Fall Time  

Gate Charge Characteristics

2  

—

Q

g  

T

o

tal Gate Charge  

—

91  

V

DD

=48

V

,

I

D

=40A,  

V

GS

=10

V

,

(Note1,4)  

nC  

—

—

Q

gs  

Q

gd  

Gate-to-Source Charge  

Gate-to-Drain Charge  

—

—

19  

30  

Note: 1: Pulse test; pulse width

≦

300us, duty cycle

≦

2%.  

2: Guaranteed by design, not subject to production testing.  

3: Package limitation current is 100A.Calculated continuous current based on maximum allowable junction temperature.  

4: Repetitive rating, pulse width limited by max junction temperature.  

5: Starting TJ = 25°C,L = 1mH,IAS = 22A.  

– 2 –  

2018-6-12  

PTP80N60/PTY80N60  

60V/80A N-Chnnel MOSFET  

Typical Operating Characteristics  

Vds Drain-Source Voltage (V)  

T

J

-Junction

T

e

mperature(

℃

)  

Figure 1 Output Characteristics  

Figure 4 Rdson-JunctionTemperature  

Vgs Gate-Source Voltage (V)  

Qg Gate Charge (nC)  

Figure 2 Transfer Characteristics  

Figure 5 Gate Charge  

I

D

– Drain Current (A)  

Vsd Source-Drain Voltage (V)  

Figure 3 Rdson-

Drain Current  

Figure 6 Source- Drain Diode Forward  

– 3 –  

2018-6-12  

PTP80N60/PTY80N60  

60V/80A N-Chnnel MOSFET  

Test Circuit  

1) E

AS

test Circuit  

2) Gate charge test Circuit  

3) Switch Time Test Circuit  

– 4 –  

2018-6-12