PUOLOP-S8050

S8050  

TRANSISTOR(NPN)  

SOT-23  

FEATURES  

z

Complementary to S8550  

1. BASE  

z

Collector Current: I

C

=0.5A  

2. EMITTER  

3. COLLECTOR  

MARKING: J3Y  

MAXIMUM RATINGS (T

A

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Value  

40  

Units  

V

V

CBO  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

V

CEO  

V

EBO  

I

C  

25  

V

5

V

Collector Current -Continuous  

Collector Dissipation  

0.5  

A

P

C  

0.3  

W

℃

℃

T

j  

Junction

T

e

mperature  

Storage

T

e

mperature  

150  

-55-150  

T

stg  

ELECTRICAL CHARACTERISTICS (Tamb=25

℃

unless otherwise specified)  

Parameter  

Symbol  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Test  

conditions  

MIN  

40  

25  

5

TYP  

MAX  

UNIT  

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

I

C

= 100

μ

A, I

E

=0  

I

C

=1mA, I

B

=0  

V

V

I

E

=100

μ

A, I

C

=0  

V

CB

=40 V ,

 

I

E

=0  

V

EB

= 5V ,

 

I

C

=0  

V

CE

=1

V

,

I

C

= 50mA  

V

CE

=1

V

,

I

C

= 500mA  

I

C

=500 mA, I

B

= 50mA  

I

C

=500 mA, I

B

= 50mA  

0.1  

0.1  

μ

A  

μ

A  

Emitter cut-off current  

I

EBO  

H

FE(1)  

120  

50  

350  

DC current gain  

H

FE(2)  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

V

CE

(sat)  

V

BE

(sat)  

0.6  

1.2  

V

V

V

Transition frequency  

f

T  

150  

MHz  

f=

30MHz  

CLASSIFICATION OF

 

h

FE(1)  

Rank  

L

H

120-200  

200-350  

Range  

– 1 –  

Date:2011/05  

S8050  

– 2 –  

Date:2011/05