Qorvo-NBB-400-T1
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NBB-400
NBB-400
Cascadable Broadband GaAs MMIC Amplifier
DC to 8GHz
The NBB-400 cascadable broadband InGaP/GaAs MMIC amplifier is a
low-cost, high-performance solution for general purpose RF and
microwave amplification needs. This 50
Ω
gain block is based on a
reliable HBT proprietary MMIC design, providing unsurpassed
performance for small-signal applications. Designed with an external
bias resistor, the NBB-400 provides flexibility and stability. The NBB-
400 is packaged in a low cost, surface-mount ceramic package,
providing ease of assembly for high-volume tape-and-reel
Package: Micro-X, 4-pin, Ceramic
Features
■
Reliable, Low-Cost HBT Design
■
15.5dB Gain, +15.0dBm P1dB at
2Ghz
■
High P1dB of +14.6dBm at
6.0GHz
requirements. It is available in either packaged or chip (NBB-400-D)
form, where its gold metallization is ideal for hybrid circuit designs.
■
■
Single Power Supply Operation
50
Ω
I/O Matched for High
Frequency Use
Applications
■
Narrow and Broadband
Commercial and Military Radio
Designs
■
■
Linear and Saturated Amplifiers
Gain Stage or Driver Amplifiers
for MWRadio/Optical Designs
(PTP/PMP/LMDS/UNII/VSAT/
WLAN/Cellular/DWDM)
Functional Block Diagram
Ordering Information
NBB-400
Cascadable Broadband GaAs MMIC Amplifier DC to 8GHz
NBB-400-T1
NBB-400-D
NBB-400-E
NBB-X-K1
Tape & Reel, 1000 Pieces
NBB-400 Chip Form (100 pieces minimum order)
Fully Assembled Evaluation Board
Extended Frequency InGaP Amp Designer’s Tool Kit
RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC
27409-9421
DS131004
RF MICRO DEVICES
®
and RFMD
®
are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD.
All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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NBB-400
Absolute Maximum Ratings
Caution!
ESD sensitive device.
Parameter
Rating
+20
Unit
dBm
mW
mA
°C
RF Input Power
Power Dissipation
Device Current
300
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21, <1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony solder.
70
Channel Temperature
Operating Temperature
Storage Temperature
150
-45 to +85
-65 to +150
°C
°C
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Exceeding any one or a combination of these limits may cause permanent damage
.
Nominal Operating Parameters
Specification
Parameter
Unit Condition
Min
Typ
Max
General Performance
V
D
= +3.9V, I
CC
= 47mA, Z
0
= 50
Ω
, T
A
= +25°C
f = 0.1GHz to 1.0GHz
f = 1.0GHz to 4.0GHz
Small Signal Power Gain, S21
15.5
16.7
16.5
dB
dB
dB
dB
dB
16.0
f = 4.0GHz to 6.0GHz
f = 6.0GHz to 8.0GHz
f = 0.1GHz to 5.0GHz
f = 0.1GHz to 4.0GHz
f = 4.0GHz to 6.0GHz
f = 6.0GHz to 12.0GHz
BW3 (3dB)
12.5
13.5
Gain Flatness, GF
±0.8
Input and Output VSWR
1.45:1
1.30:1
1.90:1
7.5
Bandwidth, BW
GHz
dBm
Output Power at -1dB
Compression, P1dB
13.0
f = 2.0GHz
14.6
13.5
4.3
dBm
dBm
dB
f = 6.0GHz
f = 9.0GHz
Noise Figure, NF
f = 3.0GHz
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
D
+28.1
-17.5
3.9
dBm
dB
f = 2.0GHz
f = 0.1GHz to 12.0GHz
3.6
4.2
V
-0.0015
Gain Temperature Coefficient,
dB/°C
ꢀꢁ
ꢂ
/
ꢀꢃ
RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC
27409-9421
DS131004
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, I
n
c. (“RFMD”) for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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NBB-400
Specification
Typ
Parameter
Unit Condition
Min
Max
MTTF versus Temperature
at I
CC
= 50mA
Case Temperature
Junction Temperature
MTTF
85
131
°C
°C
>1,000,000
hours
Thermal Resistance
θ
JC
ꢄ
ꢂ
ꢅ ꢆ
ꢇꢈꢉꢊ
ꢋ
ꢌ
ꢍ ꢎ
ꢇꢇ
251
°C/W
ꢏ ꢐ
ꢑ
ꢇ
ꢒꢓꢔꢕꢖꢗꢘꢘꢙ
RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC
27409-9421
DS131004
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, I
n
c. (“RFMD”) for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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NBB-400
Pin Names and Descriptions
Pin
Name
Description
Interface Schematic
1
RFIN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used
in most applications. DC coupling of the input is not allowed,
because this will override the internal feedback loop and cause
temperature instability.
2
3
GND
Ground connection. For best performance, keep traces physically
short and connect immediately to ground plane.
RFOUT
RF output and bias pin. Biasing is accomplished with an external
series resistor and choke inductor to V
CC
. The resistor is selected
to set the DC current into this pin to a desired level. The resistor
value is determined by the following equation:
ꢒ
ꢋ
ꢛꢛ
ꢅ
ꢋ
ꢜꢝꢞꢟꢛꢝ
ꢎ
ꢛꢛ
ꢙ
ꢚ ꢏ
Care should also be taken in the resistor selection to ensure that
the current into the part never exceeds maximum datasheet
operating current over the planned operating temperature. This
means that a resistor between the supply and this pin is always
required, even if a supply near 5.0V is available, to provide DC
feedback to prevent thermal runaway. Because DC is present on
this pin, a DC blocking capacitor, suitable for the frequency of
operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
4
GND
Same as pin 2.
Package Drawing
RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC
27409-9421
DS131004
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, I
n
c. (“RFMD”) for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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NBB-400
Typical Bias Configuration
NOTE: Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
Recommended Bias Resistor Values
Supply Voltage, V
CC
(V)
5
8
10
12
15
20
Bias Resistor, R
CC
(
Ω
)
22
81
122
162
222
322
Chip Outline Drawing – NBB-400-D
(Chip Dimensions: 0.017” x 0.017” x 0.004”)
RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC
27409-9421
DS131004
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, I
n
c. (“RFMD”) for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
5 of 11
NBB-400
Sales Criteria
–
Unpackaged Die
Die Sales Information
All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die material shall be negotiated
on a case-by-case basis.
Segmented die are selected for customer shipment in accordance with RFMD Document #6000152 – Die Product Final
Visual Inspection Criteria
1
.
Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 400 die per carrier is allowable.
Die Packaging
All die are packaged in GelPak ESD protective containers with the following specification: O.D. = 2″X2″, Capacity = 400
Die (20X20 segments), Retention Level = High(X0).
GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is opened the
GelPak/s should be stored in a controlled nitrogen environment. Do not press on the cover of a closed GelPak, handle by
the edges only. Do not vacuum seal bags containing GelPak containers.
Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit
2
.
Package Storage
Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability.
Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit
2
.
Die Handling
Proper ESD precautions must be taken when handling die material.
Die should be handled using vacuum pick-up equipment, or handled along the long side with a sharp pair of tweezers. Do
not touch die with any part of the body.
When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive force
may damage GaAs devices.
Die Attach
The die attach process mechanically attaches the die to the circuit substrate. In addition, the utilization of proper die
attach processes electrically connect the ground to the trace on which the chip is mounted. It also establishes the thermal
path by which heat can leave the chip.
Die should be mounted to a clean, flat surface. Epoxy or eutectic die attach are both acceptable attachment methods. Top
and bottom metallization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of
epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate.
All connections should be made on the topside of the die. It is essential to performance that the backside be well
grounded and that the length of topside interconnects be minimized.
Some die utilize vias for effective grounding. Care must be exercised when mounting die to preclude excess run-out on
the topside.
Die Wire Bonding
Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable
practices for wire bonding.
All bond wires should be made as short as possible.
Notes
1
RFMD Document #6000152 – Die Product Final Visual Inspection Criteria. This document provides guidance for die inspection
personnel to determine final visual acceptance of die product prior to shipping to customers.
2
RFMD takes precautions to ensure that die product is shipped in accordance with quality standards established to minimize
material shift. However, due to the physical size of die-level product, RFMD does not guarantee that material will not shift during
transit, especially under extreme handling circumstances. Product replacement due to material shift will be at the discretion
of RFMD.
RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC
27409-9421
DS131004
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, I
n
c. (“RFMD”) for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
6 of 11
NBB-400
Extended Frequency InGaP Amplifier Designer’s Tool Kit
(NBB-X-K1)
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB- series InGap HBT gain block amplifiers. Each tool
kit contains the following:
5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
2 Broadband Evaluation Boards and High Frequency SMA Connectors
Broadband Bias Instructions and Specification Summary Index for ease of operation
RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC
27409-9421
DS131004
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, I
n
c. (“RFMD”) for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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NBB-400
Tape and Reel Dimensions
(all dimensions in millimeters)
Carrier tape basic dimensions are based on EIA 481. The pocket is designed to hold the part for shipping and loading onto SMT
manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. The individual pocket
design can vary from vendor to vendor, but width and pitch will be consistent.
Carrier tape is wound or placed onto a shipping reel 178 mm (7 inches) in diameter. The center hub design is large enough to
ensure the radius formed by the carrier tape around it does not put unnecessary stress on the parts.
Prior to shipping, moisture sensitive parts (MSL Level 2a-5a) are baked and placed into the pockets of the carrier tape. A cover
tape is sealed over the top of the entire length of the carrier tape. The reel is sealed in a moisture barrier ESD bag with the
appropriate units of desiccant and a humidity indicator card, which is placed in a cardboard shipping box. It is important to
note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. If the reels exceed the exposure
limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125°C. If baking is required,
devices may be baked according to section 4, table 4-1, column 8 of Joint Industry Standard IPC/JEDEC J-STD-033.
Table 1 provides useful information for carrier tape and reels used for shipping the devices described in this document.
Table 1. Tape and Reel
RFMD Part
Number
NBB-400
Reel Diameter
Inch (mm)
7 (178)
Hub Diameter
Inch (mm)
2.4 (61)
Pocket Pitch
Width (mm)
Feed
Units per Reel
(mm)
8
12
Single
1000
Figure 1. Carrier Tape Drawing with Part Orientation
Notes:
1. Unless
otherwise specified, all dimension tolerances per EIA-481
2. 10
sprocket hole pitch cumulative tolerance ±.02.
RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC
27409-9421
DS131004
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, I
n
c. (“RFMD”) for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
8 of 11
NBB-400
Typical Performance
RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC
27409-9421
DS131004
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, I
n
c. (“RFMD”) for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
9 of 11
NBB-400
Typical Performance (continued)
Note: The s-parameter gain results shown above include device performance as well as evaluation board and connector loss
variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz = -0.06dB
5GHz to 9GHz = -0.22dB
10GHz to 14GHz = -0.50dB
15GHz to 20GHz = -1.08dB
RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC
27409-9421
DS131004
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, I
n
c. (“RFMD”) for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
10 of 11
NBB-400
RoHS Banned Material Content
RoHS Compliant:
Yes
0.019
0602
–
Package Total Weight in Grams (g):
Compliance Date Code:
Bill of Materials Revision:
Pb Free Category:
e3
Parts Per Million (PPM)
Bill of Materials
Pb
0
0
0
0
Cd
0
0
0
0
Hg
Cr VI
PBB
PBDE
Die
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Molding Compound
Lead Frame
Die Attach Epoxy
Wire
0
0
0
0
Solder Plating
This RoHS banned material content declaration was prepared solely on information, including analytical data, provided to RFMD
by its suppliers, and applies to the Bill of Materials (BOM) revision noted
RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC
27409-9421
DS131004
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, I
n
c. (“RFMD”) for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
11 of 11
