REASUNOS-RS30P65D
| Part # | REASUNOS-RS30P65D |
Download  | REASUNOS-RS30P65D |
RS30P65D
Lead Free Package and Finish
P
-Channel
Trench Power
MOSFET
General Description
The RS30P65D
uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as -5
V
. This device is suitable for use as a
wide variety of applications.
Features
●
V
DS
= -30V,ID =-65A
R
DS(ON)
< 9
mΩ @
V
GS
=-10V
R
DS(ON)
< 16
mΩ @
V
GS
=-5V
Schematic Diagram
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Application
●
●
●
DC-DC converter
Load switch
Power management
TO-252 top view
100% UIS TESTED!
100% ΔVds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
RS30P65D
RS30P65D
TO-252
Table 1.
Absolute Maximum Ratings (T
A
=25
℃
)
Symbol
Parameter
Value
-30
Unit
V
V
A
A
V
DS
Drain-Source Voltage (
V
GS=
0V
）
±
25
-65
V
GS
Gate-Source Voltage (
V
DS=
0V)
Drain Current-Continuous(T
c
=25
℃
)
Drain Current-Continuous(T
c
=100
℃
)
I
D
-45
(Note 1)
-260
A
I
DM (pluse)
Drain Current-Continuous@ Current-Pulsed
(Note 2)
E
AS
500
83
mJ
W
Avalanche energy
Maximum Power Dissipation(T
c
=25
℃
)
Maximum Power Dissipation(T
c
=100
℃
)
P
D
41
W
Operating Junction and Storage Temperature Range
-55
T
o
1
75
℃
T
J
,T
STG
Table 2.
Thermal Characteristic
Symbol
Parameter
Typ
Max
Unit
R
JC
Thermal Resistance,Junction-to-Case
—
1.8
℃
/W
Copyright Reasunos
REV:A5 Apr.2019
Page 1 of 6
RS30P65D
Table 3.
Electrical Characteristics (TA=25
℃
unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
On/Off States
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
V
GS
=0V I
D
=-
250μA
V
DS
=-30V,V
GS
=0V
V
GS
=±25V,V
DS
=0V
V
DS
=V
GS
,I
D
=-
250μA
V
DS
=-5V,I
D
=-10A
V
GS
=-10V, I
D
=-20A
V
GS
=-5V, I
D
=-15A
-30
V
μA
nA
V
-1
±100
-3
I
GSS
V
GS(th)
g
FS
-1
-1.8
28
Forward Transconductance
20
S
7.1
10
9
mΩ
mΩ
R
DS(ON)
Drain-Source On-State Resistance
16
Dynamic Characteristics
Input Capacitance
3570
435
pF
pF
pF
C
iss
C
oss
C
rss
V
DS
=-15V,V
GS
=0V,
f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
175
Switching Times
t
d(on)
Turn-on Delay Time
t
r
t
d(off)
t
f
16
14
50
22
58
9
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=-15V,I
D
=-1A,R
L
=15
Ω
V
GS
=-10V,R
G
=2.5
Ω
Q
g
Q
gs
Q
gd
V
GS
=-10V, V
DS
=-15V, I
D
=-10A
14
Source-Drain Diode Characteristics
I
SD
Source-Drain Current(Body Diode)
Forward on Voltage
-50
A
V
V
SD
V
GS
=0V,I
S
=-10A
-1.2
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 2.E
AS
condition: T
J
=25
℃
,V
DD
=30V,V
G
=-10V, R
G
=25
Ω
Copyright Reasunos
REV:A5 Apr.2019
Page 2 of 6
RS30P65D
Switch Time Test Circuit and Switching Waveforms
：
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Figure1. Power Dissipation
Figure2. Drain Current
T
J
-Junction Temperature(
℃
)
T
J
-Junction Temperature(
℃
)
Figure4. Transfer Characteristics
Figure3. Output Characteristics
-Vds Drain-Source Voltage (V)
-Vgs Gate-Source Voltage (V)
Copyright Reasunos
REV:A5 Apr.2019
Page 3 of 6
RS30P65D
Figure5. Capacitance
Figure6. R
DS(ON)
vs Junction Temperature
-VDS Drain-to-Source Voltage(V)
Figure7. Max BV
DSS
vs Junction Temperature
Figure8. V
GS(th)
vs Junction Temperature
Figure9. Gate Charge Waveforms
Figure10. Maximum Safe Operating Area
-Vds
（
Vlots
）
Qg(nC)
Copyright Reasunos
REV:A5 Apr.2019
Page 4 of 6
RS30P65D
Figure11. Normalized Maximum Transient Thermal Impedance
TO-252 Package Information
Copyright Reasunos
REV:A5 Apr.2019
Page 5 of 6
RS30P65D
Disclaimers:
Reasunos Semiconductor Technology CO.,LTD(Reasunos)reserves the right to make changes
without notice in order to improve reliability,function or design and to discontinue any product
or service without notice .Customers should obtain the latest relevant information before orders
and should verify that such information in current and complete.All products are sold subject to
Reasunos’s terms and conditions supplied at the time of order acknowledgement.
Reasunos Semiconductor Technology CO.,LTD warrants performance of its hardware products
to the speciffications at the time of sale.Testing,reliability and quality control are used to
the extene Reasunos deems necessary to support this warrantee. Except where agreed upon by contr-
actual agreement,testing of all parameters of each product is not necessarily performed.
Reasunos Semiconductor Technology CO.,LTD does not assume any liability arising from
the use of any product or circuit designs described herein.Customers are responsible for their
products and applications using Reasunos’s components.To minimize risk,customers must provide
adequate design and operating safeguards.
Reasunos Semiconductor Technology CO.,LTD does not warrant or convey any license eith-
er expressed or implied under its patent rights,nor the rights of others.Reproduction of inform-
ation in Reasunos’s data sheeets or data books is permissible only if reproduction is without
modification oralteration.Reproduction of this information with any alteration is an unfair and
deceptive business practice. Reasunos Semiconductor Technology CO.,LTD is not responsi-
ble or liable for such altered documentation.
Resale of Reasunos’s products with statements different from or beyond the parameters stated
by Reasunos
Semiconductor Technology CO.,LTD for that product or service voids all exp-
ress or implied warrantees for the associated Reasunos’s product or service and is unfair and
deceptive business practice. Reasunos Semiconductor Technology CO.,LTD is not responsi-
ble or liable for such statements.
Life Support Policy:
Reasunos Semiconductor Technology CO.,LTD’s Products are not authorized for use as cri-
tical components in life support devices or systems without the expressed written approval of
Reasunos Semiconductor Technology CO.,LTD.
As used herein:
1.Life support devices or systems are devices or systems which:
a.are intended for surgical implant into the human body,
b.support or sustain life,
c.whose failuer to when properly used in accordance with instructions for used provided
in the laeling,can be reasonably expected to result in significant injury to the user.
2.A critical component is any component of a life support device or system whose failure to
system whose failure to perform can be reasonably expected to cause the failure of the life
support device or system,or to affect its safety or effectiveness.
Copyright Reasunos
REV:A5 Apr.2019
Page 6 of 6
