REASUNOS-RS4N65MD
| Part # | REASUNOS-RS4N65MD |
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RS4N65MD
N Channe
l
M
OSFET
ID
R
DS
(ON)(Typ )
VDSS
4A
2Ω
650V
Applications:
• Switch Mode Power Supply(SMPS)
• Adapter & Charger
• AC-DC Switching Power Supply
Features:
• Fast switching speed
• 100% avalanche tested
• Improved dv/dt capability
Ordering Information
Part Number
Package
Marking
Packing
Qty.
RS4N65MD
T0-251
RS4N65MD
Tube
80 PCS
Absolute Maximun Ratings
Tc= 2 5
℃
unless otherwise specified
Symbol Parameter
VDSS Drain-to-Source
Voltage
RS4N65MD
Units
650
4
V
℃
ID
Continuous Drain Current TC=25
Pulsed Drain Current (Note*1)
Power Dissipation
A
IDM
PD
16
107
±30
W
V
VGS
Gate- to- Source Voltage
Single Pulse Avalanche Engergy
EAS
80
mJ
L = 10mH, VDD = 50V, RG = 25 Ω
Maximum Temperature for Soldering
300
260
TL TPKG
Leads at 0.063in(1.6mm)from Case for 10 seconds
Package Body for 10 seconds
℃
TJ and
TSTG
Operating Junction and Storage
Temperature Range
-55 to
150
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the“ Absolute Maximum Ratings” Table may cause permanent
damage to the device.
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RS4N65MD
N Channe
l
M
OSFET
Thermal Resistance
Symbol
Parameter
RS4N65MD
Units
Test Conditions
Drain lead soldered to water cooled
heatsink, PD adjusted for a peak
RθJC
RθJA
Junction-to-Case
1.16
℃
℃
junction temperature of + 1 5 0
/ W
Junction-to-
Ambient
80
1 cubic foot chamber,free air.
OFF Characteristics
TJ= 25
℃
unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max. Units
Test Conditions
Drain- to- source Breakdown
Voltage
BVDSS
650
—
—
V
VGS=0V,ID=250µA
VDS=650V,VGS=0
V
IDSS
IGSS
Drain- to- Source Leakage Current
Gate- to- Source Forward Leakage
Gate- to- Source Reverse Leakage
—
—
—
—
—
—
1
µA
100
-100
VGS=30V ,VDS=0V
nA
VGS=-30V ,VDS=0
V
ON Characteristics
TJ=25
℃
unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max. Units
Test Conditions
Static Drain- to- Source On-
Resistance(Note*2)
RDS(on)
—
2
2.4
4
Ω
V
VGS=10V,ID=2A
VGS=VDS,ID=250µ
A
VGS(TH) Gate
Threshold Voltage
3
—
Resistive Switching Characteristics
Essentially independent of operating temperature
Symbol
td(ON)
trise
Parameter
Turn- on Delay Time
Min.
—
Typ.
36
Max. Units
Test Conditions
—
VDS=325V
ID=4A
Rise Time
—
13
—
nS
td(OFF)
tfall
Turn- OFF Delay Time
Fall Time
—
80
—
RG=25Ω
—
24
—
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RS4N65MD
N Channe
l
M
OSFET
Dynamic Characteristics
Essentially independent of operating temperature
Symbol
Ciss
Parameter
Min.
—
Typ.
543
53
4.5
15
3
Max. Units
Test Conditions
Input Capacitance
—
VGS=0V
VDS=25V
f=1.0MHz
Coss
Crss
Qg
Output Capacitance
—
—
—
—
—
—
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
—
—
VDS=520V
ID=4A
Qgs
Gate- to- Source Charge
Gate-to-Drain(” Miller”) Charge
—
VGS=10V
Qgd
—
7
Source- Drain Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
Maximum Pulsed Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
Typ.
—
Max. Units
Test Conditions
4
16
1.4
—
A
A
Integral pn- diode
in MOSFET
ISM
VSD
trr
—
—
—
—
V
IS=2A,VGS=0V
VGS=0V
IS=2A,di/dt=100A/
µs
—
550
1.38
nS
µC
Qrr
—
—
Notes:
* 1. Repetitive rating, pulse width limited by maximum junction temperature.
* 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
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RS4N65MD
N Channe
l
M
OSFET
Package outline drawing
(TO-251 Unit: mm )
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RS4N65MD
N Channe
l
M
OSFET
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