REASUNOS-RS60N30D
| Part # | REASUNOS-RS60N30D |
Download  | REASUNOS-RS60N30D |
RS60N30D
N Channe
l
M
OSFET
ID
R
DS
(ON)(Typ )
VDSS
30A
22mΩ
60V
Applications:
• Load Switch
• PWM Applications
• Power Managment
Features:
• Fast switching speed
• 100% avalanche tested
• Improved dv/dt capability
Ordering Information
Part Number
Package
T0-252
Marking
Packing
Qty.
RS60N30D
RS60N30D
Tape&reel
2500 PCS
Absolute Maximun Ratings
Tc= 2 5
℃
unless otherwise specified
Symbol Parameter
VDSS Drain-to-Source
Voltage
Continuous Drain Current TC=25
RS60N30D
Units
60
30
V
℃
ID
℃
ID
Continuous Drain Current TC=100
Pulsed Drain Current
14
A
IDM
PD
VGS
60
Power Dissipation
45
W
V
Gate- to- Source Voltage
±20
Single Pulse Avalanche Engergy
EAS
72
mJ
L = 0.5mH,VDD = 30V, VG = 10V, Tj = 25
℃
Maximum Temperature for Soldering
300
260
TL TPKG
Leads at 0.063in(1.6mm)from Case for 10 seconds
Package Body for 10 seconds
℃
TJ and
TSTG
Operating Junction and Storage
Temperature Range
-55 to
150
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the“ Absolute Maximum Ratings” Table may cause permanent
damage to the device.
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Copyright Reasunos
RS60N30D
N Channe
l
M
OSFET
Thermal Resistance
Symbol
Parameter
RS60N30D
Units
Test Conditions
Drain lead soldered to water cooled
heatsink, PD adjusted for a peak
RθJC
RθJA
Junction-to-Case
3.3
℃
℃
junction temperature of + 1 5 0
/ W
Junction-to-
Ambient
60
1 cubic foot chamber,free air.
OFF Characteristics
TJ= 25
℃
unless otherwise specified
Symbol
BVDSS
IDSS
Parameter
Min.
Typ.
Max. Units
Test Conditions
Drain- to- source Breakdown
Voltage
60
—
—
V
VGS=0V,ID=250µA
Drain- to- Source Leakage Current
Gate- to- Source Forward Leakage
—
—
—
—
1
µA
VDS=60V,VGS=0V
VGS=20V ,VDS=0V
100
IGSS
nA
VGS=-20V ,VDS=0
V
Gate- to- Source Reverse Leakage
—
—
-100
ON Characteristics
TJ=25
℃
unless otherwise specified
Symbol
Parameter
Min.
—
Typ.
22
Max. Units
Test Conditions
35
40
mΩ VGS=10V,ID=20A
mΩ VGS=4.5V,ID=10A
Static Drain- to- Source On-
Resistance
RDS(on)
—
26
VGS=VDS,ID=250µ
VGS(TH) Gate
Threshold Voltage
1.2
1.5
2.5
V
A
Resistive Switching Characteristics
Essentially independent of operating temperature
Symbol
td(ON)
trise
Parameter
Turn- on Delay Time
Min.
—
Typ.
5
Max. Units
Test Conditions
—
Rise Time
—
2.6
16
—
VDS=30V ID=2A
RG=3Ω VGS=10V
nS
td(OFF)
tfall
Turn- OFF Delay Time
Fall Time
—
—
—
2.3
—
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Copyright Reasunos
RS60N30D
N Channe
l
M
OSFET
Dynamic Characteristics
Essentially independent of operating temperature
Symbol
Ciss
Parameter
Min.
—
Typ.
500
60
25
47
6
Max. Units
Test Conditions
Input Capacitance
—
VGS= 0V
VDS=30V
f=1.0MHz
Coss
Crss
Qg
Output Capacitance
—
—
—
—
—
—
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
—
—
VDS= 30V
ID=4.5A
Qgs
Gate- to- Source Charge
Gate-to-Drain(” Miller”) Charge
—
VGS=10V
Qgd
—
14
Source- Drain Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
Maximum Pulsed Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
—
Typ.
—
Max. Units
Test Conditions
30
60
1.2
—
A
A
Integral pn- diode
in MOSFET
ISM
VSD
trr
—
—
—
—
V
IS=20A,VGS=0V
VGS=0V
IS=20A
—
35
53
nS
nC
Qrr
—
—
di/dt=100A/µs
Notes:
* 1. Repetitive rating, pulse width limited by maximum junction temperature.
* 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
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Copyright Reasunos
RS60N30D
N Channe
l
M
OSFET
Package outline drawing
(TO-252 Unit: mm )
尺寸
尺寸
尺寸
Max
0.58
1.15
0.58
0.12
8
符号
符号
符号
Min
Max
Min
0.80
0.60
9.70
1.30
Max
1.20
1.00
10.30
1.70
Min
0.48
0.95
0.48
0.00
0
W
W1
W2
W3
W4
L
6.50
6.70
L1
L2
L3
L4
L5
T
T1
T2
T3
T4
0
(4.572)
0.6
0.8
0.68
0.88
(5.3)
(5.20)
2.40
6.00
6.20
2.20
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Copyright Reasunos
RS60N30D
N Channe
l
M
OSFET
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