REASUNOS-RS7N65F
| Part # | REASUNOS-RS7N65F |
Download  | REASUNOS-RS7N65F |
RS7N65F
N Channe
l
M
OSFET
ID
R
DS
(ON)(Typ )
VDSS
7A
1.1Ω
650V
Applications:
• Switch Mode Power Supply(SMPS)
• Uninterruptible Power Supply (UPS)
• Power Factor Correction (PFC)
Features:
• Fast switching speed
• 100% avalanche tested
• Improved dv/dt capability
Ordering Information
Part Number
Package
Marking
Packing
Qty.
RS7N65F
T0-220F
RS7N65F
Tube
50 PCS
Absolute Maximun Ratings
T
c= 2 5
℃
unless otherwise specified
Symbol Parameter
VDSS Drain-to-Source
Voltage
RS7N65F
Units
650
7
V
℃
ID
Continuous Drain Current TC=25
Pulsed Drain Current (Note*1)
Power Dissipation
A
IDM
PD
28
35
W
V
VGS
Gate- to- Source Voltage
±30
Single Pulse Avalanche Engergy
L = 10mH, VDD = 50V, RG = 25 Ω
EAS
165
mJ
Maximum Temperature for Soldering
300
260
Leads at 0.063in(1.6mm)from Case for 10
seconds
TL TPKG
℃
Package Body for 10 seconds
TJ and
TSTG
Operating Junction and Storage
Temperature Range
-55 to
150
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the“ Absolute Maximum Ratings” Table may cause
permanent damage
to the device.
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RS7N65F
N Channe
l
M
OSFET
Thermal Resistance
Symbol Parameter
RS7N65F
Units
Test Conditions
Drain lead soldered to water cooled
heatsink, PD adjusted for a peak
RθJC
Junction-to-Case
2.84
℃
junction temperature of + 1 5 0
℃
/ W
Junction-to-
Ambient
RθJA
40.25
1 cubic foot chamber,free air.
OFF Characteristics
TJ= 25
℃
unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
Units Test
Conditions
Drain- to- source Breakdown
Voltage
Drain- to- Source Leakage
Current
Gate- to- Source Forward
Leakage
Gate- to- Source Reverse
Leakage
VGS=0V,ID=250µ
A
VDS=650V,VGS=
0V
VGS=30V ,VDS=0
V
VGS=-30V ,VDS=
0V
BVDSS
650
—
—
—
—
—
—
1
V
IDSS
IGSS
µA
—
100
-100
nA
—
ON Characteristics
TJ=25
℃
unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
Units Test
Conditions
Static Drain- to- Source On-
Resistance(Note*2)
VGS=10V,ID=3.5
A
VGS=VDS,ID=25
0µA
RDS(on)
—
3
1.1
—
1.35
4
Ω
V
VGS(TH
)
Gate Threshold Voltage
Resistive Switching Characteristics
Essentially independent of operating temperature
Symbol
td(ON)
trise
Parameter
Turn- on Delay Time
Rise Time
Min. Typ. Max.
Units Test
Conditions
—
—
—
—
39
23
—
—
—
—
VDS=325V
ID=7A
RG=25Ω
nS
td(OFF) Turn-
OFF Delay Time
tfall Fall
Time
137
60
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RS7N65F
N Channe
l
M
OSFET
Dynamic Characteristics
Essentially independent of operating temperature
Symbol
Ciss
Parameter
Min. Typ. Max.
Units Test
Conditions
Input Capacitance
—
—
—
—
—
—
891
87
—
—
—
—
—
—
VGS=0V
VDS=25V
f=1.0MHz
Coss
Crss
Qg
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
10
32
VDS=520V
ID=7A
VGS=10V
Qgs
Gate- to- Source Charge
Gate-to-Drain(” Miller”) Charge
4.6
14
Qgd
Source- Drain Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max.
Units Test
Conditions
Continuous Source Current
Maximum Pulsed Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
—
7
28
1.4
—
A
A
Integral pn- diode
in MOSFET
ISM
VSD
trr
—
V
IS=3.5A,VGS=0V
VGS=0V
IS=7A,di/dt=100A
/µs
575
1.9
nS
µC
Qrr
—
Notes:
* 1. Repetitive rating, pulse width limited by maximum junction temperature.
* 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
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RS7N65F
N Channe
l
M
OSFET
Package outline drawing
(TO-220F Unit: mm )
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RS7N65F
N Channe
l
M
OSFET
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