RENESAS-RJH1CM5DPQ-E0-T2
| Part # | RENESAS-RJH1CM5DPQ-E0-T2 |
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Preliminary
Datasheet
RJH1CM5DPQ-E0
1200V – 15A – IGBT
Application: Inverter
R07DS0520EJ0800
Rev.8.00
Oct 02, 2014
Features
•
•
Short circuit withstand time (10
μ
s typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 2.1 V typ. (at I
C
= 15 A, V
GE
= 15 V, Ta = 25°C)
•
•
•
Built-in fast recovery diode (t
rr
= 200 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 125 ns typ. (at V
CC
= 600 V, V
GE
= 15 V, I
C
= 15 A, Rg = 5
Ω
, Ta = 25°C, inductive load)
Outline
RENESAS Package code:
PRSS0003ZE-A
(Package name:
TO-247)
C
4
1. Gate
2. Collector
3. Emitter
4. Collector
G
1
2
3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
1200
30
Unit
V
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
V
CES
/ V
R
V
GES
V
Collector current
Tc = 25°C
I
C
I
C
30
A
Tc = 100°C
15
A
Collector peak current
I
C
(peak)
Note1
45
A
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
I
DF
15
A
I
DF
(peak)
Note1
45
A
Note2
P
C
245
0.51
0.69
150
W
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
θ
j-c
Note2
θ
j-cd
Note2
Tj
°C/W
°C/W
°C
°C
Storage temperature
Tstg
–55 to +150
Notes: 1.
PW
≤
10
μ
s, duty cycle
≤
1%
2. Value
at Tc = 25
°
C
R07DS0520EJ0800 Rev.8.00
Oct 02, 2014
Page 1 of 9
RJH1CM5DPQ-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltage collector current
/ Diode reverse current
I
CES
/I
R
—
—
100
μ
A
V
CE
= 1200 V, V
GE
= 0
Gate to emitter leak current
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
±1
6.5
2.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
μ
A
V
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 15 A, V
GE
= 15 V
Note3
I
C
= 30 A, V
GE
= 15 V
Note3
V
CE
= 25 V
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
2.1
2.9
1150
70
V
V
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
μ
s
V
GE
= 0
f = 1 MHz
30
74
V
GE
= 15 V
V
CE
= 300 V
Qge
Qgc
t
d(on)
t
r
10
I
C
= 15 A
40
40
V
CC
= 600 V
V
GE
= 15 V
18
I
C
= 15 A
Rg = 5
Ω
Inductive load
Turn-off delay time
Fall time
t
d(off)
t
f
100
125
1.6
0.7
2.3
10
Turn-on energy
E
on
Turn-off energy
E
off
Total switching energy
Short circuit withstand time
E
total
t
sc
V
CC
≤
720 V, V
GE
= 15 V
Tc
≤
125°C
FRD forward voltage
V
F
t
rr
—
—
—
—
1.6
200
0.8
9.5
—
—
—
—
V
ns
μ
C
A
I
F
= 15 A
Note3
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3.
Pulse test.
I
F
= 15 A
di
F
/dt = 100 A/
μ
s
Q
rr
I
rr
R07DS0520EJ0800 Rev.8.00
Oct 02, 2014
Page 2 of 9
RJH1CM5DPQ-E0
Preliminary
Main Characteristics
Co
ll
ector
Dissip
at
i
on
vs.
Ca
s
e
T
em
p
erat
u
re
M
a
xi
m
u
m
D
C Co
ll
ector C
u
rrent
vs.
Ca
s
e
T
em
p
erat
u
re
300
2
5
0
200
1
5
0
100
5
0
4
0
30
20
10
0
0
0
2
5 5
0 7
5
100 12
5
1
5
0 17
5
Ca
s
e
T
em
p
erat
u
re
T
c (
°
C)
0
2
5 5
0 7
5
100 12
5
1
5
0 17
5
Ca
s
e
T
em
p
erat
u
re
T
c (
°
C)
M
a
xi
m
u
m Sa
f
e O
p
erat
i
on Area
Tu
rn
–
o
ff
SOA
6
0
5
0
4
0
30
20
10
0
1000
100
10
1
T
c
=
2
5
°
C
S
i
ng
l
e
puls
e
0
.
1
1
10
100
1000
10000
0
4
00
8
00
1200
1
6
00
Co
ll
ector to
E
m
i
tter
V
o
l
tage
V
C
E
(
V
)
Co
ll
ector to
E
m
i
tter
V
o
l
tage
V
C
E
(
V
)
Typi
ca
l
O
u
t
pu
t C
h
aracter
is
t
i
c
s
Typi
ca
l
O
u
t
pu
t C
h
aracter
is
t
i
c
s
5
0
4
0
30
20
10
0
5
0
4
0
30
20
10
0
1
5 V
1
8 V
T
c
=
2
5
°
C
1
8 V
T
c
=
1
5
0
°
C
P
uls
e
T
e
s
t
P
uls
e
T
e
s
t
12
V
1
5 V
12
V
10
V
10
V
V
G
E
= 8 V
V
G
E
= 8 V
0
1
2
3
4
5
0
1
2
3
4
5
Co
ll
ector to
E
m
i
tter
V
o
l
tage
V
C
E
(
V
)
Co
ll
ector to
E
m
i
tter
V
o
l
tage
V
C
E
(
V
)
R07DS0520EJ0800 Rev.8.00
Oct 02, 2014
Page 3 of 9
RJH1CM5DPQ-E0
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
6
5
4
3
2
1
6
5
4
3
2
1
Tc =
2
5
°
C
Tc =
1
50
°
C
Pulse
T
e
st
Pulse
T
e
st
I
C
= 30 A
I
C
= 30 A
15 A
15 A
7.5 A
7.5 A
6
8
10 12 14 16 18 20
6
8
10 12 14 16 18 20
Gate to Emitter Voltage
V
GE
(V)
Gate to Emitter Voltage
V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Case
T
e
mparature (Typical)
Typical Transfer Characteristics
5
50
40
30
20
10
0
V
GE
= 15 V
Pulse Test
Tc =
2
5
°
C
4
3
2
I
C
= 30 A
150
°
C
15 A
7.5 A
V
CE
= 10 V
Pulse Test
1
−
25
0
25 50 75
100 125 150
0
4
8
12
16
20
Case
T
e
mparature
T
c
(
°
C)
Gate to Emitter Voltage
V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case
T
e
mparature (Typical)
Frequency Characteristics (Typical)
10
8
20
16
12
8
0
Collector current wave
(Square wave)
I
C
= 10 mA
1 mA
6
4
Tj = 125°C
Tc = 90°C
V
V
CE
= 400 V
GE
= 15 V
2
4
V
CE
= 10 V
Pulse Test
Rg = 5
Ω
duty = 50%
0
0
1
−
25
0
25 50 75
100 125 150
10
100
1000
Case
T
e
mparature
T
c
(
°
C)
Frequency f
(kHz)
R07DS0520EJ0800 Rev.8.00
Oct 02, 2014
Page 4 of 9
RJH1CM5DPQ-E0
Preliminary
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2)
100
V
CC
= 600 V, V
GE
= 15 V
1000
100
10
Rg = 5
Ω
, Tc = 150
°
C
t
f
d(off)
t
t
10
1
d(on)
Eon
t
r
Eoff
V
CC
= 600 V, V
GE
= 15 V
Rg = 5
Ω
, Tc = 150
°
C
1
0.1
1
10
100
1
10
100
Collector Current
I
C
(A)
(Inductive load)
Collector Current
I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
100
V
CC
= 600 V, V
GE
= 15 V
Switching Characteristics (Typical) (3)
1000
100
10
I
C
= 15 A,
T
c =
1
50
°
C
t
f
10
1
t
d(off)
Eon
Eoff
t
d(on)
t
r
V
CC
= 600 V, V
GE
= 15 V
C
= 15 A,
T
c =
1
50
I
°
C
1
0.1
1
10
100
1
10
100
Gate Resistance
Rg (
Ω
)
(Inductive load)
Gate Resistance
Rg (
Ω
)
(Inductive load)
Switching Characteristics (Typical) (6)
100
V
CC
= 600 V, V
GE
= 15 V
Switching Characteristics (Typical) (5)
1000
100
10
I
C
= 15 A, Rg = 5
Ω
t
f
10
1
t
d(off)
t
d(on)
Eon
t
r
Eoff
V
CC
= 600 V, V
GE
= 15 V
I
C
= 15 A, Rg = 5
Ω
1
0.1
25
50 75
100
125
150
25
50
75
100
125
150
Case
T
e
mperature
T
c
(
°C)
(Inductive load)
Case
T
e
mperature
T
c
(
°C)
(Inductive load)
R07DS0520EJ0800 Rev.8.00
Oct 02, 2014
Page 5 of 9
RJH1CM5DPQ-E0
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
Dynamic Input Characteristics (Typical)
10000
1000
100
10
800
600
400
200
0
16
12
8
V
GE
Cies
Coes
Cres
4
I
C
= 15 A
V
GE
= 0 V
f = 1 MHz
V
CC
= 300 V
V
CE
20
Tc = 25
°
C
Tc = 25
°
C
1
0
0
50
100 150 200 250 300
0
40
60
80
100
Collector to Emitter Voltage
V
CE
(V)
Gate Charge
Qg (nC)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
1000
800
600
400
200
0
3.0
2.5
2.0
1.5
1.0
0.5
I
F
= 15 A
I
F
= 15 A
Tc = 150
°
C
Tc = 150
°
C
25
°
C
25
160
°
C
0
0
40
80
120
200
0
40
80
120
160
200
Diode Current Slope
di
F
/dt (A/
µ
s)
Diode Current Slope
di
F
/dt (A/
µ
s)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Forward Current vs. Forward Voltage (Typical)
50
30
25
20
15
10
5
I
F
= 15 A
40
Tc =
2
5
°
C
30
20
10
0
Tc = 150
°
C
150
°
C
25
°
C
V
CE
= 0 V
Pulse Test
0
0
40
80
120
160
200
0
1
2
3
4
Diode Current Slope
di
F
/dt (A/
µ
s)
C-E Diode Forward Voltage
V
CEF
(V)
R07DS0520EJ0800 Rev.8.00
Oct 02, 2014
Page 6 of 9
RJH1CM5DPQ-E0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25
°
C
D = 1
0.5
1
0.2
θ
– c(t) =
γ
s (t) •
θ
– c
j
j
θ
– c = 0.51
°
C/W, Tc = 25
°
C
j
0.05
0.02
0.01
1 shot pulse
0.1
PW
T
P
DM
D =
PW
T
0.01
100
μ
1 m
10 m
100 m
1
10
100
Pulse Width
PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25
°
C
D = 1
0.5
1
0.2
θ
– c(t) =
γ
s (t) •
θ
– c
j
j
θ
– c = 0.69
°
C/W, Tc = 25
°
C
j
0.05
0.02
0.01
1 shot pulse
0.1
PW
T
P
DM
D =
PW
T
0.01
100
μ
1 m
10 m
100 m
1
10
100
Pulse Width
PW (s)
R07DS0520EJ0800 Rev.8.00
Oct 02, 2014
Page 7 of 9
RJH1CM5DPQ-E0
Preliminary
Switching Time Test Circuit
Waveform
90%
V
GE
Diode clamp
10%
L
I
C
90%
90%
D.U.T
V
CC
Rg
10%
t
f
10%
t
d(off)
t
d(on)
t
r
Diode Reverse Recovery Time Test Circuit
V
CC
Waveform
I
F
D.U.T
di
F
/dt
t
rr
L
I
F
0
I
rr
0.5 I
rr
0.9 I
rr
Rg
R07DS0520EJ0800 Rev.8.00
Oct 02, 2014
Page 8 of 9
RJH1CM5DPQ-E0
Preliminary
Package Dimension
Pac
k
age
N
ame
TO-
2
47
JEITA
Pac
k
age Code
R
ENE
S
A
S Code
PRSS000
3ZE-A
Prev
i
ous Code
M
A
SS
[T
yp
.]
6
.
0g
Un
i
t
:
mm
⎯
⎯
5
.
02 0
.
19
φ
3.
60 0
.
1
15
.
9
4
0
.
19
+
0
.
1
–
0
.
2
2
.
10
1
3.
26
1
.
2
7
0
.
1
3
5
.4
5
0
.7
1 0
.
1
2
.4
1
5
.4
5
Ordering Information
Orderable Part Number
Quantity
Shipping Container
RJH1CM5DPQ-E0#T2
450 pcs
Tube
R07DS0520EJ0800 Rev.8.00
Oct 02, 2014
Page 9 of 9
Notice
1. Descriptions
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.
You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment.
Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
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Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free.
Renesas Electronics
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
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Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
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should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
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Renesas Electronics shall not be in any way liable for any damages or losses
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should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics.
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malfunctions under certain use conditions.
Further, Renesas Electronics products are not subject to radiation resistance design.
Please be sure to implement safety measures to guard them against the
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(Note 1)
“Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
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Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2265-6688, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
12F., 234 Teheran-ro, Gangnam-Ku, Seoul, 135-920, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2014 Renesas Electronics Corporation. All rights reserved.
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