RENESAS-UPC3224TB-E3-A

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, 2010, NEC Electronics Corporation merged with Renesas Technology  
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April 1

st

, 2010  
Renesas Electronics Corporation  
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(http://www.renesas.com)  

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DATA SHEET  
BIPOLAR ANALOG INTEGRATED CIRCUIT  
µ
PC3224TB  
5 V,
 
SILICON MMIC  
WIDEBAND AMPLIFIER  
DESCRIPTION  
The
µ
PC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners.
 
This IC is manufactured using  
our 30 GHz f

max

UHS0 (Ultra High Speed Process) silicon bipolar process.  
FEATURES  
•
•
•
Wideband response
 
: f
u
= 3.2 GHz TYP. @ 3 dB bandwidth  
Low current  
Power gain  
: I

CC

= 9.0 mA TYP.  
: G

P

= 21.5 dB TYP. @ f = 1.0 GHz  
: G

P

= 21.5 dB TYP. @ f = 2.2 GHz  
: V

CC

= 4.5 to 5.5 V  
•
•
Supply voltage  
Port impedance  
: input/output 50
Ω
 
APPLICATION  
•
IF amplifiers in DBS converters etc.  
ORDERING INFORMATION  
Part Number  
Package  
6-pin super minimold  
Marking  
C3K  
Supplying Form  
•
Embossed tape 8 mm wide  
µ
PC3224TB-E3  
•
1, 2, 3 pins face the perforation side of tape  
•
Qty 3 kpcs/reel  
Remark
To order evaluation samples, contact your nearby sales office.  
Part number for sample order:
µ
PC3224TB  
Caution Observe
 
precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No.
 
PU10490EJ01V0DS (1st edition)  
Date Published
 
May 2004
 
CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2004  

µ
PC3224TB  
PIN CONNECTIONS  
Pin No.  
Pin Name  
INPUT  
GND  
(Top View)  
(Bottom View)  
1
2
3
4
5
6
3
2
1
4
5
6
4
5
6
3
2
1
GND  
OUTPUT  
GND  
V
CC  
PRODUCT LINE-UP OF 5
 
V-BIAS SILICON MMIC MEDIUM WIDEBAND AMPLIFIER  
(T

A

= +25
°
C, f = 1 GHz, V
CC
= V
out
= 5.0 V, Z
S
= Z
L
= 50
Ω
)  
f

u  

P
O (sat)  
G
P  
NF  
I
CC  
Part No.  
Package  
Marking  
(GHz)  
(dBm)  
(dB)  
(dB)  
(mA)  
µ
PC2711TB  
µ
PC2712TB  
µ
PC3215TB

Note  

µ
PC3224TB  
2.9  
2.6  
2.9  
3.2  
+1.0  
+3.0  
+3.5  
+4.0  
13  
20  
5.0  
4.5  
2.3  
4.3  
12  
12  
14  
9.0  
6-pin super minimold  
C1G  
C1H  
C3H  
C3K  
20.5  
21.5  
Note
µ
PC3215TB is f = 1.5 GHz  
Remark
Typical performance.
 
Please refer to
ELECTRICAL CHARACTERISTICS
in detail.  
2
Data Sheet
 
PU10490EJ01V0DS  

µ
PC3224TB  
PIN EXPLANATIONS  
PIN  
Applied  
Pin Voltage  
Pin Name  
Function and Applications  
Note  
(V)  
No.  
Voltage (V)  
1
INPUT  
–
0.91  
Signal input pin.  
A internal matching circuit, configured with resistors, enables 50
Ω  
connection over a wide band.  
A multi-feedback circuits is designed to cancel the deviations of h

FE

and  
resistance.  
This pin must be coupled to signal source with capacitor for DC cut.  
4
6
OUTPUT  
–
4.42  
Signal output pin.  
A internal matching circuit, configured with resistors, enables 50
Ω  
connection over a wide band.  
This pin must be coupled to next stage with capacitor for DC cut.  
V
CC  
4.5 to 5.5  
–
–
Power suplly pin.  
This pin should be externally equipped with bypass capacitor to minimize  
its impedance.  
2
3
5
GND  
0
Ground pin.  
This pin should be connected to system ground with minimum  
inductance. Ground pattern on the board should be formed as wide as  
possible.  
All the ground pins must be connected together with wide ground pattern  
to decrease impedance difference.  
Note
Pin Voltage is measured at V

CC

= 5.0 V  
3
Data Sheet
 
PU10490EJ01V0DS  

µ
PC3224TB  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Supply Voltage  
Symbol  
Conditions  
Ratings  
6.0  
Unit  
V
V
CC  
I
CC  
P
D  
T
A
= +25
°
C  
T
A
= +25
°
C  
T
A
= +85
°
C  
Total Circuit Current  
Power Dissipation  
25  
mA  
mW  
°
C  
Note  
270  
Operating Ambient Temperature  
Storage Temperature  
Input Power  
T
A  
−
40 to +85  
−
55 to +150  
+10  
T
stg  
P
in  
°
C  
T
A
= +25
°
C  
dBm  
Note
Mounted on double-sided copper-clad 50
×
50
×
1.6 mm epoxy glass PWB  
RECOMMENDED OPERATING RANGE  
Parameter  
Supply Voltage  
Operating Ambient Temperature  
Symbol  
V
CC  
Conditions  
MIN.  
4.5  
TYP.  
5.0  
MAX.  
Unit  
V
5.5  
T
A  
−
40  
+25  
+85  
°
C  
ELECTRICAL CHARACTERISTICS
 
(T
A
= +25
°
C, V
CC
= 5.0 V, Z
S
= Z
L
= 50
Ω
)  
Parameter  
Symbol  
I
CC  
Test Conditions  
No input signal  
MIN.  
7.0  
TYP.  
9.0  
MAX.  
12.0  
24.0  
24.5  
−
Unit  
mA  
dB  
Circuit Current  
Power Gain  
G
P  
f = 1.0 GHz, P
in
=
−
30 dBm  
f = 2.2 GHz, P
in
=
−
30 dBm  
f = 1.0 GHz, P
in
=
−
5 dBm  
f = 2.2 GHz, P
in
=
−
5 dBm  
19.0  
18.5  
+1.5  
−
1.5  
−
6.5  
−
8.5  
−
21.5  
21.5  
+4.0  
+1.5  
−
3.5  
−
5.5  
4.3  
Saturated Output Power  
P
O (sat)  
dBm  
dBm  
dB  
−
Gain 1 dB Compression Output  
Power  
P
O (1 dB)
 
f = 1.0 GHz  
f = 2.2 GHz  
−
−
Noise Figure  
NF  
f = 1.0 GHz  
5.8  
5.8  
−
f = 2.2 GHz  
−
4.3  
Upper Limit Operating Frequency  
Isolation  
f
u  
3 dB down below flat gain at f = 0.1 GHz  
f = 1.0 GHz, P
in
=
−
30 dBm  
f = 2.2 GHz, P
in
=
−
30 dBm  
f = 1.0 GHz, P
in
=
−
30 dBm  
f = 2.2 GHz, P
in
=
−
30 dBm  
f = 1.0 GHz, P
in
=
−
30 dBm  
f = 2.2 GHz, P
in
=
−
30 dBm  
f = 0.1 to 2.2 GHz  
2.8  
3.2  
GHz  
dB  
ISL  
35.0  
37.0  
9.0  
40.0  
42.0  
12.0  
14.0  
17.0  
12.0  
±
0.8  
−
−
Input Return Loss  
Output Return Loss  
Gain Flatness  
RL
in  
RL
out  
∆
G
P  
−
dB  
dB  
dB  
10.0  
11.0  
8.0  
−
−
−
−
−
4
Data Sheet
 
PU10490EJ01V0DS  

µ
PC3224TB  
OTHER CHARACTERISTICS,
 
FOR REFERENCE PURPOSES ONLY  
(T

A

= +25
°
C, V
CC
= 5.0 V, Z
S
= Z
L
= 50
Ω
)  
Parameter  
Symbol  
OIP
3  
Test Conditions  
Reference Value  
Unit  
Output Intercept Point  
f = 1.0 GHz  
f = 2.2 GHz  
+7.0  
+5.5  
dBm  
5
Data Sheet
 
PU10490EJ01V0DS  

µ
PC3224TB  
TEST CIRCUIT  
V
CC  
C
4  
1 000 pF  
1 000 pF  
C
3  
6
50
Ω
 
IN  
50
Ω  
C
1  
C
2  
4
1
OUT  
100 pF  
100 pF  
2, 3, 5  
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.  
COMPONENTS OF TEST CIRCUIT FOR  
MEASURING ELECTRICAL CHARACTERISTICS  
Type  
Value  
100 pF  
C
1
, C
2  
C
3  
Chip Capacitor  
Chip Capacitor  
1 000 pF  
1 000 pF  
C
4  
Feed-through Capacitor  
CAPACITORS FOR THE V
CC
, INPUT AND OUTPUT PINS  
Capacitors of 1000 pF are recommendable as the bypass capacitor for the V
CC
pin and the coupling capacitors for  
the input and output pins.  
The bypass capacitor connected to the V

CC

pin is used to minimize ground impedance of V
CC
pin. So,
 
stable bias  
can be supplied against V

CC

fluctuation.  
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial  
impedance. Their
 
capacitances are therefore selected as lower impedance against a 50
Ω
load. The
 
capacitors thus  
perform as high pass filters, suppressing low frequencies to DC.  
To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit.
 
In the case of under  
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF.
 
Because the coupling capacitors are  
determined by equation, C = 1/(2
π
Rfc).  
6
Data Sheet
 
PU10490EJ01V0DS  

µ
PC3224TB  
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD  
AMP-2  
IN  
OUT  
C1  
C2  
C3  
V
CC  
C4  
COMPONENT LIST  
Notes  
Value  
1. 30
 
×
30
×
0.4 mm double sided copper clad polyimide board.  
2. Back
 
side: GND
 
pattern  
C
1
, C
2  
C
3
, C
4  
100 pF  
1 000 pF  
3. Solder
 
plated on pattern  
4.  
: Through
 
holes  
7
Data Sheet
 
PU10490EJ01V0DS  

µ
PC3224TB  
TYPICAL CHARACTERISTICS
 
(T
A
= +25
°
C , unless otherwise specified)  
CIRCUIT CURRENT vs.  
OPERATING AMBIENT TEMPERATURE  
CIRCUIT CURRENT vs. SUPPLY VOLTAGE  
16  
12  
No input signal  
No input signal  
V
CC
= 5.0 V  
14  
12  
11  
10  
9
T
A
=
+
85
˚C  
10  
8
T
A
=
+
25
˚C  
6
8
4
7
2
T
A
=
−
40
˚C  
6
0
0
1
2
3
4
5
6
−
60
−
40
−
20  
0
+
20
+
40
+
60
+
80  
+
100  
Supply Voltage
 
V
CC
(V)  
Operating Ambient Temperature
 
T (
°
C)  
A
INPUT RETURN LOSS vs. FREQUENCY  
POWER GAIN vs. FREQUENCY  
25  
23  
21  
19  
17  
15  
T =
 
+
25
˚C  
A
T
A
=
+
25
˚C  
10  
0
V
CC
= 5.5 V  
−
10  
−
20  
−
30  
V
CC
= 5.5 V  
V
CC
= 5.0 V  
V
CC
= 5.0 V  
V
CC
= 4.5 V  
V
CC
= 4.5 V  
0.1  
1.1  
2.1  
3.1  
4.1  
5.1  
0.1  
1.1  
2.1  
3.1  
4.1  
5.1  
Frequency f
 
(GHz)  
Frequency f
 
(GHz)  
ISOLATION vs. FREQUENCY  
OUTPUT RETURN LOSS vs. FREQUENCY  
0
−
20  
T
A
=
+
25
˚C  
T
A
=
+
25
˚C  
10  
0
−
40  
−
10  
−
20  
−
30  
V
CC
= 4.5 V  
−
60  
V
CC
= 4.5 to 5.5 V  
−
80  
V
CC
= 5.0 to 5.5 V  
−
100  
0.1  
1.1  
2.1  
3.1  
4.1  
5.1  
0.1  
1.1  
2.1  
3.1  
4.1  
5.1  
Frequency f
 
(GHz)  
Frequency f
 
(GHz)  
Remark
The graphs indicate nominal characteristics.  
8
Data Sheet
 
PU10490EJ01V0DS  

µ
PC3224TB  
POWER GAIN vs. FREQUENCY  
INPUT RETURN LOSS vs. FREQUENCY  
25  
23  
21  
19  
17  
15  
V
CC
= 5.0 V  
V
CC
= 5.0 V  
10  
0
T =
 
−
40
˚C  
A
T
A
=
+
25 to
+
85
˚C  
−
10  
−
20  
−
30  
T
A
=
+
85
˚C  
T
A
=
−
40
˚C  
T
A
=
+
25
˚C  
0.1  
1.1  
2.1  
3.1  
4.1  
5.1  
0.1  
1.1  
2.1  
3.1  
4.1  
5.1  
Frequency f
 
(GHz)  
Frequency f
 
(GHz)  
ISOLATION vs. FREQUENCY  
OUTPUT RETURN LOSS vs. FREQUENCY  
0
−
20  
V
CC
= 5.0 V  
V
CC
= 5.0 V  
10  
0
−
40  
−
10  
−
20  
−
30  
T =
 
+
85
˚C  
A
−
60  
T =
 
−
40 to
+
85
˚C  
A
−
80  
T
A
=
+
25
˚C  
T
A
=
−
40
˚C  
−
100  
0.1  
1.1  
2.1  
3.1  
4.1  
5.1  
0.1  
1.1  
2.1  
3.1  
4.1  
5.1  
Frequency f
 
(GHz)  
Frequency f
 
(GHz)  
Remark
The graphs indicate nominal characteristics.  
9
Data Sheet
 
PU10490EJ01V0DS  

µ
PC3224TB  
OUTPUT POWER vs. INPUT POWER  
OUTPUT POWER vs. INPUT POWER  
10  
5
10  
5
f = 1.0 GHz  
f = 1.0 GHz  
CC
= 5.0 V  
T
A
=
+
25 to
+
85
˚C  
T
A
=
+
25
˚C  
V
V
CC
= 5.5 V  
0
0
V
CC
= 5.0 V  
T
A
=
−
40
˚C  
V
CC
= 4.5 V  
−
5  
−
10  
−
15  
−
5  
−
10  
−
15  
−
20  
−
2
0

40  

−
−
35  
−
30  
−
25  
−
20  
−
15  
−
10  
−
5
0
5
10  
−
40  
−
35  
−
30  
−
25  
−
20  
−
15  
−
10  
−
5
0
5
10  
Input Power
 
P
in
(dBm)  
Input Power
 
P
in
(dBm)  
OUTPUT POWER vs. INPUT POWER  
OUTPUT POWER vs. INPUT POWER  
10  
5
10  
f = 2.2 GHz  
f = 2.2 GHz  
T
A
=
+
25
˚C  
T
A
=
+
25 to
+
85
˚C  
V
CC
= 5.0 V  
5
0
0
V
CC
= 5.5 V  
V
CC
= 5.0 V  
V
−
5  
−
10  
−
15  
−
5  
T
A
=
−
40
˚C  
CC
= 4.5 V  
−
10  
−
15  
−
2
0

40  

−
2
0

40  

−
−
35  
−
30  
−
25  
−
20  
−
15  
−
10  
−
5
0
5
10  
−
−
35  
−
30  
−
25  
−
20  
−
15  
−
10  
−
5
0
5
10  
Input Power
 
P
in
(dBm)  
Input Power
 
P
in
(dBm)  
OUTPUT POWER (2 tones), IM  
3
OUTPUT POWER (2 tones), IM  
3
vs. INPUT POWER  
vs. INPUT POWER  
10  
10  
f
f
1
= 1 000 MHz  
= 1 001 MHz  
f
f
1
= 2 200 MHz  
= 2 201 MHz  
V
CC
= 5.5 V  
5.0 V  
V
CC
= 5.5 V  
5.0 V  
P
out  
P
out  
2
2
0
−
10  
−
20  
−
30  
−
40  
−
50  
−
60  
−
70  
0
−
10  
−
20  
−
30  
−
40  
−
50  
−
60  
−
70  
4.5 V  
5.0 V  
4.5 V  
4.5 V  
5.5 V  
5.5 V  
5.0 V  
4.5 V  
IM  
3
IM
3  
V
CC
= 4.5 V  
V
CC
= 5.5 V  
CC
= 5.0 V  
35 30  
V
−
8
0

50  

−
8
0

50  

− −  
−
−
45  
−
40  
−
−
−
25  
−
20  
−
15  
−
10  
−
5
0
45  
−
40  
−
35  
−
30  
−
25  
−
20  
−
15  
−
10  
−
5
0
Input Power
 
P
in
(dBm)  
Input Power
 
P
in
(dBm)  
Remark
The graphs indicate nominal characteristics.  
10  
Data Sheet
 
PU10490EJ01V0DS  

µ
PC3224TB  
S-PARAMETERS (T
A
= +25
°
C, V
CC
= 5.0 V)  
S
11
−
FREQUENCY  
2.2 GHz  
1.0 GHz  
S

22

−
FREQUENCY  
1.0 GHz  
2.2 GHz  
11  
Data Sheet
 
PU10490EJ01V0DS  

µ
PC3224TB  
PACKAGE DIMENSIONS  
6-PIN SUPER MINIMOLD
 
(UNIT: mm)  
2.1±0.1  
1.25±0.1  
0.1 MIN.  
12  
Data Sheet
 
PU10490EJ01V0DS  

µ
PC3224TB  
NOTES ON CORRECT USE  
(1) Observe
 
precautions for handling because of electro-static sensitive devices.  
(2) Form
 
a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).  
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.  
(3) The
 
bypass capacitor should be attached to V

CC

line.  
(4) The
 
DC cut capacitor must be each attached to input and output pin.  
RECOMMENDED SOLDERING CONDITIONS  
This product should be soldered and mounted under the following recommended conditions.
 
For soldering  
methods and conditions other than those recommended below, contact your nearby sales office.  
Soldering Method  
Infrared Reflow  
Soldering Conditions  
Condition Symbol  
IR260  
Peak temperature (package surface temperature)  
Time at peak temperature  
: 260
°
C or below  
: 10 seconds or less  
: 60 seconds or less  
: 120
±
30 seconds  
: 3 times  
Time at temperature of 220
°
C or higher  
Preheating time at 120 to 180
°
C  
Maximum number of reflow processes  
Maximum chlorine content of rosin flux (% mass)  
: 0.2%(Wt.) or below  
Wave Soldering  
Partial Heating  
Peak temperature (molten solder temperature)  
Time at peak temperature  
: 260
°
C or below  
WS260  
HS350  
: 10 seconds or less  
Preheating temperature (package surface temperature)
 
: 120
°
C or below  
Maximum number of flow processes  
: 1 time  
Maximum chlorine content of rosin flux (% mass)  
: 0.2%(Wt.) or below  
Peak temperature (pin temperature)  
: 350
°
C or below  
Soldering time (per side of device)  
: 3 seconds or less  
: 0.2%(Wt.) or below  
Maximum chlorine content of rosin flux (% mass)  
Caution Do
 
not use different soldering methods together (except for partial heating).  
13  
Data Sheet
 
PU10490EJ01V0DS  

µ
PC3224TB  
•
The information in this document is current as of May, 2004. The information is subject to change  
without notice.
 
For actual design-in, refer to the latest publications of NEC’s data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products.
 
Not all products  
and/or types are available in every country.
 
Please check with an NEC sales representative for  
availability and additional information.  
•
•
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC.
 
NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products.
 
No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer’s equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely.
 
To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
“Standard”, “Special” and “Specific”.
 
The “Specific” quality grade applies only to semiconductor products  
developed based on a customer-designated “quality assurance program” for a specific application.
 
The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
“Standard”: Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
“Special”: Transportation
 
equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
“Specific”: Aircraft,
 
aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is “Standard” unless otherwise expressly specified in NEC’s  
data sheets or data books, etc.
 
If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC’s willingness  
to support a given application.  
(Note)  
(1) “NEC” as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.  
and also includes its majority-owned subsidiaries.  
(2) “NEC semiconductor products” means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00.
 
4
–
0
110  
14  
Data Sheet
 
PU10490EJ01V0DS  

µ
PC3224TB  
For further information, please contact  
NEC Compound Semiconductor Devices, Ltd.  
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)  
techinfo@ml.ncsd.necel.com (technical)  
5th Sales Group, Sales Division
 
TEL: +81-44-435-1588
 
FAX: +81-44-435-1579  
NEC Compound Semiconductor Devices Hong Kong Limited  
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)  
TEL: +852-3107-7303  
TEL: +886-2-8712-0478
 
FAX: +886-2-2545-3859  
TEL: +82-2-558-2120  
FAX: +82-2-558-5209  
FAX: +852-3107-7309  
Hong Kong Head Office  
T
a
ipei Branch Office  
Korea Branch Office  
NEC Electronics (Europe) GmbH  
TEL: +49-211-6503-0
 
FAX: +49-211-6503-1327  
California Eastern Laboratories, Inc.  
TEL: +1-408-988-3500
 
FAX: +1-408-988-0279  
0401