ROHM-Semicon-2SA1036KT146Q

2SA1036K  

Medium Power Transistor (-32V,-500mA)  

Datasheet  

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Outline  

Parameter  

Value  

SMT3  

ꢀ

V

CEO  

-32V  

I

C

-500mA  

ꢀ

SO

T

-346  

SC-59  

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Features  

1)Large I

 

.  

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Inner circuit  

C

ꢀ

I  

=-500mA  

CMAX  

2)Low V  

.

CE(sat)  

ꢀ

Ideal for low-voltage operating.  

3)Complements the 2SC2411K.  

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Application  

GENERAL PURPOSE SMALL SIGNA

L

A

MPLIFIER  

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Packaging specifications  

Basic  

Package  

size  

Taping Reel

 

size Tape

 

width  

Part No.  

Package  

ordering  

Marking  

H

code  

(mm)  

(mm)  

unit.(pcs)  

2SA1036K  

SMT3  

2928  

T146  

180  

8

3000  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

1/6  

20150730 – Rev.002  

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2SA1036K  

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Datasheet  

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Absolute maximum ratings

(T

a

= 25°C)  

Parameter  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Values  

-40  

Unit  

V

Collector-base voltage  

Collector-emitter voltage  

Emitter-base voltage  

-32  

V

-5  

V

Collector current  

-500  

mA  

mW  

℃

*1  

P

D  

Power dissipation  

200  

T

j  

Junction temperature  

Range of storage temperature  

150  

T

stg  

-55 to +150  

℃

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Electrical characteristics

(T

a

= 25°C)  

Values  

Parameter  

Symbol  

Conditions  

Unit  

Min.  

-40  

Typ.  

Max.  

–

Collector-base breakdown  

voltage  

BV

CBO  

BV

CEO  

I =

 

-100μA  

–

V

V

C

Collector-emitter breakdown  

voltage  

I =

 

-1mA  

-32  

–

–

C

BV

EBO  

I

CBO  

Emitter-base breakdown voltage  

Collector cut-off current  

Emitter cut-off current  

I =

 

-100μA  

-5  

–

–

–

–

–

–

–

V

μA  

μA  

mV  

–

E

V

CB  

= -20V  

-1.0  

-1.0  

-600  

390  

I

EBO  

V =

 

-4V  

EB  

–

Collector-emitter saturation voltage  

DC current gain  

V

I =

 

-300mA, I

 

= -30mA  

C

–

CE(sat)  

B

h

FE  

V

= -3V, I

 

= -100mA  

82  

CE  

CE  

C

V

= -5V, I

 

= 20mA,  

E

f

Transition frequency  

Output capacitance  

–

–

200  

7.0  

–

–

MHz  

pF  

T

f = 100MHz  

V

CB  

= -10V, I

 

= 0A,  

E

C

ob  

f = 1MHz  

hFE values are calssified as follows :  

rank  

P

Q

R

–

–

–

h

FE  

82-180  

120-270  

180-390  

–

*1 Each terminal mounted on a reference land.  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

2/6  

20150730 – Rev.002  

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2SA1036K  

Datasheet  

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Electrical characteristic curves

(T =

 

25°C)  

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Fig.1 Grounded emitter propagation  

Fig.2 Grounded emitter output  

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characteristics (I)  

Fig.3 Grounded emitter output  

Fig.4 DC current gain vs. collector  

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characteristics (II)  

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current (I)  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

3/6  

20150730 – Rev.002  

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2SA1036K  

Datasheet  

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Electrical characteristic curves

(T =

 

25°C)  

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Fig.5 DC current gain vs. collector  

Fig.6 Collector-emitter saturation voltage  

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current (II)  

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vs. collector current (I)  

Fig.7 Collector-emitter saturation voltage  

Fig.8 Gain bandwidth product vs.  

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vs. collector current (II)  

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emitter current  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

4/6  

20150730 – Rev.002  

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2SA1036K  

Datasheet  

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Electrical characteristic curves

(T =

 

25°C)  

a

Fig.9 Collector output capacitance vs.  

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collector-base voltage  

Fig.10 Safe Operating Area  

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Emitter input capacitance vs.  

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emitter-base voltage  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

5/6  

20150730 – Rev.002  

2SA1036K  

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Datasheet  

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Dimensions  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

6/6  

20150730 – Rev.002