ROHM-Semicon-2SA1797T100Q

Power Transistor (

−

50V,

−

3A)  

2SA1797  

z

Features  

z

Dimensions

(Unit : mm)  

1) Low saturation voltage.  

MPT3  

V

CE (sat)

=

−

0.35V (Max.) at I

C

/ I

B

=

−

1A / 50mA.  

2) Excellent DC current gain characteristics.  

3) Complements the 2SC4672.  

4.5  

1.6  

1.5  

(1)  

(2)  

(3)  

z

Packaging specifications  

0.4  

0.5  

3.0  

0.4  

0.4  

Type  

2SA1797  

MPT3  

PQ  

1.5  

1.5  

(1)Base  

Package  

(2)Collector  

(3)Emitter  

h

FE  

∗

Marking  

Code  

AG  

T100  

1000  

Basic ordering unit (pieces)  

∗

Denotes h

FE  

z

Absolute maximum ratings

(

T

a

=25

°

C)  

Parameter  

Collector-base voltage  

Collector-emitter voltage  

Emitter-base voltage  

Symbol  

Limits  

Unit  

V

CBO  

V

CEO  

V

EBO  

−

50  

−

50  

−

6  

V

V

V

∗

1

2

−

3  

−

6  

A (DC)  

Collector current  

I

C

A (Pulse)  

0.5  

∗

Collector power  

dissipation  

2SA1797  

P

C

W

2

Junction temperature  

Storage temperature  

∗

1 Single

 

pulse, Pw

=

10ms  

Tj  

Tstg  

150  

°

C  

°

C  

−

55 to

+

150  

∗

2 When

 

mounted on a 40

+

40

+

0.7mm ceramic board.  

z

Electrical characteristics

(

T

a

=25

°

C)  

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Unit  

Conditions  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cutoff current  

BV

CBO  

−

50  

−

50  

−

6  

−

−

−

−

−

−

−

−

−

−

−

V

V

I

C

=−

50

µ

A  

=−

1mA  

BV

CEO  

BV

EBO  

I

I

C

V

E

=−

50

µ

A  

CB

=−

50V  

EB

=−

5V  

I

CBO  

−

0.1  

−

0.1  

−

0.35  

270  

µ

A  

µ

A  

V

V

V

Emitter cutoff current  

I

EBO  

∗

∗

∗

∗

Collector-emitter saturation voltage  

V

CE(sat)  

−

0.15  

−

I

C

/I

=−

1A/

−

50mA  

B

h

FE1  

FE2  

82  

−

V

CE

/I  

C

=−

2V/

−

0.5A  

=−

2V/

−

1.5A  

=

0.5A, f

=

100MHz  

CB

=−

10V

,

I

=

0A

,

f

=

1MHz  

DC current transfer ratio  

h

45  

−

−

−

200  

−

−

−

−

MHz  

V

V

V

CE

/I  

C

Transition frequency  

Output capacitance  

f

T

CE

=−

2V, I  

E

Cob  

36  

pF  

E

∗

Measured using pulse current  

2009.04 – Rev.C  

1/2  

c

○

2009 ROHM Co., Ltd. All rights reserved.  

2SA1797  

Data Sheet  

z

Electrical characteristic curves  

2.0  

5000  

−

10  

−

5  

V

CE

=

2V  

Ta

=

25

°

C  

V

CE

=

2V  

1.8  

2000  

1000  

500  

−

2  

−

1  

−

0.5  

1.6  

1.4  

°

C  

Ta

=

100  

1.2  

−

0.2  

−

0.1  

−

0.05  

200  

100  

50  

Ta

=

25

°

C  

1

Ta

=−

40

°

C  

800m  

600m  

400m  

−

0.02  

−

0.01  

−

5m  

20  

10  

5

200m  

0

−

2m  

−

1m  

0

1

2

3

4

5

6

7

8

9

10  

–

1m  

–

5m  

–

0.02  

–

0.1  

–

0.5  

–

2

–

5

–

10  

0

−

0.2

−

0.4

−

0.6

−

0.8

−

1.0

−

1.2

−

1.4  

–

2m  

–

0.01  

–

0.05  

–

0.2  

–

1  

COLLECTOR TO EMITTER VOLTAGE

: V

CE

(V)  

COLLECTOR CURRENT : I

C

(A)  

BASE TO EMITTER VOLTAGE

 

: V

BE

(V)  

Fig.1 Grounded EmitterOutput  

Characteristics  

Fig.3 DC Current Gain vs.  

Collector Current  

Fig.2 Grounded Emitter Propagation  

Characteristics  

–

1  

10  

10ms  

l

C

/l

B

=

20  

–

0.5  

0.2  

100ms  

1ms  

1

–

°

C  

Ta

=

100  

DC  

–

0.1  

Ta

=

25

°

C  

0.1  

Ta

=−

40

°

C  

–

0.05  

0.02  

–

0.01  

Ta

=

25

°

C  

Single non repetitive pulse  

Mounted on epoxy board  

–

0.01  

12mm

×

15mm

×

t

0.8mm  

–

1m  

–

5m  

–

0.02  

–

0.1  

–

0.5  

–

2

–

5

–

10  

0.001  

–

2m  

–

0.01  

–

0.05  

–

0.2  

–

1  

0.1  

1

10  

100  

COLLECTOR CURRENT : I  

C

(A)  

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)  

Fig.4 Collector-Emitter Saturation  

Voltage vs. Collector Current  

Fig.5 Safe Operating Area  

2009.04 – Rev.C  

2/2  

c

○

2009 ROHM Co., Ltd. All rights reserved.  

Notice  

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consent of ROHM Co.,Ltd.  

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The content specified herein is for the purpose of introducing ROHM’s products (hereinafter  

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which can be obtained from ROHM upon request.  

Examples of application circuits, circuit constants and any other information contained herein  

illustrate the standard usage and operations of the Products. The peripheral conditions must  

be taken into account when designing circuits for mass production.  

Great care was taken in ensuring the accuracy of the information specified in this document.  

However, should you incur any damage arising from any inaccuracy or misprint of such  

information, ROHM shall bear no responsibility for such damage.  

The technical information specified herein is intended only to show the typical functions of and  

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Support System  

© 2009

 

ROHM Co., Ltd. All rights reserved.  

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A