ROHM-Semicon-2SA1952TLQ

2SA1952  

Transistors  

High-speed Switching Transistor (

−

60

V

,

−

5A)  

2SA1952  

z

Features  

z

External dimensions

(Units : mm)  

1) High speed switching. (tf : Typ. 0.15

µ

s at I

C

= −

3A)  

2) Low V

CE(sat)

. (Typ.

−

0.2V at I

C

/I

B

= −

3/

−

0.15A)  

3) Wide SOA. (safe operating area)  

4) Complements the 2SC5103.  

2SA1952  

5.5  

1.5  

0.9  

C0.5  

z

Absolute maximum ratings

(

T

a =

2

5

°

C)  

Parameter  

Collector-base voltage  

Collector-emitter voltage  

Emitter-base voltage  

Symbol  

Limits  

−

100  

−

60  

−

5  

−

5  

Unit  

V

V

V

CBO  

V

CEO  

V

EBO  

0.8Min.  

1.5  

V

2.5  

A

A(Pulse)  

I

C

Collector current  

−

10  

9.5  

(1) Base(Gate)  

(2) Collector(Drain)  

(3) Emitter(Source)  

1

10  

W

W(Tc

=

25

°

C)  

Collector power dissipation  

P

C  

ROHM : CPT3  

EIAJ : SC-63  

Junction temperature  

Storage temperature  

Tj  

Tstg  

150  

−

55~

+

150  

°

C  

°

C  

z

Packaging specifications and h

FE  

Type  

Package  

h

FE  

Code  

Basic ordering unit (pieces)  

2SA1952  

CPT3  

Q

TL  

2500  

z

Electrical characteristics

(

T

a =

2

5

°

C)  

Parameter  

Typ.  

Conditions  

Symbol  

Min.  

Max.  

Unit  

−

−

−

−

−

−

−

−

−

−

−

−

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cutoff current  

BV

CBO  

BV

CEO  

BV

EBO  

−

100  

−

60  

−

5  

−

−

−

−

−

−

120  

−

V

V

V

µ

A  

µ

A  

V

V

V

V

−

MHz  

pF  

µ

s  

µ

s  

µ

s  

I

I

I

V

C

=

=

=

−

50

µ

A  

−

1mA  

−

50

µ

A  

C

E

I

CBO  

−

10  

−

10  

−

0.3  

−

0.5  

−

1.2  

−

1.5  

270  

−

CB  

EB  

=

=

=

=

=

=

−

100V  

−

5V  

−

3A/

−

0.15A  

−

4A/

−

0.2A  

−

3A/

−

0.15A  

−

4A/

−

0.2A  

I

EBO  

V

Emitter cutoff current  

I

I

I

I

C

/I  

/I  

/I  

/I  

B

V

CE(sat)  

BE(sat)  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

C

C

C

B

B

B

V

−

h

FE  

DC current

transfer ratio  

Transition frequency  

Output capacitance  

Turn-on time  

Storage time  

Fall time  

V

V

V

I

I

CE  

=

=

=

−

2V , I  

−

10V , I  

−

10V , I  

C

=

−

1A  

0.5A , f  

0A , f  

10

Ω  

−

0.15A  

CC

−

30V  

f

T

80  

130  

−

−

−

CE  

E

=

=

30MHz  

1MHz  

Cob  

ton  

tstg  

tf  

−

−

−

−

−

CB  

E

=

=

0.3  

1.5  

0.3  

C

=

=

−

3A , R  

L

=  

B1  

−

I

B2  

=

V