ROHM-Semicon-2SA2094GZTLQ

Medium power transistor (



60V,



2A)  

2SA2094  



Features  



Dimensions

(Unit : mm)  

1) High speed switching.  

(Tf : Typ. : 30ns

 

at I

C

= 2A)  

TSMT3  

2.8  

1.6  



2) Low saturation voltage, typically  







:

(Typ. 200mV

 

at I

C

= 1A,

 

I

B

= 0.1A)  

3) Strong discharge power for inductive load and  

capacitance load.  

4) Complements the 2SC5866  

(1) Base  

(2) Emitter  

(3) Collector  

0.3 0.6  

Each lead has same dimensions  

Abbreviated symbol : VP  



Applications  

Low frequency amplifier  

High speed switching  



Structure  

PNP epitaxial planar silicon transistor  



Packaging specifications  

Package  

Taping  

TL  

Code  

Type  

Basic ordering unit (pieces)  

3000  

2SA2094  



Absolute maximum ratings

(

T

a

=25



C)  

Parameter  

Collector-base voltage  

Symbol  

Limits  

−

60  

Unit  

V

CBO  

V

CEO  

V

EBO  

V

V

Collector-emitter voltage  

Emitter-base voltage  

−

60  

V

−

6  

DC  

I

C

A

−

2  

Collector current  

∗

1  

∗

2  

Pulsed  

I

CP  

A

−

4  

P

C

mW  

°

C  

°

C  

Power dissipation  

500  

Tj  

Junction temperature  

150  

Tstg  

Range of storage temperature  

−

55 to 150  

∗

1 Pw

=

10ms  

∗

2 Each terminal mounted on a recommended land  

2011.03 – Rev.A  

1/3  

c

○

2011 ROHM Co., Ltd. All rights reserved.  

2SA2094  

Data Sheet  



Electrical characteristics

(

T

a

=25



C)  

Parameter  

Symbol  

BV

CEO  

BV

CBO  

BV

EBO  

Min.  

−

60  

−

60  

−

6  

−

−

Typ.  

Max.  

−

−

−

−

1.0  

−

1.0  

Unit  

V

Condition  

= −

1mA  

= −

100

μ

A  

= −

100

μ

A  

CB

= −

40V  

EB

= −

4V  

Collector-emitter breakdown voltage  

Collector-base breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

−

−

−

−

−

I

I

I

C

C

V

V

E

I

CBO  

μ

A  

μ

A  

V

V

I

EBO  

Emitter cut-off current  

∗

1  

∗

1  

∗

1  

I

I

C

= −

1A  

V

CE (sat)  

−

500  

mV  

Collector-emitter saturation voltage  

DC current gain  

−

−

200  

B

= −

0.1A  

V

CE

= −

2V  

h

FE  

270  

−

120  

−

I

C

= −

100mA  

V

CE

= −

10V  

f

T

−

−

MHz  

pF  

Transition frequency  

−

−

300  

25  

I

E

=

100mA  

f

=

10MHz  

CB

= −

10V  

=

0mA  

f

=

1MHz  

V

Cob  

Corrector output capacitance  

I

E  

∗

2  

I

I

I

C

= −

2A  

Ton  

Tstg  

Tf  

−

−

−

ns  

ns  

ns  

Turn-on time  

Storage time  

Fall time  

−

−

−

25  

100  

30  

B

B

2

1

=

200mA  

= −

200mA  

V

CC

25V  

∗

1 Non repetitive pulse  

∗

2 See Switching charactaristics measurement circuits  



h

FE

RANK  

Q

120

−

270  



Electrical characteristic curves  

1000  

1000  

100  

10  

1000  

100  

10  

Ta

=

25

°

C  

V

CE

= −

2V  

Ta

=

25

°

C  

V

CC

= −

25V  

I

C

/ I

B

=

10 / 1  

Tstg  

V

CE

=

5V  

V

CE

=

3V  

V

CE

=

2V  

Ta

=

125

°

C  

Ta

=

25

°

C  

Ta

= −

40

°

C  

100  

Tf  

Ton  

10  

−

0.01  

1

1

−

0.1  

−

1  

−

10  

−

0.001  

−

0.01  

−

0.1  

−

1  

−

10  

−

0.001  

−

0.01  

−

0.1  

−

1  

−

10  

COLLECTOR CURRENT

 

: I  

C

(A)  

COLLECTOR CURRENT

 

: I

C

(A)  

COLLECTOR CURRENT

 

: I

C

(A)  

Fig.1 Switching Time  

Fig.2 DC Current Gain vs.  

Fig.3 DC Current Gain vs.  

Collector Current (

Ι

)  

Collector Current (

ΙΙ

)  

−

10  

−

10  

−

10  

−

1  

I

C

/ I  

B

=

10 / 1  

Ta

=

25

°

C  

I

C

/ I

B

=

10 / 1  

−

1  

−

0.1  

−

1  

−

0.1  

Ta

=

125

°

C  

Ta

=

25

°

C  

I

I

C

C

/ I  

/ I  

B

B

=

20 / 1  

=

10 / 1  

Ta

=

125

°

C  

Ta

=

25

°

C  

Ta

= −

40

°

C  

Ta

= −

40

°

C  

−

0.1  

−

0.01  

−

0.01  

−

0.01  

−

0.001  

−

0.01  

−

0.1  

−

1  

−

10  

−

0.001  

−

0.01  

−

0.1  

−

1  

−

10  

−

0.001  

−

0.01  

−

0.1  

−

1  

−

10  

COLLECTOR CURRENT : I  

C

(A)  

COLLECTOR CURRENT : I

C

(A)  

COLLECTOR CURRENT : I  

C

(A)  

Fig.4

Collector-Emitter Saturation  

Fig.5

Collector-Emitter Saturation  

Fig.6 Base-Emitter Saturation  

Voltage vs. Collecter Current  

Voltage vs. Collector Current (

Ι

)  

Voltage vs. Collector Current (

ΙΙ

)  

2011.03 – Rev.A  

2/3  

c

○

2011 ROHM Co., Ltd. All rights reserved.  

2SA2094  

Data Sheet  

1000  

100  

10  

1000  

100  

10  

−

10  

Ta

=

25

°

C  

CE

= −

10V  

Ta

=

25

°

C  

f

=

1MHz  

V

CE

= −

2V  

V

Ta

=

125

°

C  

−

1  

−

0.1  

Ta

=

25

°

C  

Ta

= −

40

°

C  

1

−

0.01  

1

−

0.1  

−

1  

−

10  

−

100  

0

−

0.5  

−

1  

−

1.5  

0.001  

0.01  

0.1  

1

10  

BASE TO COLLECTOR VOLTAGE : V

CB

(V)  

BASE TO EMITTER VOLTAGE : V

BE

(V)  

EMITTER CURRENT : I

E

(A)  

Fig.9

Collector Output Capacitance  

Fig.7 Grounded Emitter  

Fig.8 Transition Frequency  

Propagation Characteristics  



Switching characteristics measurement circuits  

R

L

=

12.5

Ω  

I

C

I

I

B

B

1

2

V

IN  

P

W

V

CC

−

25V  

P

W

50

μ

s  

DUTY CYCLE

≤

1%  

I

I

B

2

1

B

BASE CURRENT  

WAVEFORM  

Ton  

Tstg  

10%  

Tf  

90%  

I

C

COLLECTOR CURRENT  

WAVEFORM  

2011.03 – Rev.A  

3/3  

c

○

2011 ROHM Co., Ltd. All rights reserved.  

Notice  

N o t e s  

Thank you for your accessing to ROHM product informations.  

More detail product informations and catalogs are available, please contact us.  

ROHM Customer

 

Support System  

© 2011

 

ROHM Co., Ltd. All rights reserved.  

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A