ROHM-Semicon-2SAR293P5T100

2SAR293P5  

Middle Power Transistors (-30V / -1.0A)  

Datasheet  

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Outline  

Parameter  

Value  

MPT3  

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V

CEO  

-30V  

I

C

-1A  

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(SC-62)  

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Features  

1) Suitable for Middle Power Driver.  

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Inner circuit  

2) Complementary NPN Types : 2SCR293P5.  

3) Low V  

CE(sat)  

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V =-350mV(Max.).  

CE(sat)  

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(I /I =-500mA/-25mA)  

C B  

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Application  

LOW FREQUENC

Y

A

MPLIFIER, DRIVER  

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Packaging specifications  

Basic  

Package  

Taping Reel

 

size Tape

 

width  

Part No.  

Package  

ordering  

Marking  

ML  

size  

code  

(mm)  

(mm)  

unit.(pcs)  

2SAR293P5  

MPT3  

6595  

T100  

330  

16  

1000  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

1/6  

20150724 – Rev.001  

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2SAR293P5  

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Datasheet  

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Absolute maximum ratings

(T

a

= 25°C)  

Parameter  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Values  

Unit  

V

Collector-base voltage  

Collector-emitter voltage  

Emitter-base voltage  

-30  

-30  

V

-6  

V

-1  

-2  

A

Collector current  

Power dissipation  

*1  

I

CP  

A

*2  

P

D  

0.5  

W

W

℃

℃

*3  

P

D  

2.0  

T

j  

Junction temperature  

150  

T

stg  

Range of storage temperature  

-55 to +150  

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Electrical characteristics

(T

a

= 25°C)  

Values  

Parameter  

Symbol  

Conditions  

Unit  

Min.  

-30  

Typ.  

Max.  

–

Collector-base breakdown  

voltage  

Collector-emitter breakdown  

voltage  

BV

CBO  

BV

CEO  

I =

 

-10μA  

–

V

V

C

I =

 

-1mA  

-30  

–

–

C

BV

EBO  

I

CBO  

Emitter-base breakdown voltage  

Collector cut-off current  

Emitter cut-off current  

I =

 

-10μA  

-6  

–

–

V

nA  

nA  

mV  

–

E

V

CB  

= -30V  

–

–

-100  

-100  

-350  

680  

I

EBO  

V =

 

-6V  

EB  

–

–

–

-150  

–

*4  

Collector-emitter saturation voltage  

DC current gain  

I =

 

-500mA, I

 

= -25mA  

C

V

B

CE(sat)  

h

FE  

V

CE  

= -2V, I

 

= -100mA  

270  

C

V

= -2V, I

 

= 100mA,  

E

CE  

*4  

Transition frequency  

Output capacitance  

Turn-On time  

–

–

–

–

–

320  

7

–

–

–

–

–

MHz  

pF  

ns  

f

T

f = 100MHz  

V

CB  

= -10V, I

 

= 0A,  

E

C

ob  

t

on  

t

stg  

t

f  

f = 1MHz  

I =

 

-500mA,  

C

60  

I =

 

-25mA,  

B1  

I =

 

25mA,  

B2  

Storage time  

160  

50  

ns  

V

CC  

⋍

-5V,  

R =

 

10Ω  

See test circuit  

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Fall time  

ns  

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*1

ꢀ

Pw=10ms Sigle Pulse  

*2

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Each terminal mounted on a reference land.  

*3

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Mounted on a ceramic board(40×40×0.7 mm) .  

*4

ꢀ

Pulsed  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

2/6  

20150724 – Rev.001  

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2SAR293P5  

Datasheet  

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Electrical characteristic curves

(T =

 

25°C)  

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Fig.1 Grounded Emitter Propagation  

Fig.2 Typical Output Characteristics  

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Characteristics  

Fig.3 DC Current Gain vs. Collector  

Fig.4 DC Current Gain vs. Collector  

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Current(I)  

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Current(II)  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

3/6  

20150724 – Rev.001  

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2SAR293P5  

Datasheet  

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Electrical characteristic curves

(T =

 

25°C)  

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Fig.5 Collector-Emitter Saturation  

Fig.6 Collector-Emitter Saturation  

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Voltage vs. Collector Current(I)  

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Voltage vs. Collector Current(II)  

Fig.7 Base-Emitter Saturation Voltage  

Fig.8 Gain Bandwidth Product  

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vs. Collector Current  

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vs. Emitter Current  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

4/6  

20150724 – Rev.001  

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2SAR293P5  

Datasheet  

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Electrical characteristic curves

(T =

 

25°C)  

a

Fig.9 Emitter input capacitance  

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vs.Emitter-Base Voltage  

Collector output capacitance vs.  

Collector-Base Voltage  

Fig.10 Safe Operating Area  

SWITCHING TIME TEST CIRCUIT  

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© 2015 ROH

M

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o., Ltd. All rights reserved.  

5/6  

20150724 – Rev.001  

2SAR293P5  

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Datasheet  

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Dimensions  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

6/6  

20150724 – Rev.001