ROHM-Semicon-2SB1132T100R

Part #ROHM-Semicon-2SB1132T100R
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ROHM-Semicon-2SB1132T100R
Medium Power Transistor (
32V,

1A)  
2SB1132 / 2SA1515S / 2SB1237  
Features  
Dimensions
(Unit : mm)  
1) Low V

CE(sat).  

2SB1132  
2SA1515S  
4 0.2  
V

CE(sat)

=
0.2V(Typ.)  
(I

C

/ I
B
=
500mA /
50mA)  
2) Compliments 2SD1664 /  
2SD1858  
+
+
2 0.2  
−
−
+
0.2  
4.5  
−
0.1  
+
0.2  
−
0.1  
1.5  
+
1.6 0.1  
−
+
0.15  
0.45  
−
0.05  
(1) (2)
 
(3)  
+
0.1  
0.4  
Structure  
−
0.05  
+
0.5 0.1  
−
+
0.4 0.1  
+
1.5 0.1  
−
0.4 0.1  
+
1.5 0.1  
−
−
Epitaxial planar type  
PNP silicon transistor  
+
0.15  
−
0.05  
+
0.4  
0.45  
2.5  
+
3.0 0.2  
−
0.5  
−
0.1  
5
(1) (2) (3)  
(1) Base  
(1) Emitter  
(2) Collector  
(3) Base  
ROHM : MPT3  
EIAJ : SC-62  
(2) Collector  
(3) Emitter  
ROHM : SPT  
EIAJ : SC-72  
Abbreviated symbol: BA  
∗
2SB1237  
+
2.5 0.2  
−
+
6.8 0.2  
−
0.65Max.  
+
0.5 0.1  
−
(1) (2)  
(3)  
2.54  
2.54  
+
0.45 0.1  
−
1.05  
(1) Emitter  
ROHM :
ATV  
(2) Collector  
(3) Base  
Denotes h
FE  
∗
2009.12 – Rev.C  
1/4  
c
○
2009 ROHM Co., Ltd. All rights reserved.  

2SB1132 / 2SA1515S / 2SB1237  
Data Sheet  
Absolute maximum ratings
(
T
a
=25
C)  
Parameter  
Symbol  
Limits  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
CBO  
V
CEO  
V
EBO  
−
40  
V
V
−
32  
−
5  
V
−
1  
A(DC)  
A(Pulse)  
I
C
Collector current  
1
∗
2
∗
3
∗
−
2  
0.5  
2SB1132  
2
Collector power  
dissipation  
W
P
C
2SA1515S  
2SB1237  
0.3  
1
Junction temperature  
Storage temperature  
1 Single
 
pulse, Pw=100ms  
C
C
Tj  
150  
Tstg  
−
55 to
+
150  
∗
+
+
2 When
 
mounted on a 40
 
40 0.7
 
mm ceramic board.  
∗
∗
3 Printed
 
circuit board, 1.7 mm thick, collector copper plating 100mm

2

or larger.  
Electrical characteristics
(
T
a
=25
C)  
Parameter  
Symbol Min.  
Typ.  
−
Max.  
−
Unit  
V
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BV
CBO  
BV
CEO  
BV
EBO  
−
40  
−
32  
−
5  
−
I
I
I
C
=
−
50
μ
A  
=
−
1mA  
−
−
V
C
−
−
V
E
=
−
50
μ
A  
CB
=
−
20V  
EB
=
−
4V  
I
CBO  
EBO  
CE(sat)  
−
−
0.5  
−
0.5  
−
0.5  
390  
390  
−
μ
A  
μ
A  
V
V
V
Emitter cutoff current  
I
−
−
Collector-emitter saturation voltage  
V
−
−
0.2  
−
I
C
/I  
B
=
−
500mA/  
−
50mA  
∗
∗
2SB1132, 2SB1237  
DC current  
transfer ratio  
2SA1515S  
120  
120  
−
−
h
FE  
V
CE
=
−
3V, I  
C
=
−
0.1A  
−
−
Transition frequency  
f
T
150  
20  
MHz  
pF  
V
V
CE
=
−
5V, I  
E
=  
50mA, f  
=
30MHz  
Output capacitance  
Cob  
−
30  
CB
=
−
10V, I  
E
=  
0A, f
 
1MHz  
=
Measured using pulse current.  
∗
Packaging specifications and h

FE  

Package  
Code  
Taping  
T100  
TP  
5000  
−
TU2  
2500  
−
h
FE  
1000  
Type  
Basic ordering unit (pieces)  
2SB1132  
2SA1515S  
2SB1237  
QR  
QR  
QR  
−
−
−
−
h
FE
values are classified as follows :  
Item  
Q
R
h
FE  
120 to 270
 
180 to 390  
2009.12 – Rev.C  
2/4  
c
○
2009 ROHM Co., Ltd. All rights reserved.  

2SB1132 / 2SA1515S / 2SB1237  
Data Sheet  
Electrical characteristics curves  
-500  
−
−
−
−
−
500  
400  
300  
200  
−
3.0  
−
3.5  
−
4.0  
−
4.5  
−
5.0  
Ta
=
25 C  
Ta
=
25 C  
−
2.0  
V
CE
=
−
6V  
−
2.5  
-200  
1000  
500  
-100 Ta  
=
100 C  
25 C  
55 C  
−
1.5  
−
1.0  
−
0.5  
−
-50  
V

CE

= −
3V  
−
1V  
-20  
200  
100  
50  
-10  
-5  
100  
0
-2  
-1  
I

B  

=
0mA  
−
50  
−
100
−
200
−
50
0
−
1000  
−
1
−
2  
−
5
−
10
−
20  
0
−
0.4  
−
0.8  
−
1.2  
−
1.6  
−
2.0  
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6  
BASE TO EMITTER VOLTAGE
 
: V
BE
(V)  
COLLECTOR TO EMITTER VOLTAGE
 
: V

CE

(V)  
COLLECTOR CURRENT
 
: I

C

(mA)  
Fig.3 DC
 
current gain vs.  
Fig.1 Grounded
 
emitter  
propagation characteristics  
Fig.2 Grounded
 
emitter output  
characteristics  
collector current
(
Ι
)  
−
1.0  
−
1
Ta
=
25 C  
V

CE

= −
3V  
Ta
=
25 C  
I

C

/I

B

=
10  
−
0.5  
1000  
500  
−
0.8  
−
0.6  
−
0.4  
−
0.2  
0
−
0.2  
0.1  
Ta
=
100 C  
−
l

C

= −
500mA  
25 C  
200  
−
0.05  
−
55 C  
100  
50  
−
−
0.02  
l

C

= −
300mA  
−
2  

0.01

1  
−
2  
−
5  
−
10  
−
20  
−
50  
−
100  
−
200  
−
500
−
100
0
−
2000  
−
1
−
2  
−
5
−
10
−
20  
−
50
−
100
−
200
−
50
0
−
1000  
−
−
1  
−
5
−
10  
−
20  
−
50
−
100  
BASE CURRENT
 
: I
 
(
mA
)  
B
COLLECTOR CURRENT
 
: I

C

(mA)  
COLLECTOR CURRENT :  
I
C
(mA)  
Fig.4 DC
 
current gain vs.  
Fig.5 Collector-emitter
 
saturation  
Fig.6 Collector-emitter
 
saturation  
voltage vs. base current  
collector current
(
ΙΙ
)  
voltage vs. collector current  
100  
−
5
Ta
=
25 C  
V

CE

= −
5V  
Ta
=
25 C  
f
=
1MHz  
I

E

=
0A  
−
2
1
200  
100  
50  
−
50  
−
0.5  
−
0.2  
0.1  
−
20  
10  
−
0.05  
−
0.02  
0.01  
Ta
=
25 C  
∗
Single pulse  
20  
−
1  
−
−
2  
−
5  
−
10
−
20  
−
50
−
100  
−
0.5  
−
1
−
2
−
5
−
10  
−
20  
0
−
0.2
−
0.5
−
1
−
2  
−
5
−
10
−
20
−
50  
EMITTER CURRENT
 
: I  
E
(mA)  
COLLECTOR TO BASE VOLTAGE
 
: V

CB  

(
V
)  
COLLECTOR TO EMITTER VOLTAGE
 
: V

CE

(
V
)  
Fig.7 Gain
 
bandwidth product  
vs. emitter current  
Fig.8 Collector
 
output capacitance  
vs.collector-base voltage  
Fig.9 Safe
 
operation area  
(2SB1132)  
2009.12 – Rev.C  
3/4  
c
○
2009 ROHM Co., Ltd. All rights reserved.  

2SB1132 / 2SA1515S / 2SB1237  
Data Sheet  
1000  
−
5  
−
2  
200  
100  
50  
Ta
=
25 C  
Ta
=
25 C  
Ta
=
25 C  
∗
Single pulse  
∗
C Max  
.
I
100  
10  
−
1  
−
0.5  
P

W

=
10ms

∗  

P

W  

=
100
ms

∗  

20  
10  
5
−
0.2  
0.1  
DC  
−
−
0.05  
1
−
0.02  
0.01  
−
0.1  
0.001  
2
−
0.1  
−
0.2  
−
0.5
−
1
−
2  
−
5
−
10
−
20
−
50  
0.01  
0.1  
10  
100 1000  
0.01  
0.1  
1
10  
100  
1000  
1
TIME : t
(s)  
COLLECTOR TO EMITTER VOLTAGE
 
: V

CE

(V)  
TIME : t
(s)  
Fig.10 Transient
 
thermal resistance  
(2SB1132)  
Fig.11 Safe
 
operation area  
(2SB1237)  
Fig.12 Transient
 
thermal resistance  
(2SB1237)  
2009.12 – Rev.C  
4/4  
c
○
2009 ROHM Co., Ltd. All rights reserved.  

Notice  
N o t e s  
No copying or reproduction of this document, in part or in whole, is permitted without the  
consent of ROHM Co.,Ltd.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM’s products (hereinafter  
“Products”). If you wish to use any such Product, please be sure to refer to the specifications,  
which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contained herein  
illustrate the standard usage and operations of the Products. The peripheral conditions must  
be taken into account when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document.  
However, should you incur any damage arising from any inaccuracy or misprint of such  
information, ROHM shall bear no responsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or  
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and  
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the  
use of such technical information.  
The Products specified in this document are intended to be used with general-use electronic  
equipment or devices (such as audio visual equipment, office-automation equipment, commu-  
nication devices, electronic appliances and amusement devices).  
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While ROHM always makes efforts to enhance the quality and reliability of its Products, a  
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Please be sure to implement in your equipment using the Products safety measures to guard  
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may result in a direct threat to human life or create a risk of human injury (such as a medical  
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More detail product informations and catalogs are available, please contact us.  
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© 2009
 
ROHM Co., Ltd. All rights reserved.  
R0039  
A