ROHM-Semicon-2SB1132T100R
| Part # | ROHM-Semicon-2SB1132T100R |
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Medium Power Transistor (
32V,
1A)
2SB1132 / 2SA1515S / 2SB1237
Features
Dimensions
(Unit : mm)
1) Low V
CE(sat).
2SB1132
2SA1515S
4 0.2
V
CE(sat)
=
0.2V(Typ.)
(I
C
/ I
B
=
500mA /
50mA)
2) Compliments 2SD1664 /
2SD1858
+
+
2 0.2
−
−
+
0.2
4.5
−
0.1
+
0.2
−
0.1
1.5
+
1.6 0.1
−
+
0.15
0.45
−
0.05
(1) (2)
(3)
+
0.1
0.4
Structure
−
0.05
+
0.5 0.1
−
+
0.4 0.1
+
1.5 0.1
−
0.4 0.1
+
1.5 0.1
−
−
Epitaxial planar type
PNP silicon transistor
+
0.15
−
0.05
+
0.4
0.45
2.5
+
3.0 0.2
−
0.5
−
0.1
5
(1) (2) (3)
(1) Base
(1) Emitter
(2) Collector
(3) Base
ROHM : MPT3
EIAJ : SC-62
(2) Collector
(3) Emitter
ROHM : SPT
EIAJ : SC-72
Abbreviated symbol: BA
∗
2SB1237
+
2.5 0.2
−
+
6.8 0.2
−
0.65Max.
+
0.5 0.1
−
(1) (2)
(3)
2.54
2.54
+
0.45 0.1
−
1.05
(1) Emitter
ROHM :
ATV
(2) Collector
(3) Base
Denotes h
FE
∗
2009.12 – Rev.C
1/4
c
○
2009 ROHM Co., Ltd. All rights reserved.
2SB1132 / 2SA1515S / 2SB1237
Data Sheet
Absolute maximum ratings
(
T
a
=25
C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
CBO
V
CEO
V
EBO
−
40
V
V
−
32
−
5
V
−
1
A(DC)
A(Pulse)
I
C
Collector current
1
∗
2
∗
3
∗
−
2
0.5
2SB1132
2
Collector power
dissipation
W
P
C
2SA1515S
2SB1237
0.3
1
Junction temperature
Storage temperature
1 Single
pulse, Pw=100ms
C
C
Tj
150
Tstg
−
55 to
+
150
∗
+
+
2 When
mounted on a 40
40 0.7
mm ceramic board.
∗
∗
3 Printed
circuit board, 1.7 mm thick, collector copper plating 100mm
2
or larger.
Electrical characteristics
(
T
a
=25
C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BV
CBO
BV
CEO
BV
EBO
−
40
−
32
−
5
−
I
I
I
C
=
−
50
μ
A
=
−
1mA
−
−
V
C
−
−
V
E
=
−
50
μ
A
CB
=
−
20V
EB
=
−
4V
I
CBO
EBO
CE(sat)
−
−
0.5
−
0.5
−
0.5
390
390
−
μ
A
μ
A
V
V
V
Emitter cutoff current
I
−
−
Collector-emitter saturation voltage
V
−
−
0.2
−
I
C
/I
B
=
−
500mA/
−
50mA
∗
∗
2SB1132, 2SB1237
DC current
transfer ratio
2SA1515S
120
120
−
−
h
FE
V
CE
=
−
3V, I
C
=
−
0.1A
−
−
Transition frequency
f
T
150
20
MHz
pF
V
V
CE
=
−
5V, I
E
=
50mA, f
=
30MHz
Output capacitance
Cob
−
30
CB
=
−
10V, I
E
=
0A, f
1MHz
=
Measured using pulse current.
∗
Packaging specifications and h
FE
Package
Code
Taping
T100
TP
5000
−
TU2
2500
−
h
FE
1000
Type
Basic ordering unit (pieces)
2SB1132
2SA1515S
2SB1237
QR
QR
QR
−
−
−
−
h
FE
values are classified as follows :
Item
Q
R
h
FE
120 to 270
180 to 390
2009.12 – Rev.C
2/4
c
○
2009 ROHM Co., Ltd. All rights reserved.
2SB1132 / 2SA1515S / 2SB1237
Data Sheet
Electrical characteristics curves
-500
−
−
−
−
−
500
400
300
200
−
3.0
−
3.5
−
4.0
−
4.5
−
5.0
Ta
=
25 C
Ta
=
25 C
−
2.0
V
CE
=
−
6V
−
2.5
-200
1000
500
-100 Ta
=
100 C
25 C
55 C
−
1.5
−
1.0
−
0.5
−
-50
V
CE
= −
3V
−
1V
-20
200
100
50
-10
-5
100
0
-2
-1
I
B
=
0mA
−
50
−
100
−
200
−
50
0
−
1000
−
1
−
2
−
5
−
10
−
20
0
−
0.4
−
0.8
−
1.2
−
1.6
−
2.0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE TO EMITTER VOLTAGE
: V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE
: V
CE
(V)
COLLECTOR CURRENT
: I
C
(mA)
Fig.3 DC
current gain vs.
Fig.1 Grounded
emitter
propagation characteristics
Fig.2 Grounded
emitter output
characteristics
collector current
(
Ι
)
−
1.0
−
1
Ta
=
25 C
V
CE
= −
3V
Ta
=
25 C
I
C
/I
B
=
10
−
0.5
1000
500
−
0.8
−
0.6
−
0.4
−
0.2
0
−
0.2
0.1
Ta
=
100 C
−
l
C
= −
500mA
25 C
200
−
0.05
−
55 C
100
50
−
−
0.02
l
C
= −
300mA
−
2
0.01
1
−
2
−
5
−
10
−
20
−
50
−
100
−
200
−
500
−
100
0
−
2000
−
1
−
2
−
5
−
10
−
20
−
50
−
100
−
200
−
50
0
−
1000
−
−
1
−
5
−
10
−
20
−
50
−
100
BASE CURRENT
: I
(
mA
)
B
COLLECTOR CURRENT
: I
C
(mA)
COLLECTOR CURRENT :
I
C
(mA)
Fig.4 DC
current gain vs.
Fig.5 Collector-emitter
saturation
Fig.6 Collector-emitter
saturation
voltage vs. base current
collector current
(
ΙΙ
)
voltage vs. collector current
100
−
5
Ta
=
25 C
V
CE
= −
5V
Ta
=
25 C
f
=
1MHz
I
E
=
0A
−
2
1
200
100
50
−
50
−
0.5
−
0.2
0.1
−
20
10
−
0.05
−
0.02
0.01
Ta
=
25 C
∗
Single pulse
20
−
1
−
−
2
−
5
−
10
−
20
−
50
−
100
−
0.5
−
1
−
2
−
5
−
10
−
20
0
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
EMITTER CURRENT
: I
E
(mA)
COLLECTOR TO BASE VOLTAGE
: V
CB
(
V
)
COLLECTOR TO EMITTER VOLTAGE
: V
CE
(
V
)
Fig.7 Gain
bandwidth product
vs. emitter current
Fig.8 Collector
output capacitance
vs.collector-base voltage
Fig.9 Safe
operation area
(2SB1132)
2009.12 – Rev.C
3/4
c
○
2009 ROHM Co., Ltd. All rights reserved.
2SB1132 / 2SA1515S / 2SB1237
Data Sheet
1000
−
5
−
2
200
100
50
Ta
=
25 C
Ta
=
25 C
Ta
=
25 C
∗
Single pulse
∗
C Max
.
I
100
10
−
1
−
0.5
P
W
=
10ms
∗
P
W
=
100
ms
∗
20
10
5
−
0.2
0.1
DC
−
−
0.05
1
−
0.02
0.01
−
0.1
0.001
2
−
0.1
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
0.01
0.1
10
100 1000
0.01
0.1
1
10
100
1000
1
TIME : t
(s)
COLLECTOR TO EMITTER VOLTAGE
: V
CE
(V)
TIME : t
(s)
Fig.10 Transient
thermal resistance
(2SB1132)
Fig.11 Safe
operation area
(2SB1237)
Fig.12 Transient
thermal resistance
(2SB1237)
2009.12 – Rev.C
4/4
c
○
2009 ROHM Co., Ltd. All rights reserved.
Notice
N o t e s
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consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM’s products (hereinafter
“Products”). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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may result in a direct threat to human life or create a risk of human injury (such as a medical
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Support System
© 2009
ROHM Co., Ltd. All rights reserved.
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