ROHM-Semicon-2SB1182TLQ
| Part # | ROHM-Semicon-2SB1182TLQ |
Download  | ROHM-Semicon-2SB1182TLQ |
Medium power transistor (
32
V
,
2A)
2SB1182 / 2SB1240
Features
Dimensions
(Unit : mm)
1) Low V
CE(sat)
.
2SB1182
2SB1240
V
CE(sat)
=
0.5V (Typ.)
(I
C
/I
B
=
2A /
0.2A)
2) Complements 2SD1758 / 2SD1862.
2.5 0.2
6.8 0.2
+
0.2
2.3
6.5 0.2
−
0.1
C0.5
+
0.2
5.1
0.5 0.1
−
0.1
0.65Max.
0.65 0.1
0.75
Structure
Epitaxial planar type
PNP silicon transistor
0.9
0.5 0.1
0.55 0.1
1.0 0.2
2.3 0.2
2.3 0.2
(1) (2)
(3)
2.54
2.54
1.05
0.45 0.1
(1) (2) (3)
(1) Base
(1) Emitter
(2) Collector
(3) Base
ROHM : CPT3
EIAJ : SC-63
(2) Collector
(3) Emitter
ROHM :
ATV
Absolute maximum ratings
(
T
a
=25
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
V
CBO
V
CEO
V
EBO
−
40
V
V
−
32
−
5
V
−
2
A(DC)
A (Pulse)
I
C
Collector current
1
−
3
∗
W (Tc
=
25
°
C
)
2SB1182
2SB1240
10
1
Collector power
dissipation
P
C
W
2
∗
Junction temperature
Storage temperature
1 Single
pulse, Pw
=
100ms
Tj
150
°
C
°
C
Tstg
−
55 to 150
∗
∗
2 Printed
circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
Electrical characteristics
(
T
a
=25
C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BV
CBO
BV
CEO
BV
EBO
−
40
−
32
−
5
−
I
C
= −
50
μ
A
−
−
V
I
I
C
= −
1mA
= −
50
μ
A
−
−
V
E
I
CBO
EBO
CE(sat)
FE
−
−
1
−
1
−
0.8
390
−
μ
μ
A
A
V
V
CB
= −
20V
EB
= −
4V
Emitter cutoff current
I
−
−
Collector-emitter saturation voltage
V
−
V
I
C
/I
= −
2A/
−
0.2A
B
−
0.5
−
∗
∗
DC current transfer ratio
Transition frequency
Output capacitance
h
120
−
−
V
V
V
CE
= −
3V, I
C
= −
0.5A
=
0.5A, f
=
100MHz
=
0A, f
=
1MHz
f
T
100
50
MHz
pF
CE
= −
5V, I
E
Cob
−
−
CB
= −
10V, I
E
Measured using pulse current.
∗
2010.04 – Rev.C
1/3
c
○
2010 ROHM Co., Ltd. All rights reserved.
2SB1182 / 2SB1240
Data Sheet
Packaging specifications and h
FE
Package
Code
Taping
TL
TV2
2500
−
Type
h
FE
Basic ordering unit (pieces)
2500
2SB1182
2SB1240
QR
QR
−
h
FE
values are classified as follows :
Item
Q
R
h
FE
120 to 270
180 to 390
Electrical characteristic curves
−
−
−
−
−
0.5
V
CE
= −
3V
Ta
=
25
°
C
Ta
=
25
°
C
500
Ta
=
100
°
C
25
°
C
−
40
°
C
−
1000
V
CE
= −
6V
0.4
0.3
0.2
−
3V
−
500
−
1V
200
100
50
−
200
100
−
−
50
−
20
10
−
−
5
0.1
−
−
2
1
I
=
0A
1.6
B
0
20
0
−
0.4
−
0.8
−
1.2
−
−
2
0
−
0.2
−
0.4
−
0.6
−
0.8
−
1.0
−
1.2
−
1.4
−
1.6
−
1.8
−
2.0
−
2.2
−
5
−
10
−
20
−
50
−
100
−
200
−
500
−
1
0
00
−
2000
BASE TO EMITTER VOLTAGE
: V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE
: V
CE
(V)
COLLECTOR CURRENT
: I
C
(mA)
Fig.1 Grounded
emitter propagation
characteristics
Fig.2 Grounded
emitter output
characteristics
Fig.3 DC
current gain vs.
collector curren (
)
V
CE
= −
3V
500
200
Ta
=
25
°
C
l
C
/l
B
=
10
−
500
−
500
Ta
=
100
°
C
25
°
C
−
25
°
C
−
200
100
−
−
200
100
100
50
Ta
=
100
°
C
25
°
C
−
I
C
/I
B
=
50
−
40
°
C
−
50
20
−
50
20
10
−
20
−
5
−
10
−
20
−
50
−
100
−
200
−
500
−
1
0
00
−
2000
−
5
−
10
−
20
−
50
−
100
−
200
−
500
−
1000
−
2000
−
5
−
10
−
20
−
50
−
100
−
200
−
500
−
1000
−
2000
COLLECTOR CURRENT
: I
C
(mA)
COLLECTOR CURRENT
: I
(mA)
C
COLLECTOR CURRENT
: I
(mA)
C
Fig.4 DC
current gain vs.
collector current (
Fig.5 Collector-emitter
saturation
voltage vs. collector current (
Fig.6 Collector-emitter
saturation
voltage vs. collector current (
)
)
)
Ta
=
25
°
C
Ta
=
25
°
C
500
Ta
=
25
°
C
1MHz
0A
0A
300
200
V
CE
= −
5V
Cib
f
I
I
=
E
=
−
1
C
=
I
C
/I
B
=
10
100
50
200
100
50
−
0.5
Cob
−
0.2
0.1
20
10
−
−
0.05
5
10
20
50
100 200
500
1
0
00
2000
−
5
−
10
−
20
−
50
−
100
−
200
−
500
−
1
0
00
−
2000
−
0.5
−
1
−
2
−
5
−
10
−
20
−
30
EMITTER CURRENT
: I
(mA)
E
COLLETOR CURRENT
: I
(mA)
C
COLLECTOR TO BASE VOLTAGE
: V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.8 Gain
bandwidth product vs.
emitter current
Fig.7 Base-emitter
saturation voltage
vs. collector current
Fig.9 Collector
output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
2010.04 – Rev.C
2/3
c
○
2010 ROHM Co., Ltd. All rights reserved.
2SB1182 / 2SB1240
Data Sheet
−
5
I
C Max
(Pulse)
.
P
W
=500
μ
s
−
−
2
1
DC
−
0.5
P
W
=1ms
100
ms
P
W
=
−
0.2
0.1
−
−
0.05
Ta=25
°
C
∗
Single
−
−
0.02
0.01
nonrepetitive
pulse
−
0.1
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
COLLECTOR TO EMITTER VOLTAGE
:
V
CE
(V)
Fig.10 Safe
operation area
(2SB1182)
2010.04 – Rev.C
3/3
c
○
2010 ROHM Co., Ltd. All rights reserved.
Notice
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The content specified herein is for the purpose of introducing ROHM’s products (hereinafter
“Products”). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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use of such technical information.
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equipment or devices (such as audio visual equipment, office-automation equipment, commu-
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© 2010
ROHM Co., Ltd. All rights reserved.
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