ROHM-Semicon-2SB1184TLR
| Part # | ROHM-Semicon-2SB1184TLR |
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Power Transistor (-60V, -3A)
2SB1184 / 2SB1243
Features
Dimensions
(Unit : mm)
1) Low
V
CE(sat)
.
2SB1184
2SB1243
V
CE(sat)
= -0.5V (Typ.)
(I
C
/I
B
= -2A / -0.2A)
2) Complements
the 2SD1760 / 2SD1864.
2.5 0.2
+
0.2
−
0.1
6.8 0.2
2.3
6.5 0.2
C0.5
+
0.2
5.1
0.5 0.1
−
0.1
Structure
Epitaxial planar type
PNP silicon transistor
0.65Max.
0.65 0.1
0.75
0.9
0.55 0.1
1.0 0.2
0.5 0.1
2.3 0.2
2.3 0.2
(1) (2) (3)
(1) (2)
2.54
(3)
2.54
1.05
0.45 0.1
(1) Base
(2) Collector
(3) Emitter
(1) Emitter
(2) Collector
(3) Base
ROHM : CPT3
EIAJ : SC-63
ROHM :
ATV
Absolute maximum ratings
(
T
a
=25
C)
Parameter
Symbol
Limits
−
60
−
50
−
5
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
CBO
V
CEO
V
EBO
V
V
I
C
−
3
A (DC)
W
1
15
1
Collector power
dissipation
2SB1184
2SB1243
W (T
=
25
°
C)
C
P
C
∗
1
W
Tj
150
°
C
°
C
Junction temperature
Storage temperature
Tstg
−
55 to 150
∗
1 Printed
circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
Electrical characteristics
(
T
a
=25
C)
Parameter
Symbol Min.
Typ.
−
Max.
Unit
Conditions
−
60
−
50
−
5
−
I
I
I
C
= −
50
μ
A
= −
1mA
Collector-base breakdown voltage
BV
CBO
−
−
V
V
C
Collector-emitter breakdown voltage
BV
CEO
−
E
= −
50
μ
A
CB
= −
40V
EB
= −
4V
Emitter-base breakdown voltage
Collector cutoff current
BV
EBO
−
−
V
−
1
−
1
−
1
390
μ
A
μ
A
V
V
V
I
CBO
EBO
CE(sat)
FE
−
Emitter cutoff current
I
−
−
I
C
/I
B
= −
2A/
−
0.2A
Collector-emitter saturation voltage
DC current transfer ratio
V
−
−
∗
∗
V
V
V
CE
= −
3V, I
C
= −
0.5A
=
0.5A, f
=
30MHz
=
0A, f
=
1MHz
h
120
−
−
CE
= −
5V, I
E
f
T
−
−
70
50
−
−
MHz
pF
Transition frequency
Output capacitance
CB
= −
10V, I
E
Cob
∗
Measured using pulse current.
2010.02 – Rev.C
1/3
c
○
2010 ROHM Co., Ltd. All rights reserved.
2SB1184 / 2SB1243
Data Sheet
Packaging specifications and h
FE
Taping
Package
Code
TL
TV2
2500
−
h
FE
2500
Basic ordering unit (pieces)
Type
2SB1184
2SB1243
QR
QR
−
h
FE
values are classified as follows :
Item
Q
R
h
FE
120 to 270
180 to 390
Electrical characteristic curves
−
3.0
−
2.5
−
2.0
−
1.5
−
1.0
−
0.5
−
3.0
−
10
−
50mA
Tc
=
25
°
C
−
20mA
Tc=25
°
C
V
CE
= −
3V
−
45mA
−
40mA
−
35mA
−
50mA
−
45mA
−
40mA
−
35mA
−
30mA
−
25mA
−
20mA
−
5
−
2.5
−
2.0
−
1.5
−
1.0
−
30mA
−
25mA
−
2
−
1
−
15mA
Ta
=
100
°
C
25
°
C
−
15mA
−
0.5
-25
°
C
−
10mA
−
5mA
−
10mA
−
0.2
−
0.1
−
0.05
I
=−
5mA
B
−
0.5
P
C
=
15W
−
40
−
0.02
−
0.01
I
B
=
0mA
−
4
I
B
=
0mA
0
0
0
0
−
1
−
2
−
3
−
5
−
10
−
20
−
30
−
50
0
−
0.
2
−
0.
4
−
0.
6
−
0.
8
−
1.
0
−
1.
2
−
1.
4
−
1.
6
−
1.8
COLLECTOR TO EMITTER VOLTAGE
: V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE
: V
CE
(V)
BASE TO EMITTER VOLTAGE
: V
BE
(V)
Fig.1 Grounded
emitter
propagation characteristics
Fig.2 Grounded
emitter output
Fig.3 Grounded
emitter output
characteristics (
)
characteristics (
)
1000
500
1k
−
10
−
5
V
CE
= −
3V
Ta
=
25
°
C
Ta
=
25
°
C
500
Ta
=
100
°
C
25
°
C
−
25
°
C
200
100
50
200
100
50
−
2
−
1
V
CE
=
−
5V
−
0.5
−
3V
20
10
5
−
0.2
−
0.1
20
10
5
I
C
/I
B
=
50/1
−
0.05
20/1
10/1
2
1
2
1
−
0.02
−
0.01
−
0
.0
1
−
0
.02
−
0
.05
−
0
.
1
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
0
.0
1
−
0.02
−
0.0
5
−
0.1
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
0
.0
1
−
0.02
−
0.0
5
−
0.1
−
0.2
−
0.5
−
1
−
2
COLLECTOR CURRENT
: I
−
5
−
10
(A)
C
COLLECTOR CURRENT
: I
C
(A)
COLLECTOR CURRENT
: I
C
(A)
Fig.4 DC
current gain vs.
collector current (
Fig.5 DC
current gain vs.
collector current (
Fig.6 Collector-emitter
saturation
voltage vs.collector current
)
)
1000
500
1000
−
10
Ta
=
25
°
C
f
=
1MHz
Ta
=
25
°
C
CE
= −
5V
l
C
/l
B
=
10
V
500
200
−
5
I
=
0A
E
Ta
= −
25
°
C
25
°
C
200
100
−
2
−
1
V
BE(sat)
100
°
C
100
50
−
0.5
50
20
10
5
20
10
−
0.2
Ta
=
100
°
C
25
°
C
−
25
°
C
−
0.1
−
0.05
5
V
CE(sat)
2
1
2
1
1
−
0.02
−
0.01
20
50 100 200
5001000
EMITTER CURRENT
: I
(mA)
−
0.1
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
−
100
2
5
10
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
0.01
−
0.02
−
0.05
−
0.1
E
COLLECTOR TO BASE VOLTAGE
: V
CB
(V)
COLLECTOR CURRENT
: I
C
(A)
Fig.8 Gain
bandwidth product vs.
emitter current
Fig.9 Collector
output capacitance vs.
collector base voltage
Fig.7 Collector-emitter
saturation voltage
vs. collector current
Base-emitter saturation voltage vs.
collector current
2010.02 – Rev.C
2/3
c
○
2010 ROHM Co., Ltd. All rights reserved.
2SB1184 / 2SB1243
Data Sheet
-10.0
−
10.0
−
5.0
I
C Max
. (Pulse)
∗
Ta
=
25
°
C
∗
Single
nonrepetitive
pulse
−
2.0
−
1.0
−
0.5
D
C
C
−
0.2
−
0.1
−
0.05
−
0.02
−
0.01
−
0.
1
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
−
100
−
50
COLLECTOR TO EMITTER VO
L
TAGE
:
V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE
: V
CE
(V)
Fig.11 Safe
operation area
(2SB1243)
Safe operation area
(2SB1184)
Fig.10
2010.02 – Rev.C
3/3
c
○
2010 ROHM Co., Ltd. All rights reserved.
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The content specified herein is for the purpose of introducing ROHM’s products (hereinafter
“Products”). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
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© 2010
ROHM Co., Ltd. All rights reserved.
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