ROHM-Semicon-2SB1189T100Q
| Part # | ROHM-Semicon-2SB1189T100Q |
| Download | ROHM-Semicon-2SB1189T100Q |
Medium power transistor(
80V,
0.7A)
2SB1189 / 2SB1238
Features
Dimensions
(Unit : mm)
1) High breakdown voltage, BV
CEO
=
80
V
,
a
nd
high current, I
C
=
0.7A.
2) Complements the 2SD1767 / 2SD1859.
2SB1189
4.0
1.0
2.5
0.5
( )
1
(
)
2
3
Absolute maximum ratings
(
T
a
=25
C)
(
)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
V
CBO
V
CEO
V
EBO
−
80
−
80
−
5
V
V
I
C
−
0.7
A
0.5
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2SB1189
2SB1238
Collector power
dissipation
P
C
2
W
∗
1
∗
2
1
Junction temperature
Storage temperature
Tj
150
°
C
°
C
Tstg
−
55 to
+
150
∗
1 When mounted on a 40
×
40
×
0.7 mm ceramic board.
∗
2 Printed circuit board 1.7 mm thick, collector plating 1cm
2
or larger.
2SB1238
2.5
6.8
Packaging specifications and h
FE
Type
2SB1189
MPT3
QR
2SB1238
ATV
QR
0.65Max.
Package
h
FE
0.5
Marking
Code
BD
−
TV2
∗
(
1
)
( )
( )
2 3
T100
1000
2.54 2.54
Basic ordering unit (pieces)
Denot
es h
FE
2500
1.05
0.45
∗
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics
(
T
a
=25
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol
BV
CBO
BV
CEO
BV
EBO
Min.
−
80
−
80
−
5
−
Typ.
−
−
−
−
−
−
0.2
−
100
14
Max.
Unit
V
Conditions
−
−
−
−
0.5
−
0.5
−
0.4
390
−
I
I
I
C
=−
50
μ
A
=−
2mA
V
C
V
E
=−
50
μ
A
CB
=−
50V
EB
=−
4V
I
CBO
EBO
CE(sat)
FE
μ
A
μ
A
V
V
V
Emitter cutoff current
I
−
−
120
−
Collector-emitter saturation voltage
DC current
transfer ratio
V
I
C
/I
B
=−
500mA/
−
50mA
=−
3V/
−
0.1A
h
−
MHz
pF
V
V
V
CE
/I
C
Transition frequency
f
T
CE
=−
10V, I
CB
=−
10V, I
E
=
50mA, f
=
100MHz
=
0A, f
=
1MHz
Output capacitance
Cob
−
20
E
2010.07 – Rev.B
1/2
c
○
2010 ROHM Co., Ltd. All rights reserved.
2SB1189 / 2SB1238
Data Sheet
Electrical characteristics curves
−
1.0
−
50
−
20
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
25
°
C
−
10mA
−
9mA
V
CE
=
−
6V
500
−
0.8
−
0.6
−
0.4
−
10
−
5
V
CE
= −
5V
200
100
−
2
−
1
−
2mA
−
1mA
−
0.5
−
3
V
−
0.2
50
−
0.2
−
0.1
−
1
V
I
B
=
0mA
−
6
0
0
−
2
−
4
−
8
−
10
0
−
0.2
−
0.4
−
0.6
−
0.8
−
1.0
−
1.2
−
1.4
−
1.6
−
1
−
2
−
5
−
10
−
20
−
50
−
100
−
200
−
500
COLLECTOR TO EMITTER VOLTAGE
: V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Ground
emitter output characteristics
Fig.2
Ground emitter propagation characteristics
Fig.3 DC
current gain vs. collector current
Ta
=
25
°
C
−
5V
Ta
=
25
°
C
V
CE
=
Ta
=
25
°
C
f
I
=
1MHz
100
50
E
=
0A
500
−
0.2
−
0.1
200
100
I
C
/I
B
=
20/1
Cob
−
0.05
I
C
/I
B
=
10/1
20
10
50
20
−
0.02
−
0.01
2
5
10
20
50
−
0.5
−
1
−
2
−
5
−
10
−
20
−
1
−
5
−
10
−
20
−
50
−
100
−
200
−
500
EMITTER CURRENT : I
(mA)
E
COLLECTOR TO BASE VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
(mA)
C
Fig.5
Gain bandwidth product vs. emitter current
Fig.6 Collector
output capacitance
vs. collector-base voltage
Fig.4 Collector-emitter
saturation voltage
vs.collector current
−
1.0
−
0.5
Ta
=
25
°
C
f
I
=
1MHz
Cib
100
50
C
=
0A
−
0.2
−
0.1
−
0.05
−
0.02
−
0.01
20
10
−
0.005
−
0.002
−
0.001
Ta
=
25
°
C
∗
Single pulse
−
0.5
−
1
−
2
−
5
−
10
−
20
−
0.1
−
0.2
−
0.5
−
1
−
2
−
5
−
10
−
20
−
50
−
100
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Emitter
input capacitance
vs. emitter-base voltage
Fig.8 Safe
operating area (2SB1189)
2010.07 – Rev.B
2/2
c
○
2010 ROHM Co., Ltd. All rights reserved.
Notice
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The content specified herein is for the purpose of introducing ROHM’s products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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© 2010
ROHM Co., Ltd. All rights reserved.
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