ROHM-Semicon-2SC2411KT146Q

2SC2411K  

Medium Power Transistor (32V, 500mA)  

Datasheet  

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Outline  

Parameter  

Value  

SMT3  

ꢀ

V

CEO  

32V  

I

C

500mA  

ꢀ

2SC2411K  

SO

T

-346  

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Features  

1) High I  

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Inner circuit  

CMAX  

ꢀ

I  

=0.5A  

CMAX  

2)Low V  

CE(sat)  

ꢀ

Optimal for low voltage operation.  

3)Complements the 2SA1036K.  

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Application  

DRIVING CIRCUIT, LOW FREQUENC

Y

A

MPLIFIER  

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Packaging specifications  

Basic  

Package  

size  

Taping  

code  

Reel size

 

Tape width  

Part No.  

Package  

SMT3  

ordering  

Marking  

C

(mm)  

(mm)  

unit.(pcs)  

2SC2411K  

2928  

T146  

180  

8

3000  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

1/6  

20150507 – Rev.002  

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2SC2411K  

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Datasheet  

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Absolute maximum ratings

(T

a

= 25°C)  

Parameter  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Values  

Unit  

V

Collector-base voltage  

Collector-emitter voltage  

Emitter-base voltage  

40  

32  

V

5

V

Collector current  

500  

mA  

mW  

℃

*1  

P

D  

Power dissipation  

200  

T

j  

Junction temperature  

Range of storage temperature  

150  

T

stg  

-55 to +150  

℃

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Electrical characteristics

(T

a

= 25°C)  

Values  

Parameter  

Symbol  

Conditions  

Unit  

Min.  

40  

Typ.  

Max.  

–

Collector-base breakdown  

voltage  

BV

CBO  

BV

CEO  

I =

 

100μA  

–

V

V

C

Collector-emitter breakdown  

voltage  

I =

 

1mA  

32  

–

–

C

BV

EBO  

I

CBO  

Emitter-base breakdown voltage  

Collector cut-off current  

Emitter cut-off current  

I =

 

100μA  

5

–

–

–

–

–

–

–

V

μA  

μA  

mV  

–

E

V

CB  

= 20V  

1.0  

1.0  

600  

390  

I

EBO  

V =

 

4V  

EB  

–

Collector-emitter saturation voltage  

DC current gain  

V

I =

 

500mA, I

 

= 50mA  

C

–

CE(sat)  

B

h

FE  

V

= 3

V

, I

 

=

1

00mA  

82  

CE  

CE  

C

V

= 5

V

, I

 

= -20mA,  

E

f

Transition frequency  

Output capacitance  

–

–

250  

6.5  

–

–

MHz  

pF  

T

f = 100MHz  

V

CB  

= 10

V

, I

 

=

0

A,  

E

C

ob  

f = 1MHz  

hFE values are calssified as follows :  

rank  

P

Q

R

–

–

–

h

FE  

82-180  

120-270  

180-390  

–

*1 Each terminal mounted on a reference land  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

2/6  

20150507 – Rev.002  

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2SC2411K  

Datasheet  

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Electrical characteristic curves

(T =

 

25°C)  

a

Fig.1 Grounded emitter propagation  

Fig.2 Typical output characteristics  

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characteristics  

Fig.3 DC current gain vs.collector current(l)  

Fig.4 DC current gain vs.collector current(ll)  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

3/6  

20150507 – Rev.002  

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2SC2411K  

Datasheet  

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Electrical characteristic curves

(T =

 

25°C)  

a

Fig.5 Collector-emitter saturation voltage  

Fig.6 Collector-emitter saturation voltage  

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vs. collector current(l)  

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vs. collector current(ll)  

Fig.7 Base-emitter saturation voltage  

Fig.8 Gain bandwidth product vs.  

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vs. collector current  

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emitter current  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

4/6  

20150507 – Rev.002  

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2SC2411K  

Datasheet  

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Electrical characteristic curves

(T =

 

25°C)  

a

Fig.9 Collector output capacitance vs.  

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collector-base voltage  

Fig.10 Safe Operating Area  

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Emitter input capacitance vs.  

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emitter-base-voltage  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

5/6  

20150507 – Rev.002  

2SC2411K  

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Datasheet  

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Dimensions  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

6/6  

20150507 – Rev.002