ROHM-Semicon-2SC4132T100R

2SC4132 / 2SD1857  

Transistors  

Power Transistor (120V, 1.5A)  

2SC4132 / 2SD1857  

z

External dimensions

(Unit : mm)  

z

Features  

1) High breakdown voltage. (BV

CEO

= 120V)  

2) Low collector output capacitance.  

(Typ. 20pF at V

CB

= 10V)  

2SC4132  

4.0  

1.0  

2.5  

0.5  

( )  

1

3) High transition frequency. (f

T

= 80MHz)  

4) Complements the 2SB1236.  

(

)

2

3

(

)

(1) Base(Gate)  

(2) Collector(Drain)  

(3) Emitter(Source)  

ROHM : MPT3  

EIAJ : SC-62  

z

Absolute maximum ratings

(

T

a =

2

5

°

C)  

Parameter  

Symbol  

Limits  

Unit  

V

Collector-base voltage  

Collector-emitter voltage  

Emitter-base voltage  

V

CBO  

V

CEO  

V

EBO  

120  

120  

V

2SD1857  

6.8  

5

V

2.5  

I

C

2

A

Collector current  

I

CP  

3

A

1

*

2

*

0.5  

0.65Max.  

2SC4132  

2SD1857  

Collector power  

dissipation  

P

C

2

W

0.5  

1

(

)

( )

 

( )  

2 3  

Junction temperature  

Storage temperature  

1

Tj  

150  

°

C  

°

C  

2.54 2.54  

Tstg  

−

55 to +150  

1.05  

0.45  

1

2

Single pulse

 

Pw = 10ms  

When mounted on a 40

×

40

×

0.7mm ceramic board.  

*

Taping specifications  

*

(1) Emitter  

(2) Collector  

(3) Base  

ROHM : ATV  

z

Packaging specifications and h

FE  

Type  

2SC4132 2SD1857  

Package  

MPT3  

PQR  

ATV  

PQR  

−

h

FE  

Marking  

Code  

CB  

*

T100  

1000  

TV2  

2500  

Basic ordering unit (pieces)  

Denotes h

FE  

*

z

Electrical characteristics

(

T

a =

2

5

°

C)  

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Unit  

Conditions  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cutoff current  

BV

CBO  

BV

CEO  

BV

EBO  

120  

120  

5

−

−

−

−

V

V

I

I

I

C

C

E

= 50

µ

A  

= 1mA  

−

−

V

= 50

µ

A  

CB

= 100V  

EB

= 4V  

I

CBO  

EBO  

CE(sat)  

FE  

−

−

1

µ

A  

µ

A  

V

V

V

Emitter cutoff current  

I

−

−

1

Collector-emitter saturation voltage  

DC current

transfer ratio  

V

−

−

2

I

C

/I  

B

= 1A/0.1A  

= 5V/0.1A  

CE

= 5V , I

 

=

−

0.1A , f = 30MHz  

CB

= 10V , I

 

= 0A , f = 1MHz  

*

82  

−

−

390  

−

−

h

V

V

V

CE

/I

C  

Transition frequency  

Output capacitance  

f

T

80  

20  

MHz  

pF  

E

Cob  

−

−

E

*

Measured using pulse current.  

*

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