ROHM-Semicon-2SC5053T100R
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2SC5053
Transistors
Medium power transistor (50V, 1A)
2SC5053
z
Features
z
Dimensions
(Unit : mm)
1) Low saturation voltage, typically V
CE(sat
)
=
0
.12V at I
C
/
I
B
=
5
00mA/50mA
MPT3
2) P
C
=2W (on 40
×
40
×
0.7mm ceramic board)
3) Complements the 2SA1900
(1)Base
(2)Collector
(3)Emitter
z
Absolute maximum ratings
(
T
a
=25
°
C)
Parameter
Symbol
Limits
Unit
V
CBO
V
CEO
V
EBO
60
V
Collector-base voltage
Collector-emitter voltage
Emitter- base voltage
50
V
5
V
1
A
Collector current
I
C
2
A (Pulse)
∗
1
0.5
W
Collector power dissipation
P
C
2
150
W
°
C
°
C
∗
2
Collector power dissipation
Storage temperature
t
j
t
stg
−
55 to
+
150
∗
1 Single
pulse Pw=100ms
∗
2 When
mounted on a 40
+
40
+
0.7mm seramic board.
z
Electrical characteristics
(
T
a
=25
°
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BV
CBO
BV
CEO
60
50
5
−
−
−
−
−
−
−
150
15
−
−
−
0.1
0.1
0.4
390
−
V
V
I
I
I
C
C
=50
µ
A
=1mA
V
E
=50
µ
A
C
B
=40V
E
B
=4V
BV
EBO
I
CBO
EBO
CE(sat)
FE
−
−
−
120
−
µ
A
µ
A
V
V
V
Emitter cutoff current
I
Collector-emitter saturation voltage
DC current transfer ratio
I
C
/I
B
=500mA/50mA
=3V/0.5A
C
E
=5V , I
=
−
50mA , f=100MHz
C
B
=10V , I
=0A , f=1MHz
V
h
−
MHz
pF
V
V
V
CE
/I
C
f
T
Transition frequency
E
Output capacitance
Cob
−
−
E
z
Packaging specifications and h
FE
Type
Package
h
FE
2SC5053
MPT3
QR
∗
CG
Marking
Code
T100
1000
Basic ordering unit (pleces)
∗
Denotes
h
FE
Rev.D
1/2
2SC5053
Transistors
z
Electric characteristics curves
1000
500
1000
500
1000
9mA
10mA
900
Ta=25
°
C
Ta=25
°
C
I
C
/I
B
=10
800
700
600
500
400
V
CE
=3V
200
200
100
50
100
50
20
10
20
10
300
200
5
5
2
1
2
1
100
0
1m
10m
100m
1
2
0.001
0.005
0.02 0.05
0.1 0.2
0.5
0.01
1
2
0
1
2
3
4
5
0.002
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO
EMITTER VOLTAGE
: V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.3 Collector-emitter
saturation voltage
vs.collector current
Fig.1 Grounded
emitter output characteristics
Fig.2 DC
current gain
vs. collector current
5
1000
Ta=25
°
C
Ta
=
25
°
C
200
100
f=1MHz
V
CE
=
5V
∗
I
C Max.
(Pulse
)
500
I
E
=0A
2
1
10ms
100ms
200
100
50
50
20
0.5
0.2
0.1
DC
20
10
5
10
5
0.05
2
1
Ta=25
°
C
0.02
0.01
2
1
∗
Single
nonrepeatitive pulse
0.5
0.1
0.2
0.5
1
2
5
10
20
0.2
1
2
5
10 20
50 100
−
1m
−
10m
−
0.1
−
1
COLLECTOR TO
EMITTER VOLTAGE
: I
CE
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER CURRENT : I
E
(A
)
Fig.6 Safe
operating area
Fig.5 Collector
output capacitance
vs. collector-base voltage
Fig.4 Gain
bandwith product
vs. emitter current
Rev.D
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party’s intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer’s right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machiner
y
, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliabilit
y
.
H
owever, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammabilit
y
,
a
nd fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM
Customer Support System
TEL : +81-75-311-2121
FAX : +81-75-315-0172
Copyright ©
2008 ROHM CO.,
L
T
D.
21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
Appendix1-Rev2.0
