ROHM-Semicon-2SC5103TLQ

2SC5103  

Transistors  

High speed switching transistor (60

V

,

5

A)  

2SC5103  

!

External dimensions

(Units : mm)  

!

Features  

1) Low V

CE(sat)

(Typ. 0.15V at I

C

/ I

B

=

3 / 0.15A)  

2) High speed switching (tf : Typ. 0.1

µ

s at I

C

=

3A)  

3) Wide SOA. (safe operating area)  

4) Complements the 2SA1952.  

5.5  

0.9  

1.5  

C0.5  

0.8Min.  

(1) Base(Gate)  

1.5  

(2) Collector(Drain)  

(3) Emitter(Source)  

2.5  

ROHM : CPT3  

EIAJ : SC-63  

9.5  

!

Absolute maximum ratings

(

T

a

=25

°

C)  

Parameter  

Collector-base voltage  

Collector-emitter voltage  

Emitter-base voltage  

Symbol  

Limits  

100  

Unit  

V

V

V

CBO  

V

CEO  

V

EBO  

60  

5

V

A(DC)  

A(Pulse)  

W

W(Tc

=

25

°

C)  

°

C  

5

10  

Collector current  

I

C  

∗

1

10  

Collector power  

dissipation  

P

C

Junction temperature  

Storage temperature  

Single pulse Pw=100ms  

Tj  

Tstg  

150  

−

55~

+

150  

°

C  

∗

!

Packaging specifications and h

FE  

Type  

Package  

h

FE  

Code  

Basic ordering unit (pieces)  

2SC5103  

CPT3  

PQ  

TL  

2500  

!

Electrical characteristics

(

T

a

=25

°

C)  

Typ.  

Conditions  

Symbol  

Min.  

Max.  

Unit  

Parameter  

−

−

−

−

−

0.15  

−

−

−

−

120  

80  

−

−

0.1  

−

−

−

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cutoff current  

BV

CBO  

BV

CEO  

BV

EBO  

V

V

V

µ

A  

µ

A  

V

V

V

V

−

MHz  

pF  

µ

s  

µ

s  

µ

s  

I

I

I

V

V

I

I

I

I

V

V

V

I

I

V

C

C

E

=

=

=

50

µ

A  

1mA  

50

µ

A  

100  

60  

5

−

−

−

−

−

−

82  

−

−

−

−

10  

10  

0.3  

0.5  

1.2  

1.5  

270  

−

I

CBO  

CB  

=

=

100V  

5V  

I

EBO  

Emitter cutoff current  

EB  

C

/I  

/I  

/I  

/I  

B

=

3A/0.15A  

4A/0.2A  

3A/0.15A  

4A/0.2A  

∗

∗

∗

∗

V

CE(sat)  

BE(sat)  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

C

C

C

B

B

B

=

=

=

V

h

FE  

DC current

transfer ratio  

Transition frequency  

Output capacitance  

Turn-on time  

Storage time  

Fall time  

CE

/I

C

=

2V/1A  

CB  

f

T

=

=

10V , I  

10V , I  

E

=

=

0.5A , f  

0A , f  

=

30MHz  

1MHz  

Cob  

on  

stg  

−

CE  

E

=

∗

t

0.3  

1.5  

0.3  

C

=

=

3A , R  

−

I

B2  

CC

30V  

L

=

10

Ω  

t

B1  

=

0.15A  

t

f

−

∗

Measured using pulse current.