ROHM-Semicon-2SC5865TLQ

High voltage discharge, High speed switching,  

Low Noise (60V, 1A)  

2SC5865  



Features  



Dimensions

(Unit : mm)  

1.0  

A)  

1) High speed switching. ( Tf : Typ. : 50ns

 

at I

C

=  

2) Low saturation voltage, typically.  

TSMT3  

1.0MAX  

2.9  

0.85  

0.7  

:

(Typ. 200mV

 

at I

C

=

5

00mA, I

B

=

5

0mA)  

0.4  

3) Strong discharge power for inductive load and  

capacitance load.  

4) Low Noise.  

(

(

)

)

3

5) Complements the 2SA2092.  

( )  

2

1

0.95 0.95  

1.9  

0.16  

(1) Base  

Each lead has same dimensions  

(2) Emitter  

(3) Collector  



Applications  

Abbreviated symbol : VU  

High speed switching, Low noise  



Structure  

NPN Silicon epitaxial planar transistor  



Packaging specifications  

Package  

Taping  

TL  

Type  

Code  

Basic ordering unit (pieces)  

3000  

2SC5865  



Absolute maximum ratings

(

T

a

=25



C)  

Parameter  

Collector-base voltage  

Collector-emitter voltage  

Emitter-base voltage  

Symbol  

Limits  

Unit  

V

V

CBO  

V

CEO  

V

EBO  

60  

60  

6

V

V

I

C

1.0  

2.0  

A

Collector current  

Power dissipation  

∗

∗

1

2

I

CP  

A

P

C

500  

mW  

Junction temperature  

Tj  

150  

°

C  

°

C  

Range of storage temperature  

Tstg  

−

55 to

+

150  

∗

1 Pw

=

10ms  

∗

2 Each terminal mounted on a recommended land  

2011.03 – Rev.A  

1/3  

c

○

2011 ROHM Co., Ltd. All rights reserved.  

2SC5865  

Data Sheet  



Electrical characteristics

(

T

a

=25



C)  

Parameter  

Symbol Min.  

Typ.  

−

Max.  

−

Unit  

V

Conditions  

Collector-emitter breakdown voltage

 

BV

CEO  

60  

60  

6

I

I

I

C

=

1mA  

BV

CBO  

BV

EBO  

−

−

V

C

=  

100

μ

A  

100

μ

A  

Collector-base breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

Emitter cut-off current  

Collector-emitter saturatioin voltage  

DC current gain  

−

−

V

E

=  

I

CBO  

EBO  

CE(sat)  

FE  

−

−

1.0  

1.0  

500  

390  

−

μ

A  

μ

A  

mV  

−

V

CB  

EB  

=

40V  

I

−

−

V

=

4V  

V

−

200  

−

I

C

=

500mA, I

B

=

50mA  

h

120  

−

V

V

V

CE  

CE  

CB  

=

=

=

2V, I  

C

=

100mA  

∗

1  

=

−

100mA, f

=

10MHz  

Transistor frequency  

Collector output capacitance  

Turn-on time  

fT  

250  

10  

50  

130  

50  

MHz  

pF  

ns  

ns  

ns  

10V, I  

10V, I  

E

E

Cob  

ton  

tstg  

tf  

−

−

=0

mA, f

=

1MHz  

−

−

I

I

I

C

=

1A,  

=

100mA  

B1  

Storage time  

−

−

B2

=

−

100mA  

∗

2  

Fall time  

−

−

V

CC

25V  

∗

1 Non repetitive pulse  

∗

2 See switching characteristics measurement circuits  



h

FE

RANK  

Q

R

120-270  

180-390  



Electrical characteristic curves  

1000  

100  

10  

200  

1000  

100  

Ta

=

25

°

C  

CC

=

25V  

/I =10/1  

V

CE

=

2V  

Ta

=

125

°

C  

V

I

C B  

I

B

=500

μ

A  

160  

120  

80  

450

μ

A  

400

μ

A  

350

μ

A  

300

μ

A  

Tstg  

Ta

=

−

40

°

C  

Ta

=

25

°

C  

Tf  

250

μ

A  

200

μ

A  

150

μ

A  

100

μ

A  

10  

Ton  

40  

0

50

μ

A  

0

μ

A  

1

0.001  

0.01  

0.1  

1

10  

0.01  

0.1  

1

C

10  

0

1

2

3

4

5

COLLECTOR CURRENT : I  

C

(A)  

COLLECTOR CURRENT : I  

(A)  

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V

)  

Fig.2 Switching

 

Time  

Fig.3 DC

 

current gain  

vs. collector current (

Ι

)  

Fig.1 Typical

 

output characteristics  

1000  

10  

1

10  

I

C

/I

B

=

10/1  

Ta

=

25

°

C  

Ta

=

25

°

C  

V

CE

=

5V  

1

V

CE

=

2V  

V

CE

=

3V  

100  

10  

Ta

=

125

°

C  

I

C

/I

B

=

100/1  

0.1  

0.1  

Ta

=

25

°

C  

I

C

/I

B

=

20/1  

Ta

=

−

40

°

C  

I

C

/I  

B

=

10/1  

0.01  

0.001  

0.01  

0.001  

1

0.01  

0.1  

1

10  

0.01  

0.1  

1

10  

0.001  

0.01  

0.1  

1

10  

COLLECTOR CURRENT

 

: I

C

(A)  

COLLECTOR CURRENT : I

C

(

A)  

COLLECTOR CURRENT : I

C

(A)  

Fig.5 Collector-emitter

 

saturation voltage  

Fig.4 DC

 

current gain  

vs. collector current (

ΙΙ

)  

Fig.6 Collector-emitter

 

saturation voltage  

vs. collector current (

Ι

)  

vs. collector current (

ΙΙ

)  

2011.03 – Rev.A  

2/3  

c

○

2011 ROHM Co., Ltd. All rights reserved.  

2SC5865  

Data Sheet  

100  

10  

1

10  

1000  

Ta

=

25

°

C  

I

C

/I

B

=

10/1  

Ta

=

25

°

C  

CE

=10V  

f=1MHz  

V

100  

10  

1

Ta

= −

40

°

C  

Ta

=

125

°

C  

1

Ta

=

25

°

C  

0.1  

1

10  

100  

0.1  

0.001  

0.01  

0.1  

1

10  

0.001  

0.01  

0.1  

1

10  

COLLECTOR TO BASE VOLTAGE : V

CB

(V)  

EMITTER CURRENT : I  

E

(A)  

COLLECTOR CURRENT : I

C

(A)  

Fig.9 Collector output capacitance  

Fig.8 Transition frequency  

Fig.7 Base-emitter

 

saturation voltage  

vs. collector current  

10  

1

Ta

=

125

°

C  

Ta

=

25

°

C  

0.1  

Ta

=−

40

°

C  

0.01  

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  

1

1.1 1.2 1.3 1.4 1.5  

BASE TO EMITTER VOLTAGE : V

BE

(V)  

Fig.10 Ground

 

emitter propagation  

characteristics  



Switching characteristics measurement circuits  

R

L

=25

Ω  

V

IN  

I

I

B1  

B2  

I

C

V

CC

25V  

P

W

P

W

50  

S

Duty cycle

 

1%  

I

B1  

I

B2  

BASE CURRENT  

WAVEFORM  

90%  

I

C

COLLECTOR CURRENT  

WAVEFORM  

10%  

Ton  

Tstg Tf  

2011.03 – Rev.A  

3/3  

c

○

2011 ROHM Co., Ltd. All rights reserved.  

Notice  

N o t e s  

Thank you for your accessing to ROHM product informations.  

More detail product informations and catalogs are available, please contact us.  

ROHM Customer

 

Support System  

© 2011

 

ROHM Co., Ltd. All rights reserved.  

R1120

A