ROHM-Semicon-2SC5866TLR

2SC5866  

Medium power transistor (60V, 2A)  

Datasheet  

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Outline  

Parameter  

Value  

TSMT3  

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V

CEO  

60V  

I

C

2A  

ꢀ

SO

T

-346T  

SC-96  

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Features  

1)High speed switching.  

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Inner circuit  

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(t :Typ.:35ns at I

 

=2A)  

f

C

2)Low saturation voltage, typically  

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(Typ.:200mV at I

 

=1.0A, I

 

=100mA)  

C

B

3)Storong discharge power for inductive  

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load and capacitance load.  

4)Complements the 2SA2094  

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Application  

LOW FREQUENC

Y

A

MPLIFIER, HIGH SPEED SWITCHING  

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Packaging specifications  

Basic  

Package  

size  

Taping Reel

 

size Tape

 

width  

Part No.  

Package  

ordering  

Marking  

VL  

code  

(mm)  

(mm)  

unit.(pcs)  

2SC5866  

TSMT3  

2928  

TL  

180  

8

3000  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

1/6  

20150730 – Rev.002  

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2SC5866  

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Datasheet  

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Absolute maximum ratings

(T

a

= 25°C)  

Parameter  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Values  

Unit  

V

Collector-base voltage  

Collector-emitter voltage  

Emitter-base voltage  

60  

60  

V

6

V

2

A

Collector current  

*1  

I

CP  

4

0.5  

A

*2  

P

D  

Power dissipation  

W

℃

℃

T

j  

Junction temperature  

Range of storage temperature  

150  

T

stg  

-55 to +150  

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Electrical characteristics

(T

a

= 25°C)  

Values  

Parameter  

Symbol  

Conditions  

I =

 

100μA  

Unit  

Min.  

60  

Typ.  

Max.  

–

Collector-base breakdown  

voltage  

Collector-emitter breakdown  

voltage  

BV

CBO  

BV

CEO  

–

V

V

C

I =

 

1mA  

C

60  

–

–

BV

EBO  

I

CBO  

Emitter-base breakdown voltage  

Collector cut-off current  

Emitter cut-off current  

I =

 

100μA  

6

–

–

V

μA  

μA  

mV  

–

E

V

CB  

V

EB  

= 40V  

= 4V  

–

–

1.0  

1.0  

500  

390  

I

EBO  

–

–

–

200  

–

Collector-emitter saturation voltage  

DC current gain  

V

I =

 

1.0A, I

 

= 100mA  

CE(sat)  

C

B

h

FE  

V

CE  

= 2

V

, I

 

=

1

00mA  

120  

C

V

= 10

V

, I

 

= -100mA,  

E

CE  

*3  

Transition frequency  

Output capacitance  

Turn-On time  

–

–

–

–

–

200  

10  

–

–

–

–

–

MHz  

pF  

ns  

f

T

f = 10MHz  

V

CB  

= 10

V

, I

 

=

0

A,  

E

C

ob  

f = 1MHz  

*3  

I =

 

2A,  

C

t

on  

50  

I

I

= 200mA,  

= -200mA,  

⋍

25

V

,  

B1  

B2  

*3  

t

stg  

Storage time  

120  

35  

ns  

V

CC  

R =

 

12.5Ω  

See test circuit  

L

t

f

*3  

Fall time  

ns  

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hFE values are calssified as follows :  

rank  

hFE  

Q

R

–

–

–

–

–

120-270  

180-390  

–

*1 Pw=10ms  

*2 Each terminal mounted on a reference land.  

*3 Pulsed  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

2/6  

20150730 – Rev.002  

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2SC5866  

Datasheet  

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Electrical characteristic curves

(T =

 

25°C)  

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Fig.1 Ground Emitter Propagation  

Fig.2 Typical Output Characteristics  

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Characteristics  

Fig.3 DC Current Gain vs. Collector  

Fig.4 DC Current Gain vs. Collector  

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Current (I)  

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Current (II)  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

3/6  

20150730 – Rev.002  

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2SC5866  

Datasheet  

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Electrical characteristic curves

(T =

 

25°C)  

a

Fig.5 Collector-Emitter Saturation  

Fig.6 Collector-Emitter Saturation  

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Voltage vs. Collector Current (I)  

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Voltage vs. Collector Current (II)  

Fig.7 Base-Emitter Saturation Voltage  

Fig.8 Gain Bandwidth Product vs.  

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vs. Collector Current  

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Emitter Current  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

4/6  

20150730 – Rev.002  

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2SC5866  

Datasheet  

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Electrical characteristic curves

(T =

 

25°C)  

a

Fig.9 Collector Output Capacitance vs.  

Fig.10 Safe Operating Area  

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Collector-Base Voltage  

SWITCHING TIME TEST CIRCUIT  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

5/6  

20150730 – Rev.002  

2SC5866  

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Datasheet  

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Dimensions  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

6/6  

20150730 – Rev.002