ROHM-Semicon-2SD1766T100Q
| Part # | ROHM-Semicon-2SD1766T100Q |
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Medium power transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
Features
Dimensions
(Unit : mm)
1) Low V
CE(sat)
.
V
CE(sat)
= 0.5V (Typ.)
(I
C
/I
B
= 2A / 0.2A)
2) Complements the 2SB1188 / 2SB1182 / 2SB1240
2SD1766
2SD1758
+
0.2
4.5
+
0.2
−
0.1
2.3
6.5 0.2
−
0.1
+
0.2
1.5
C0.5
1.6 0.1
−
0.1
+
0.2
5.1
0.5 0.1
−
0.1
(1) (2)
(3)
0.65 0.1
+
0.1
0.75
0.4
Structure
−
0.05
0.9
0.5 0.1
3.0 0.2
0.4 0.1
1.5 0.1
0.4 0.1
1.5 0.1
Epitaxial planar type NPN silicon transistor
0.55 0.1
1.0 0.2
2.3 0.2
2.3 0.2
(1) (2) (3)
Abbreviated symbol : DB
∗
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SD1862
2.5 0.2
6.8 0.2
0.65Max.
0.5 0.1
(1) (2)
2.54
(3)
2.54
1.05
0.45 0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
∗
Denotes h
FE
Absolute maximum ratings
(
T
a
=25
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
40
32
5
Unit
V
CBO
V
CEO
V
EBO
V
V
V
2
A (DC)
A (Pulse)
Collector current
I
C
∗
1
2.5
0.5
2
W
2SD1766
Collector
∗
2
∗
3
power
dissipation
P
C
2SD1758
2SD1862
10
1
W (T
C
=
25
°
C)
W
°
C
°
C
Junction temperature
Storage temperature
Tj
150
Tstg
−
55~
+
150
∗
1 Single pulse, P
W
=20ms
∗
2 When mounted on a 40
×
40
×
0.7 mm ceramic board.
∗
3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm
2
or lager.
2009.12 – Rev.B
1/3
c
○
2009 ROHM Co., Ltd. All rights reserved.
2SD1766 / 2SD1758 / 2SD1862
Data Sheet
Electrical characteristics
(
T
a
=25
C)
Parameter
Symbol Min.
Typ. Max.
Unit
V
Conditions
Collector-base breakdown voltage
BV
CBO
40
32
5
−
−
−
−
I
I
I
C
=
50
μ
A
=
1mA
Collector-emitter breakdown voltage
BV
CEO
V
C
Emitter-base breakdown voltage
Collector cutoff current
BV
EBO
−
−
V
E
=
50
μ
A
CB
=
20V
EB
=
4V
I
CBO
EBO
FE
CE(sat)
−
−
1
μ
A
μ
A
−
V
V
V
Emitter cutoff current
I
−
−
1
∗
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
h
120
−
390
0.8
−
−
CE
=
3V, I
=
0.5A
C
∗
∗
V
0.5
100
30
I
C
/I
CE
=
5V, I
CB
=
10V, I
B
=
2A / 0.2A
=−
50mA, f
=
100MHz
=
0A, f
=
1MHz
V
f
T
−
MHz
pF
V
V
E
Output capacitance
Cob
−
−
E
Measured using pulse current.
∗
Packaging specifications and h
FE
Package
Taping
TL
Code
Basic ordering
unit (pieces)
T100
1000
TV2
2500
−
2500
Type
h
FE
2SD1766
2SD1758
2SD1862
QR
QR
QR
−
−
−
−
−
h
FE
values are classified as follows :
Item
Q
R
h
FE
120 to 270
180 to 390
Electrical characteristic curves
0.5
0.4
0.3
0.2
Ta
=
25
°
C
Ta
=
25
°
C
2000
Ta
=
25
°
C
3.0mA
2.7mA
2.4mA
2.1mA
1.8mA
1.5mA
1.2mA
V
CE
=
3V
500
1000
500
200
100
50
200
100
50
V
CE
=
3V
1V
20
10
5
0.9mA
0.6mA
0.3mA
0.1
0
2
1
0
I
B
=
0A
20
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
BASE TO EMITTER VOLTAGE
: V
BE
(V)
0
0.4
0.8
1.2
1.6
2.0
5
10 20
50 100
200 500
1A 2A
(mA)
COLLECTOR TO EMITTER VOLTAGE
: V
CE
(V)
COLLECTOR CURRENT
: I
C
Fig.1 Grounded
emitter propagation
characteristics
Fig.2 Grounded
emitter output
characteristics
Fig.3 DC
current gain vs. collector
current
1000
2
1
Ta
=
25
°
C
CE
=
5V
Ta
=
25
°
C
Ta
=
25
°
C
V
500
500
I
C
/I
B
=
10
200
100
200
100
50
0.5
I
C
/I
B
=
50
0.2
0.1
50
20
10
10 20
50 100
200 500
1A 2A
20
−
1
−
2
20
5
10 20
50 100
200 500
1A 2A
(mA)
−
5
−
10
−
20
−
5
0
−
100
−
200
−
500
−
1A
EMITTER CURRENT
: I
(mA)
5
COLLECTOR CURRENT
: I
C
COLLECTOR CURRENT
: I
(mA)
C
E
Fig.4 Collector-emitter
saturation
voltage vs. collector current
Fig.5 Collector-emitter
saturation
voltage vs. collector current
Fig.6 Transition
frequency vs. emitter
current
2009.12 – Rev.B
2/3
c
○
2009 ROHM Co., Ltd. All rights reserved.
2SD1766 / 2SD1758 / 2SD1862
Data Sheet
5
5
1000
Ta
=
25
°
C
f
I
I
=
1MHz
2
1
2
1
500
E
=
0A
C
=
0A
∗
Cib
P
W
=100ms
200
100
50
0.5
0.5
∗
P
W
=
10ms
100ms
DC
∗
0.2
0.1
0.2
0.1
Cob
0.05
0.05
T
a
=
25
°
C
T
C
=
25
°
C
∗
Single
nonrepetitive
pulse
∗
Single
20
10
nonrepetitive
pulse
0.02
0.01
0.02
0.01
0.1 0.2
0.5
1
2
5
10 20
50
0.1 0.2
0.5
1
2
5
10 20
50
0.5
1
2
5
10
20
COLLECTOR TO EMITTER VOLTAGE
: V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE
: V
CE
(V)
COLLECTOR TO BASE VOLTAGE
: V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.8 Safe
operating area
(2SD1766)
Fig.9 Safe
operating area
(2SD1758)
Fig.7 Collector
output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
3
2
Ic Max
Ic Max Pulse
1
0.5
0.2
0.1
0.05
Ta
=
25
°
C
Single
nonrepetitive
pulse
0.2 0.5
1
2
5
10 20
50
COLLECTOR TO EMITTER VOLTAGE
: V
CE
(V)
Fig.10 Safe
operating area
(2SD1862)
2009.12 – Rev.B
3/3
c
○
2009 ROHM Co., Ltd. All rights reserved.
Notice
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consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM’s products (hereinafter
“Products”). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
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Please be sure to implement in your equipment using the Products safety measures to guard
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Support System
© 2009
ROHM Co., Ltd. All rights reserved.
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