ROHM-Semicon-2SD2150T100R
| Part # | ROHM-Semicon-2SD2150T100R |
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Low Frequency Transistor (20V, 3A)
2SD2150
z
Features
z
Dimensions
(Unit : mm)
1) Low V
CE(sat)
.
2SD2150
V
CE(sat)
= 0.2V(Typ.)
+
0.2
−
0.1
4.5
（
I
C
/ I
B
= 2A / 0.1A
）
2) Excellent current gain characteristics.
3) Complements the 2SB1424.
+
0.2
−
0.1
1.5
1.6 0.1
(1) (2)
(3)
+
0.1
0.4
−
0.05
0.5 0.1
3.0 0.2
0.4 0.1
1.5 0.1
0.4 0.1
1.5 0.1
z
Structure
Epitaxial planar type
NPN silicon transistor
(1) Base
ROHM : MPT3
EIAJ : SC-62
(2) Collector
(3) Emitter
z
Absolute maximum ratings
(
T
a
=25
°
C)
Abbreviated symbol:
CF
∗
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
V
V
CBO
CEO
EBO
40
V
Denotes h
FE
∗
20
V
6
V
A (DC)
A (Pulse)
W
3
Collector current
I
C
5
1
∗
0.5
Collector power dissipation
P
C
2
W
2
∗
Junction temperature
Storage temperature
Tj
150
°
C
Tstg
−
55 to
+
150
°
C
1 Single
pulse Pw
=
10ms
2 Mounted
on a 40
×
40
×
0.7mm Ceramic substrate.
∗
∗
z
Electrical characteristics
(
T
a
=25
°
C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BV
CBO
BV
CEO
BV
EBO
40
20
6
I
I
I
C
=
50
=
1mA
=
50
µ
A
−
−
V
C
−
−
V
E
µ
A
I
CBO
EBO
CE(sat)
FE
−
−
0.1
0.1
0.5
560
−
µ
A
A
V
V
CB
=
30V
EB
=
5V
Emitter cutoff current
I
−
−
µ
Collector-emitter saturation voltage
DC current transfer ratio
V
−
120
−
0.2
−
V
I
C
/I
B
=
2A/0.1A
∗
h
−
V
V
V
CE
=
2V, I
C
=
0.1A
= −
0.5A, f
=
100MHz
=
0A, f
=
1MHz
f
T
290
25
MHz
pF
CE
=
2V, I
E
Transition frequency
Cob
−
−
CE
=
10V, I
E
Output capacitance
Measured using pulse current.
∗
2009.11 – Rev.B
1/2
c
○
2009 ROHM Co., Ltd. All rights reserved.
2SD2150
Data Sheet
z
Packaging specifications and h
FE
Package
Code
Taping
T100
Basic ordering
unit (pieces)
1000
h
FE
Type
2SD2150
RS
h
FE
values are classified as follows :
Item
R
S
h
FE
180 to 390
270 to 560
z
Electrical characteristic curves
2
1.6
1.2
0.8
10
5
4
3
2
Ta
=
25
°
C
50mA
45mA
40mA
Ta
=
25
°
C
V
CE
=
2V
20mA
18mA
16mA
14mA
12mA
10mA
35mA
30mA
5
8mA
2
1
25mA
20mA
6mA
4mA
2mA
Ta
=
100
°
C
0.5
15mA
10mA
25
°
C
0.2
0.1
−
40
°
C
0.05
0.02
5mA
0.01
5m
0.4
0
1
0
2m
1m
0
I
=
0A
B
I
B
=
0A
1.0
0.2 0.4 0.6 0.8 1.0
1.2 1.4
0
0.2
0.4
0.6
0.8
0
1
2
3
4
5
BASE TO EMITTER VOLTAGE
: V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE
: V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE
: V
CE
(V)
Fig.1 Grounded
emitter propagation
characteristics
Fig.2 Grounded
emitter output
Fig.3 Grounded
emitter output
characteristics (
)
characteristics (
)
5000
1
2
V
CE
=
2V
I
C
/I
B
=
10
l
C
/l
B
=
20
0.5
Ta
=
100
°
C
25
°
C
1
2000
1000
500
−
40
°
C
Ta
=
100
°
C
25
°
C
0.5
0.2
0.1
−
40
°
C
0.2
0.1
Ta
=
100
°
C
25
°
C
−
40
°
C
0.05
200
100
50
50m
20m
0.02
0.01
5m
10m
5m
20
2m
1m
10
5
2m
1m 2m 5m
0
.01 0.
0
2
0
.
0
5 0.1 0.2
0.5
1
2
5
10
1m 2m
5m10m20
m
5
0m0.1 0.2
0.5 1
2
5
10
1m 2m 5m
0
.0
1
0
.02 0.05
2
5 10
0.
1
0
.2 0.5
1
COLLECTOR CURRENT
: I
C
(A)
COLLECTOR CURRENT
: I
C
(A)
COLLECTOR CURRENT
: I
(A)
C
Fig.4 DC
current gain vs.
collector current
Fig.5 Collector-emitter
Fig.6 Collector-emitter
saturation voltage vs.
collector current (
saturation voltage vs.
collector curren (
)
)
1000
500
1000
500
2
Ta=25
°
C
CE
=2V
Ta
=
25
°
C
f
=
1MHz
I
C
/I
B
=
50
V
1
I
E
=
0A
=
0A
I
C
200
100
50
0.5
C
ob
200
0.2
Ta
=
100
°
C
25
°
C
−
40
°
C
0.1
100
50
20
50m
C
ob
10
5
20m
10m
5m
20
10
2
1
2m
−
1
−
2
−
5
−
10
−
20
−
50
−
10
0
−
200
−
500
−
1
0
00
0.1 0.2
0.5
1
2
5
10 20
50
1m 2m 5m10m20m50m
0
.1 0.2
0.5 1
2
5
10
EMITTER CURRENT
: I
(mA)
E
COLLECTOR TO BASE VOLTAGE
: V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
COLLECTOR CURRENT
: I
(A)
C
Fig.8 Gain
bandwidth product vs.
emitter current
Fig.9 Collector
output capacitance vs.
collector-base voltage
Fig.7 Collector-emitter
saturation voltage vs.
collector current (
Emitter input capacitance vs.
emitter-base voltage
)
2009.11 – Rev.B
2/2
c
○
2009 ROHM Co., Ltd. All rights reserved.
Notice
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The content specified herein is for the purpose of introducing ROHM’s products (hereinafter
“Products”). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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Support System
© 2009
ROHM Co., Ltd. All rights reserved.
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