ROHM-Semicon-2SD2170T100
| Part # | ROHM-Semicon-2SD2170T100 |
Download  | ROHM-Semicon-2SD2170T100 |
2SD2170
Transistors
Medium Power Transistor
+
20
(Motor, Relay drive) (90
, 2A)
−
10
2SD2170
!
Features
!
External dimensions
(Units : mm)
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to
“L” loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
4.0
2.5
1.0
0.5
(
)
1
(
)
2
3
(
)
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
!
Absolute maximum ratings
(
T
a
=25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
+20
−
10
V
CBO
V
CEO
V
EBO
90
90
6
V
+20
−
10
V
V
2
A (DC)
A (Pulse)
W
Collector current
I
C
3
1
*
2
*
Collector power dissipation
Junction temperature
Storage temperature
P
C
2
Tj
150
°
C
°
C
Tstg
−
55~+150
1
2
Single pulse
Pw = 10ms , Duty = 1 / 2
When mounted on a 40 x 40 x 0.7 mm ceramic board.
*
*
!
Packaging specifications and h
FE
!
Equivalent circuit
Type
2SD2170
MPT3
1k~10k
DM
C
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
T100
1000
B
R
1
R
2
E
E
B
C
: Emitter
: Base
: Collector
R
R
1
2
3.5k
Ω
300
Ω
!
Electrical characteristics
(
T
a
=25
°
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
BV
CBO
BV
CEO
80
80
–
–
110
110
10
V
V
I
I
C
C
= 50
µ
A
= 1mA
I
CBO
EBO
CE(sat)
FE
–
–
µ
A
mA
V
V
CB
= 70V
EB
= 5V
Emitter cutoff current
I
–
–
3
V
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
V
–
–
1.5
10000
–
I
C
/I
B
= 1A/1mA
1
*
h
1000
–
–
V
V
V
CE
= 2V , I
C
= 1A
1
*
f
T
–
–
80
25
MHz
pF
CE
= 5V , I
E
=
−
0.1A , f = 30MHz
2
*
Output capacitance
Cob
–
CB
= 10V , I
E
= 0A , f = 1MHz
1 Measured using pulse current.
*
2 Transition frequency of the device.
*
