ROHM-Semicon-2SD2704KT146
| Part # | ROHM-Semicon-2SD2704KT146 |
Download  | ROHM-Semicon-2SD2704KT146 |
For Muting (20
V
,
0
.3A)
2SD2704K
Features
Dimensions
(Unit : mm)
1) High DC current gain.
h
FE
= 820 to 2700
2) High emitter-base voltage.
V
EBO
= 25V (Min.)
3) Low
Ron
2SD2704K
SOT-346
2.9
1.1
0.8
0.4
( )
3
Ron= 0.7
(Typ.)
Structure
Epitaxial planar type
NPN silicon transistor
( )
2
( )
1
(1) Emitter
(2) Base
0.95 0.95
0.15
1.9
(3) Collector
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol : XL
Packaging specifications
Package
Code
Taping
T146
Basic ordering
3000
Type
unit (pieces)
2SD2704K
Absolute maximum ratings
(
T
a
=25
C)
Symbol
Limits
50
Unit
V
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
CBO
V
CEO
V
EBO
20
V
25
V
I
C
0.3
A
Collector power dissipation
Junction temperature
Storage temperature
P
C
0.2
W
°
C
°
C
Tj
150
Tstg
−
55 to
+
150
Electrical characteristics
(
T
a
=25
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol Min.
Typ.
−
Max.
−
Unit
Conditions
BV
CBO
50
20
25
−
V
V
I
I
I
C
=
10
μ
A
=
1mA
BV
CEO
BV
EBO
−
−
C
−
−
V
E
=
10
μ
A
CB
=
50V
EB
=
25V
I
CBO
−
0.1
0.1
100
2700
−
μ
A
μ
A
mV
−
V
V
Emitter cutoff current
I
EBO
−
−
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
V
CE(sat)
−
50
−
I
C
/I
CE
=
2V, I
CE
=
6V, I
CB
=
10V, I
=
5mA, Vi
=
100mV(rms), f
=
1kHz
B
=
30mA/3mA
=
4mA
= −
4mA, f
=
10MHz
=
0A, f
=
1MHz
h
FE
820
−
V
V
V
C
35
3.9
0.7
MHz
pF
Ω
E
∗
f
T
Output capacitance
Cob
−
−
E
Output On-resistance
Ron
−
−
I
B
Measured using pulse current
∗
2012.01 – Rev.C
1/3
c
○
2012 ROHM Co., Ltd. All rights reserved.
2SD2704K
Data Sheet
Electrical characteristic curves
1000
1000
10000
1000
V
CE
=
2V
V
CE
=
6V
V
CE
=
2V
Ta
=
125
°
C
25
°
C
Ta
=
125
°
C
25
°
C
Ta
=
125
°
C
25
°
C
100
10
100
10
Ta
=
−
40
°
C
−
40
°
C
Ta
= −
40
°
C
100
10
0.1
0.1
0.1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
0.2
0.4
0.6
0.8
1
1.2
1
10
100
1000
COLLECTOR CURRENT
: I
(mA)
C
BASE TO EMITTER VOLTAGE : V
BE(ON)
(V)
BASE TO EMITTER VOLTAGE : V
BE(ON)
(V)
Fig.1 Grounded
emitter propagation
Fig.2 Grounded
emitter propagation
Fig.3 DC
current gain
characteristics (
Ι
)
characteristics (
ΙΙ
)
vs. collector current (
)
10000
10000
1000
100
10000
1000
100
V
CE
=
6V
I
C
/I
B
=
10/1
I
C
/I
B
=
20/1
Ta
=
125
°
C
1000
Ta
=
25
°
C
Ta
=
125
°
C
Ta
=
125
°
C
Ta
= −
40
°
C
100
10
Ta
=
25
°
C
Ta
=
25
°
C
10
10
Ta
= −
40
°
C
Ta
= −
40
°
C
1
10
100
1000
1
1
10
100
1000
1
1
10
100
1000
COLLECTOR CURRENT
: I
C
(mA)
COLLECTOR CURRENT
: I
C
(mA)
COLLECTOR CURRENT
: I
C
(mA)
Fig.4 DC
current gain
Fig.5 Collector-emitter
saturation voltage
vs. collector current (
)
Fig.6 Collector-emitter
saturation voltage
vs. collector current (
)
vs. collector current (
)
10000
1000
100
10000
10000
I
C
/I
B
=
50/1
I
C
/I
B
=
10/1
I
C
/I
B
=
20/1
Ta
=
125
°
C
Ta
= −
40
°
C
Ta
= −
40
°
C
1000
1000
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
25
°
C
10
Ta
=
125
°
C
Ta
=
125
°
C
Ta
= −
40
°
C
1
1
10
100
1000
10
0
1
10
100
1000
10
0
1
10
100
1000
COLLECTOR CURRENT
: I
C
(mA)
COLLECTOR CURRENT
: I
C
(mA)
COLLECTOR CURRENT
: I
C
(mA)
Fig.7 Collector-emitter
saturation voltage
vs. collector current (
Fig.8 Base-emitter
saturation voltage
vs. collector current (
)
Fig.9 Base-emitter
saturation voltage
vs. collector current (
)
)
2012.01 – Rev.C
2/3
c
○
2012 ROHM Co., Ltd. All rights reserved.
2SD2704K
Data Sheet
100
10
1
10000
10000
Ta
=
25
°
C
I
C
/I
B
=
50/1
Ta
=
25
°
C
f
=
50MHz
f
=
1MHz
I
E
=
0A
I
=
0A
E
Ta
= −
40
°
C
1000
Ta
=
25
°
C
Ta
=
125
°
C
0.
1
1
10
100
10
0
1
10
100
1000
1
1
10
100
COLLECTOR TO BASE VOLTAGE
: V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
COLLECTOR CURRENT
: I
(mA)
C
EMITTER CURRENT
: I
(mA)
E
Fig.12 Collector
output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Fig.10 Base-emitter
saturation voltage
Fig.11 Gain
bandwidth product
vs. emitter current
vs. collector current (
)
100
10
100
10
Ta
=
25
°
C
Ta
=
25
°
C
1
1
See Fig.15
See Fig.16
0.1
0.1
0.01
0.1
1
10
100
)
0.01
0.1
1
10
100
)
BASE CURRENT
: I
B
(mA)
BASE CURRENT
: I
B
(mA)
Fig.13 Output-on
resistance vs. base current (
Fig.14 Output-on
resistance vs. base current (
Ron measurement circuit
R
L
=
1k
Ω
R
L
=
1k
Ω
Input
Input
Output
v
Output
V
V
V
i
0
v
0
V
i
100mV(rms)
1V(rms)
f=1kHz
100mV(rms)
1V(rms)
I
B
I
B
f=1kHz
v
i
−
0
v
v
i
−
v
0
0
Ron
=
×
R
L
Ron
=
×
R
L
v
v
0
Fig.15 Ron
measurement circuit (
)
Fig.16 Ron
measurement circuit (
)
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
2012.01 – Rev.C
3/3
c
○
2012 ROHM Co., Ltd. All rights reserved.
Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM’s products (hereinafter
“Products”). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-
controller or other safety device). ROHM shall bear no responsibility in any way for use of any
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ROHM Customer
Support System
© 2012
ROHM Co., Ltd. All rights reserved.
R1120A
