ROHM-Semicon-2SK3018T106
| Part # | ROHM-Semicon-2SK3018T106 |
Download  | ROHM-Semicon-2SK3018T106 |
2SK3018
Transistor
2.5V Drive
Nch MOS
FET
2SK3018
z
External dimensions
(Unit : mm)
z
Structure
Silicon N-channel
MOSFET
UMT3
2.0
0.2
0.3
( )
3
z
Applications
Interfacing, switching (30
V
,
1
00mA)
(
0.15
(1) Source
(2) Gate
Each lead has
ame dimensions
z
Features
Abbreviated symbol : KN
1) Low on-resistance.
(3) Drain
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
z
Packaging specifications
z
Equivalent circuit
Package
Code
Taping
T10
Drain
Type
Basic ordering unit
(pieces)
3000
2SK3018
Gate
z
Absolute
ratings
(
T
a
=25
°
Gate
Protection
Diode
∗
Para
ter
Dr
ource voltage
Gate-s
e voltage
S
bo
Limits
30
Unit
V
Source
V
DSS
GSS
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
∗
V
20
V
Continuous
Pulsed
I
D
100
mA
mA
mW
°
C
current
1
∗
I
DP
400
2
∗
Total power dissipation
Channel temperature
Storage temperature
P
D
200
Tch
150
Tstg
−
55 to
+
150
°
C
1 Pw
≤
10
µ
s, Duty cycle
≤
1%
∗
2 With each pin mounted on the recommended lands.
∗
z
Thermal resistance
Parameter
Symbol
Rth(ch-a)
∗
Limits
625
Unit
Channel to ambient
∗
With each pin mounted on the recommended lands.
°
C / W
Rev.B
1/3
2SK3018
Transistor
z
Electrical characteristics
(
T
a
=25
°
C)
Parameter
Symbol Min.
Typ.
Max.
Unit
Conditions
Gate-source leakage
I
GSS
(BR)DSS
DSS
−
30
−
−
−
1
−
µ
A
V
V
GS
=
20V, V
DS
=
0V
Drain-source breakdown voltage
V
I
D
=
10
µ
A, V
GS
=
0V
Zero gate voltage drain curren
t
I
−
1
µ
A
V
V
V
DS
=
30V, V
GS
=
0V
Gate threshold voltage
V
GS(th)
0.8
−
−
1.5
8
DS
=
3V, I
=
100
µ
A
D
R
R
DS(on)
Ω
5
I
D
=
10mA, V
GS
=
4V
=
1mA, V
GS
=
2.5V
Static drain-source on-state
resistance
DS(on)
Ω
−
7
13
−
I
D
|Y
fs
|
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
20
−
−
mS
pF
pF
pF
ns
V
V
V
DS
=
3V, I
DS
=
5V
GS
=
0V
D
=
10mA
C
iss
oss
rss
d(on)
13
9
−
C
−
−
−
−
−
−
C
4
f
=
1MHz
t
t
15
I
D
=
10mA, V
V
t
r
−
−
−
35
80
80
−
−
−
ns
ns
ns
V
GS
=
5
Turn-off delay time
Fall time
d(off)
R
L
=
5
=
1
t
f
R
z
Electrical characteristic curves
0.15
200m
5
1
V
DS
=3V
=0.1mA
V
DS
=3V
4V
100m
50m
I
D
Pulsed
3V
Ta=25
°
C
Pulsed
Pulsed
3.5V
20m
10m
5
0.1
2.5V
1m
Ta=125
0.05
5
°
C
C
C
0.5
0
2V
5m
0.2m
0.1m
V
2
GS
=1.5V
3
0
−
50
−
25
0
25
50
75 100
125 150
0
1
3
0
1
2
4
CHANNEL TEMPERATURE
: Tch (
°
C
)
DRAIN-SOURCE VOLT
V
DS
)
GATE
OURCE VOLTAGE
: V
GS
(V)
Fig.1 Typical
output
rac
ristics
Fig.3 Gate
threshold voltage vs.
channel temperature
Fig.2 T
pica
transfer characteristics
15
50
Ta=25
°
C
Pulsed
V
GS
=2.5V
ulsed
Pulsed
Ta=125
°
C
75
°
C
Ta=125
°
C
0
10
5
20
10
5
25
°
C
75
°
C
25
°
C
−
25
°
C
−
25
°
C
10
5
2
2
I
D
=0.1A
1
1
I
D
=0.05A
0.5
0.001 0.002
0.5
0.001 0.002
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
5
10
15
20
DRAIN CURRENT
: I
D
(A)
DRAIN CURRENT
: I
D
(A)
GATE-SOURCE VOLTAGE
: V
GS
(V)
Fig.5 Static
drain-source on-state
Fig.4 Static
drain-source on-state
Fig.6 Static
drain-source
on-state resistance vs.
gate-source voltage
resistance vs. drain current (
ΙΙ
)
resistance vs.
drain current (
Ι
)
Rev.B
2/3
2SK3018
Transistor
200m
9
8
7
0.5
0.2
V
GS
=4V
V
DS
=3V
V
GS
=0V
Pulsed
Pulsed
Pulsed
100m
50m
Ta=
−
25
°
C
25
°
C
I
D
=100mA
0.1
20m
75
°
C
6
5
4
3
2
1
Ta=125
°
C
0.05
125
°
C
10m
5m
I
D
=50mA
75
°
C
2
0.02
0.01
2m
1m
0.005
0.5m
0.002
0.001
0.2m
0.1m
0
0.0001 0.0002
0.0005 0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
−
50
−
25
0
25
50
75 100
125 150
0
1
1.5
DRAIN CURRENT
: I
D
(A)
CHANNEL TEMPERATURE
: Tch (
°
C)
SOUR
AIN VOLTAGE
: V
SD
(V)
Fig.8 Forward
transfer
Fig.7 Static
drain-source on-state
resistance vs. channel
temperature
F
R
verse drain current vs.
admittance vs. drain current
ource-drain voltage
(
Ι
)
50
200m
1000
Ta
=25
°
C
Ta=25
°
C
Pulsed
Ta
C
V
V
DD
=5V
GS
=5V
=1M
100m
50m
500
V
GS
=0V
20
10
5
R
G
=10
Ω
200
Pulsed
C
iss
20m
10m
5m
V
GS
=4V
0V
50
t
r
C
oss
2m
1m
20
10
5
t
d(on)
C
rss
2
0.5m
0.2m
0.1m
0.
0.1 0.2
2
0.5
1
1
0
50
0.1 0.2
0.5
1
2
5
10 20 50
100
0
0.5
1
1.5
DRAIN-SO
E : V
DS
(V)
DRAIN CURRENT
: I
D
(mA)
SOURCE-DRAIN VOLTAGE
: V
SD
(V)
Fig.11 Typical
citance vs.
drain-sou
ce voltage
Fig.12 Switching
characteristics
Fig.10 Reverse drain curre
t vs.
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
source-drain voltag
ΙΙ
)
z
Switching c
racteristics measure
nt circuit
Pulse width
90%
50%
10%
50%
V
V
GS
DS
V
GS
I
D
V
DS
R
L
10%
D.U.T.
10%
90%
R
G
V
DD
90%
t
d(on)
t
r
t
f
t
d(off)
t
off
t
on
Fig.13 Switching
time measurement
circuit
Fig.14 Switching
time waveforms
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications fo
product described in this document are for reference only. Upon actual use, therefore, please reques
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples
tandard
use and operation. Please pay careful attention to the peripheral conditions when desi
cuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, de
ed
erein
are intended only as illustrations of such devices and not as the specificatio
r such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be
infringement of any
third party’s intellectual property rights or other proprietary rights, an
furt
assumes no liab
l
ty of
whatsoever nature in the event of any such infringement, or aris
fro
or connected with o
ate
to the use of such devices.
Upon the sale of any such devices, other than for buye
ht to use such device
self,
esell or
otherwise dispose of the same, no express or implied r
t o
license to pract
or
mmercially
exploit any intellectual property rights or other pr
ietary rights owne
rolled by
ROHM CO., LTD. is granted to any such buy
.
Products listed in this document are no antirad
on design.
The products listed in this document
des
ed to be used wi
inary electronic equipment or devices
(such as audio visual equipment, offic
utomation equipme
communications devices, electrical
appliances and electronic toys
Should you intend to use these p
ts with equipmen
es which require an extremely high level of
reliability and the malfu
tion
with would directly enda
er human life (such as medical instruments,
transportation equipme
a
ospace machine
, nuclear-reactor controllers, fuel controllers and other
safety devices),
e be sure to consult wi
our
ales representative in advance.
About
Control Order in Japan
Produ
described herein are t
jects of controlled goods in Annex 1 (Item 16) of Export
T
r
ade Control
Order in
an.
In case of export from Japa
lease confirm if it applies to “objective” criteria or an “informed” (by MITI clause)
n the basis of “catc
for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
