ROHM-Semicon-2SK3019TL

2SK3019  

Transistor  

2.5V Drive

 

Nch MOS

 

FET  

2SK3019  

z

Dimensions

(Unit : mm)  

z

Structure  

Silicon N-channel  

MOSFET  

EMT3  

0.

7  

1.6  

0.3  

0.55  

( )  

3

z

Applications  

( )  

2

( )  

1

Interfacing, switching (30

V

,

1

00mA)  

0.2  

0.2  

0.15  

0.5 0.5  

1.0  

(1)Source  

(2)Gate  

z

Features  

1) Low on-resistance.  

(3)Drain  

Abbreviated symbol : KN  

2) Fast switching speed.  

3) Low voltage drive (2.5V) makes this device ideal for  

portable equipment.  

4) Drive circuits can be simple.  

5) Parallel use is easy.  

z

Packaging specifications  

z

Equivalent circuit  

Package  

Code  

Taping  

TL  

Drain  

Type  

Basic ordering unit  

(pieces)  

300

0  

2SK3019  

Gate  

z

Absolute m

axim

um r

atin

gs

(

T

a

=25

°

C)  

∗

Gate  

Protection  

Diode  

Param

e

ter  

Drain-source vo

lta

ge  

Ga

te-s

ource voltage  

S

ymbo

l  

Limits  

30  

Unit  

V

Source  

V

DS

S  

GSS  

V

20  

V

∗

A pr

otection diode is included between the gate  

and the source terminals to protect the diode  

against static electricity when the product is in use.  

Use a protection circuit when the fixed voltages  

are exceeded.  

Contin

uou

s  

Pulsed  

I

D

100  

mA  

mA  

mW  

°

C  

Drai

n current  

1

∗

I

DP  

400  

2

∗

To

tal power dissipation  

Channel temperature  

P

D

150  

Tch  

150  

Storage temperature  

Tstg  

−

55 to

+

150  

°

C  

∗

1

Pw

≤

10

µ

s, Duty cycle

≤

1%  

∗

2

With each pin mounted on the recommended lands.  

z

Thermal resistance  

Parameter  

Channel to ambient  

Symbol  

Rth(ch-a)

∗  

Limits  

833  

Unit  

°

C / W  

∗

With each pin mounted on the recommended lands.  

Rev.C  

1/3  

2SK3019  

Transistor  

z

Electrical characteristics

(

T

a

=25

°

C)  

Symbol Min.  

Typ.  

−

Max.  

1

Unit  

µ

A  

V

Conditions  

V

GS

=

20V, V

DS

=

0V  

Parameter  

I

GSS  

(BR)DSS  

DSS  

−

30  

−

Gate-source leakage  

V

−

−

I

D

=

10

µ

A, V

GS

=

0V  

Drain-source breakdown voltage  

I

−

1.0  

1.5  

8

µ

A  

V

V

V

DS

=

30V, V

GS

=

0V  

Zero gate voltage drain curren  

t

V

GS(th)  

DS(on)  

DS(on)  

0.8  

−

−

DS

=

3V, I

=

100

µ

A  

D

Gate threshold voltage  

R

R

5

Ω

I

I

I

D

D

D

=

10mA, V

GS

=

4V  

=

1mA, V

GS

=

2.5V  

=

10mA, V

DS

=

3V  

DS

=

5V  

Static drain-source on-state  

resistance  

−

7

13  

−

Ω

|Y

fs  

|

20  

−

−

ms  

pF  

pF  

pF  

ns  

ns  

ns  

ns  

Forward transfer admittance  

Input capacitance  

Output capacitance  

Reverse transfer capacitance  

Turn-on delay time  

Rise time  

C

iss  

oss  

rss  

d(on)  

13  

9

−

V

V

C

−

−

GS

=

0V  

C

−

4

−

f

=

1MHz  

t

t

−

15  

35  

80  

80  

−

I

D

=

10m

A,

V

DD

5V  

t

r

−

−

V

GS

=

5

V  

d(off)  

−

−

Turn-off delay time  

Fall time  

R

L

=

500

Ω  

t

f

−

−

R

G  

=

10

Ω  

z

Electrical characteristic curves  

0.15  

200m  

2

1.5  

1

V

DS

=

3V  

V

DS

=

3V  

4V  

3V  

100m  

50m  

I

D

=

0.1mA  

Pulsed  

Ta

=

25

°

C  

Pulsed  

Pulsed  

3.5V  

20m  

10m  

5m  

0.1  

0.05  

0

2.5V  

2V  

2m  

1m  

Ta

=

125

°

C  

75

°

C  

25

°

C  

−

2

5

°

C  

0.5  

0

0.5m  

0.2m  

0.1m  

V

2

GS

=

1.5V  

0

1

3

4

5

−

50

−

25  

0

25  

50  

75 100

 

125 150  

3

0

1

2

4

DRAIN-SOURCE V

OLTAG

E :

V

DS

(V)  

CHANNEL TEMPERATURE

 

: Tch (

°

C)  

GA

T

E-SO

URCE VOLTAGE

 

: V

GS

(V)  

Fig.1 Typi

cal outp

ut characteristics  

Fig.2

Typ

ical transfer characteristics  

Fig.3 Gate

 

threshold voltage vs.  

channel temperature  

50  

50  

15  

V

GS

=

4V  

Ta

=

25

°

C  

Pulsed  

V

GS

=

2.5V  

Pulsed  

Pulsed  

Ta

=

125

°

C  

75

°

C  

Ta

=

125

°

C  

75

°

C  

2

0  

10  

5

20  

10  

5

25

°

C  

−

25

°

C  

25

°

C  

10  

5

−

25

°

C  

2

2

I

D

=

0.1A  

1

1

I

D

=

0.05A  

0.5  

0.001 0.002  

0.5  

0.001 0.002  

0

0.005  

0.01  

0.02  

0.05  

0.1  

0.2  

0.5  

0

5

10  

15  

20  

0.005  

0.01  

0.02  

0.05  

0.1  

0.2  

0.5  

DRAIN CURRENT

 

: I  

D

(A)  

GATE-SOURCE VOLTAGE

 

: V

GS

(V)  

DRAIN CURRENT

 

: I

D

(A)  

Fig.4 Static

 

drain-source on-state  

resistance vs. drain current (

Ι

)  

Fig.6 Static

 

drain-source  

on-state resistance vs.  

gate-source voltage  

Fig.5 Static

 

drain-source on-state  

resistance vs. drain current (

ΙΙ

)  

Rev.C  

2/3  

2SK3019  

Transistor  

9

8

7

0.5  

0.2  

200m  

V

GS

=

4V  

V

DS

=

3V  

V

GS

=

0V  

Pulsed  

Pulsed  

Pulsed  

100m  

50m  

Ta

=−

25

°

C  

25

°

C  

I

D

=

100mA  

0.1  

20m  

75

°

C  

6

5

4

3

2

1

Ta

=

125

°

C  

0.05  

125

°

C  

10m  

5m  

I

D

=

50mA  

75

°

C  

2

5

°

C  

−

25

°

C  

0.02  

0.01  

2m  

1m  

0.005  

0.5m  

0.002  

0.001  

0.2m  

0.1m  

0

−

50

−

25  

0

25  

50  

75 100

 

125 150  

0.0001 0.0002  

0.0005 0.001  

0.002  

0.005  

0.01  

0.02  

0.05  

0.1  

0.2  

0.5  

0

0.5  

1

1.5  

CHANNEL TEMPERATURE

 

: Tch (

°

C)  

DRAIN CURRENT

 

: I

D

(A)  

SOUR

CE-DRA

IN VOLTAGE

 

: V

SD

(V)  

Fig.7 Static

 

drain-source on-state  

resistance vs. channel  

temperature  

Fig.8 Forward

 

transfer  

Fi

g.9 Reverse

 

drain current vs.  

admittance vs. drain current  

source-drain voltage (

Ι

)  

200m  

50  

1000  

500  

Ta

=

25

°

C  

Ta

=

25

°

C  

Pulsed  

Ta

=

25

°

C  

t

f

V

V

DD

=

5V  

GS

=

5V  

f

=

1MH  

Z

100m  

50m  

V

G

S

=

0V  

t

d(off)  

20  

10  

5

R

G

=

10

Ω  

Pulsed  

200  

100  

C

iss  

20m  

10m  

5m  

V

GS

=

4V  

0V  

50  

C

oss  

t

r

2m  

1m  

20  

10  

5

t

d(on)  

C

rss  

2

0.5m  

1

0.2m  

0.1m  

0.

5  

0.1 0.2  

2

0.5  

1

2

5

10  

20  

50  

0.1 0.2  

0.5  

1

2

5

10 20 50  

100  

0

0.5  

1

1.5  

DRAIN-SO

URCE VOLTAG

E : V

DS

(V)  

DRAIN CURRENT

 

: I

D

(mA)  

SOURCE-DRAIN VOLTAGE

 

: V

SD

(V)  

Fig.11 Typical

 

capa

citance vs.  

drain-source voltage  

Fig.12 Switching

 

characteristics  

Fig.10 Reverse

 

drain curre

n

t vs.  

(See Figures 13 and 14 for  

the measurement circuit  

and resultant waveforms)  

source-drain volta

ge

(

ΙΙ

)  

z

Switching c

har

acteristics measure

men

t c

i

rcuit  

Pulse width  

90%  

50%  

10%  

50%  

V

GS  

V

V

GS  

DS  

I

D

V

DS  

R

L  

D.U.T.  

10%  

R

G  

10%  

90%  

V

DD  

90%  

t

d (on)  

t

r  

t

f

t

d (off)  

t

off  

t

on  

Fig.13 Switching

 

time measurement circuit  

Fig.14 Switching

 

time waveforms  

Rev.C  

3/3  

Notice  

N o t e s  

1) The

 

information contained herein is subject to change without notice.  

2) Before

 

you use our Products, please contact our sales representative and verify the latest specifica-  

tions :  

3) Although

 

ROHM is continuously working to improve product reliability and qualit

y

,

s

emicon-  

ductors can break down and malfunction due to various factors.  

Therefore, in order to prevent personal injury or fire arising from failure, please take safe

ty  

measures such as complying with the derating characteristics, implementing redun

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an

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fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall

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responsibility for any damages arising out of the use of our Poducts beyond the rating specifie

d b

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ROHM.  

4) Examples

 

of application circuits, circuit constants and any other information con

tained h

erein are  

provided only to illustrate the standard usage and operations of the Product

s. The

peripheral  

conditions must be taken into account when designing circuits for mass pro

ducti

on.  

5) The

 

technical information specified herein is intended only to sh

ow

the

typ

ic

al

functions of and  

examples of application circuits for the Products. ROHM does not g

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you, explicitly or implicitl

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,  

any license to use or exercise intellectual property or other righ

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parties. ROHM shall have no responsibility whatsoever for any d

ispute

arising out of the use of  

such technical information.  

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uip

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ts)

as

we

ll as the applica

ti

on

s

indicated in  

this document.  

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Products specified in this document are n

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esigned to be radiation

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requ

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bilit

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(as exemplified  

below), please contact and consult wit

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reasonable care to ensur

 

th

e

accuracy of the information contained

 

in this  

document. Ho

we

ver, ROHM does not warrants that such information is error-free, and ROHM  

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onsibility for any d

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mages arising from any inaccuracy or misprint of such  

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lease contact a  

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Pro

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A