ROHM-Semicon-BM64365S-VA
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D
a
tasheet
Inverter for motor control
600V IGBT Intelligent Power Module (IPM)
for low speed switching drive
BM64365S-VA
General Description
Key Specifications
BM64365S-VA is an Intelligent Power Module composed
of gate drivers, bootstrap diodes, IGB
T
s
, fly wheel
diodes.
IGBT Collector-Emitter Voltage V
CESAT
FWD Forward Voltage V
F
:
FWD Reverse Recovery Time t
rr
:
Module Case
T
e
mperature T
C
:
:
1.7V(Typ)
1.5V(Typ)
100ns(Typ)
-25 to +100°C
150°C
Features
Junction
T
e
mperature T
jmax
:
3phase DC/AC Inverter
600V/20A
Package
W(Typ) x D(Typ) x H(Typ)
38.0mm x 24.0mm x 3.5mm
Low Side IGBT Open Emitter
Built -in Bootstrap Diode
HSDIP25
High Side IGBT Gate Driver(HVIC):
SOI (Silicon On Insulator) Process,
Drive Circuit, High Voltage Level Shifting,
Current Limit for Bootstrap Diode,
Control Supply Under-Voltage Locked Out (UVLO)
Low Side IGBT Gate Driver(LVIC):
Drive Circuit, Short Circuit Current Protection (SCP),
Control Supply Under Voltage Locked Out (UVLO),
Thermal Shutdown (TSD)
Fault Signal(LVIC)
Corresponding to SCP (Low Side IGBT), TSD, UVLO
Fault
Input Interface 3.3
V
,
5
V Line
Application
HSDIP25
Low Speed Switching Drive of AC100 to 240Vrms(DC
Voltage: Less Than 400V) Class Motor
Low Speed Switching Drive of Compressor Motor for
Air Conditioner, Washing Machine, Refrigerator
Typical Application Circuit
2
3
4
VBU
+
+
+
VBV
24
P
VBW
23
U
HINU
HINV
HINW
HVCC
GND
5
6
7
8
9
22
V
M
+
21
W
20
NU
10
11
12
13
LINU
LINV
LINW
LVCC
5V
19
NV
14
FO
+
15V
15
16
18
CIN
NW
GND
Figure 1. Example of Application Circuit
○
Product structure: Semiconductor IC
○
This product is not designed for protection against radioactive rays
.
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Pin Configuration
TOP VIEW
17
18
NC
NW
GND
CIN
NV
NU
FO
12.6mm
LVCC
LINW
LINV
LINU
GND
HVCC
HINW
HINV
HINU
W
V
9.2mm
Tc
d
etecting point
U
P
VBW
VBV
VBU
NC
NC
1
25
Figure 2. Pin Configuration and
T
c
D
etecting Point
Pin Description
Pin No.
Pin Name
Function Pin
No. Pin
Name
Function
1
2
NC
No connection(GND potential)
U phase floating control supply
14
15
FO
Alarm output
Detecting of short circuit current
trip voltage
Ground
(Note 1)
No connection
(Note 2)
W phase low side IGBT emitter
V phase low side IGBT emitter
U phase low side IGBT emitter
W phase output
VBU
CIN
3
4
16
17
18
19
20
21
22
23
24
25
VBV
VBW
HINU
HINV
HINW
HVCC
GND
LINU
LINV
LINW
LVCC
V phase floating control supply
W phase floating control supply
U phase high side IGBT control
V phase high side IGBT control
W phase high side IGBT control
Control supply for HVIC
GND
NC
NW
NV
NU
W
5
6
7
8
Ground
(Note 1)
V
V phase output
9
10
11
12
13
U phase low side IGBT control
V phase low side IGBT control
W phase low side IGBT control
Control supply for LVIC
U
U phase output
P
Inverter supply
No connection
(Note 2)
NC
(Note 1) Two GND pins (9 & 16pin) are connected inside IPM, please connect one pin (16pin is recommended) to the 15V power supply GND outside and
leave the other open.
(Note 2) NC pins (17 & 25pin) are not electrically connected to any other potential inside.
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Block Diagram
P
U
VBU
VBV
VBW
24
23
2
3
4
High Side
Gate Driver
(HVIC)
V
22
21
HINU
HINV
HINW
HVCC
GND
5
6
7
8
9
W
LINU
LINV
LINW
LVCC
10
11
12
13
NU
NV
20
19
18
Low Side
Gate Driver
(LVIC)
FO
14
CIN
15
16
GND
NW
Figure 3. Block Diagram
Description of Block
1) High Side IGBT Drive (HVIC, Bootstrap Diode)
High voltage level shifting circuit drives high side IGB
T
.
Built-in bootstrap diode and current limit function for bootstrap diode enable HVIC to drive high side IGBT without
external component (bootstrap diode, resistor). There is under-voltage-locked-out (UVLO) function for floating control
power supply.
2) Low Side IGBT Drive (LVIC)
There is short circuit current protection (SCP), under-voltage locked out (UVLO) for control power supply LVCC,
thermal shutdown (TSD) function. Alarm signal (FO) will output when these protection circuits work.
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Absolute Maximum Ratings (Unless otherwise specified, Tj=25°C)
Inverter Part
Item
Supply Voltage
Symbol
V
P
Ratings
450
Unit
V
Conditions
Applied between P-NU,N
V
,
NW
Applied between P-NU,N
V
,
NW
Supply Voltage(Surge)
V
P(surge)
V
CES
I
C
500
V
Collector-Emitter Voltage
600
V
DC
Collector Current
PEAK
±20
(Note 1)
±40
(Note 1)
41
A
T
C
=25°C
I
CP
A
T
C
=25°C, less than 1ms
T
C
=25°C, per 1 chip
Collector Power Dissipation
P
C
W
°C
Junction
T
e
mperature
T
jmax
150
(Note 1) Do not, however exceed P
C
, ASO.
Control part
Item
Symbol
V
CC
Ratings
20
Unit
V
Conditions
Control Power Supply
Floating Control Power Supply
Applied between HVCC-GND, LVCC-GND
Applied between VBU-U, VBV-V, VBW-W
V
BS
20
V
Applied between HINX, LINX-GND
(X=U,V,W)
Control Input Voltage
V
IN
-0.5 to V
CC
+0.5
V
Fault Output Supply Voltage
Fault Output Current
V
FO
I
FO
-0.5 to V
CC
+0.5
1
V
mA
V
Applied between FO-GND
Sink current at FO pin
Current Sensing Input Voltage
V
CIN
-0.5 to +7.0
Applied between CIN-GND
Bootstrap diode part
Item
Symbol
V
RB
Ratings
600
Unit
V
Conditions
Reverse Voltage
Junction
T
e
mperature
T
jmaxD
150
°C
Total system
Item
Symbol
V
P(PROT)
Ratings
400
Unit
V
Conditions
Self Protection Supply Voltage
(SCP Capability)
V
CC
=13.5 to 16.5
V
,
I
nverter part
T
j
=125°C, non-repetitive, less than 2µs
Measurement point of T
C
is provided
in Figure 2
Module Case
T
e
mperature
Storage
T
e
mperature
T
C
-25 to +100
-40 to +125
°C
°C
T
stg
Sinusoidal, 60Hz, AC 1minute,
between connected all pins and heat sink
plate
Isolation Voltage
V
iso
1500
V
rms
Thermal resistance
Limit
Item
Symbol
Unit
Conditions
Min
Typ
Max
3.0
R
th(j-c)_IGBT
R
th(j-c)_FWD
–
–
–
–
°C /W
°C /W
Inverter IGBT(1/6 module)
Inverter FWD(1/6 module)
Junction to Case Thermal
Resistance
(Note 2)
3.9
(Note 2) Grease with good conductivity and high reliability should be applied evenly with +100 to +200µm on the contacting surface of IPM and heat sink. Use
a torque wrench to fasten up to the specified torque rating. The contacting thermal resistance between IPM case and heat sink is determined by the
thickness and the thermal conductivity of the applied grease.
Caution:
Operating the IPM over the absolute maximum ratings may damage the IPM. The damage can either be a short circuit between pins or an open
circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IPM is
operated over the absolute maximum ratings.
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Recommended Operating Conditions
Limit
Typ
Item
Symbol
Unit
Conditions
Min
0
Max
400
Supply Voltage
V
P
300
V
V
Applied between P-NU,N
V
,
NW
Applied between
HVCC-GND, LVCC-GND
Applied between
VBU-U, VBV-V, VBW-W
Control Power Supply
V
CC
13.5
13.0
-1
15.0
15.0
–
16.5
18.5
+1
Floating Control Power Supply
Control Power Supply Variation
V
BS
V
⊿
V
CC
⊿
V
BS
V/µs
Control Input Voltage
V
IN
0
0
–
–
5.5
5.5
V
V
Current Sensing Input Voltage
V
CIN
Blanking Time for Preventing
Arm-short
t
dead
1.5
–
–
µs
For each input signal
PWM Input Frequency
f
PWM
–
–
–
–
–
–
10
–
kHz
µs
T
C
≤
100°C, T
j
≤
125°C
PW
ONH
PW
OFFH
PW
ONL
PW
OFFL
0.8
0.8
2.5
0.8
High Side IGBT
Minimum Input Pulse Width
(Note1)
–
µs
–
µs
Low Side IGBT
Minimum Input Pulse Width
(Note1)
–
µs
Voltage Variation Between
GND- NU, N
V
, NW
Between GND-NU, N
V
, NW
(Including surge voltage)
V
N
-5
–
+5
V
Junction
T
e
mperature
T
j
-25
–
+125
°C
(Note 1) IPM might not respond if the input signal pulse width is less than PW
ON
, PW
OFF
.
Electrical Characteristics (Unless otherwise specified, Tj=25°C, V
CC
=V
BS
=15
V
,
V
P
=300V)
Inverter Part
Limit
Item
Symbol
V
CESAT
Unit
Conditions
Min
Typ
1.70
0.90
–
Max
2.15
1.20
100
2.00
–
–
V
V
I
C
=20A
I
C
=2A
Collector-Emitter Saturation Voltage
–
Collector-Emitter Cut-off Current
FWD Forward Voltage
I
CES
V
F
–
µA
V
V
CE
=V
CES
–
1.50
100
0.90
0.20
1.30
0.45
1.70
0.30
0.95
0.40
I
F
=20A
FWD Reverse Recovery Time
t
rr
–
ns
µs
µs
µs
µs
µs
µs
µs
µs
Inductive Load, I
C
=20A
Inductive Load, I
C
=20A
Inductive Load, I
C
=20A
Inductive Load, I
C
=20A
Inductive Load, I
C
=20A
Inductive Load, I
C
=20A
Inductive Load, I
C
=20A
Inductive Load, I
C
=20A
Inductive Load, I
C
=20A
High Side IGBT Turn on Delay Time
High Side IGBT Turn on Switching Time
High Side IGBT Turn off Delay Time
High Side IGBT Turn off Switching Time
Low Side IGBT Turn on Delay Time
Low Side IGBT Turn on Switching Time
Low Side IGBT Turn off Delay Time
Low Side IGBT Turn off Switching Time
t
onH
0.50
1.40
–
t
c(on)H
t
offH
t
c(off)H
t
onL
t
c(on)L
t
offL
–
–
2.00
–
–
0.80
2.50
–
–
–
–
1.45
–
t
c(off)L
HINX
LINX
50%
50%
t
rr
t
off
t
on
t
doff
t
don
I
C
V
CE
90%
t
f
90%
10%
10%
10%
t
c(off)
10%
t
c(on)
Figure 4. Switching Time Definition
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Control part
Limit
Typ
Item
Symbol
Unit
Conditions
Min
Max
Whole
VCC Circuit Current 1
VCC Circuit Current 2
VBS Circuit Current 1
VBS Circuit Current 2
I
CC1
I
CC2
I
BS1
I
BS2
–
–
–
–
0.70
0.90
0.15
0.15
1.60
2.00
0.35
0.35
mA
mA
mA
mA
VIN=0V
VIN=5V
VIN=0V
VIN=5V
Control Input(HINU,HIN
V
,
HINW,LINU,LINV,LINW)
H Level Input Current
L Level Input Current
H Level Input Threshold Voltage
L Level Input Threshold Voltage
Input Hysteresis Voltage
Short Circuit Current Protection
CIN Input Bias Current
Trip Voltage
I
INH
I
INL
0.7
-10
–
1.0
1.5
mA
µA
V
V
IN
=5V
V
IN
=0V
–
–
2.6
–
V
INH
V
INL
V
HYS
–
–
0.8
–
V
0.25
–
V
I
CIN
-2
–
–
µA
V
CIN=0V
V
SC
0.43
0.48
0.53
Under Voltage Locked Out
VCC Trip Voltage
V
CCUVT
V
CCUVR
V
BSUVT
V
BSUVR
10.5
11
11.5
12
12.5
13
V
V
V
V
VCC Release Voltage
VBS Trip Voltage
10
11
12
VBS Release Voltage
Thermal Shutdown
Trip
T
e
mperature
10.5
11.5
12.5
T
SDT
100
–
130
20
–
–
°C
°C
Monitor LVIC temperature
Monitor LVIC temperature
Hysteresis
T
e
mperature
Fault Output(FO)
T
SDHYS
Output low Voltage
V
FO
I
FOLEAK
t
FO
–
–
–
–
–
0.95
10
–
V
I
FO
=1mA
V
FO
=5V
Leak Current
µA
µs
Output Pulse Width
20
Bootstrap Diode Part
Limit
Typ
Item
Symbol
V
FB1
Unit
V
Conditions
Min
0.3
Max
0.9
I
FB
=1mA
0.6
2.0
Voltage drop between
HVCC-VBX (X=U,V,W)
I
FB
=100mA
Voltage drop between
HVCC-VBX (X=U,V,W)
Forward Voltage
V
FB2
1.1
2.9
V
Reverse Current
I
RB
t
rrB
–
–
–
10
–
µA
ns
V
RB
=600V
I
FB
=0.1A
Reverse Recovery Time
80
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111
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BM64365S-VA
Mechanical Characteristics And Ratings
Limit
Item
Unit
Following Standard
–
Conditions
Min
Typ
Max
0.78
Mounting Screw M3
(Note 1)
Mounting
T
o
rque
0.59
0.69
N
･
m
Recommended 0.69N
･
m
(Note 2)
Load
Pin Pulling Strength
Pin Bending Strength
10
2
–
–
–
–
s
EIAJ-ED-4701/400
EIAJ-ED-4701/400
Control Pin:4.9N
Power Pin:9.8N
Load
Control Pin: 2.45N
Power Pin:4.9N
90deg. Bend
times
Weight
–
10
–
–
g
–
–
Measurement point
Heat Sink Flatness
0
+200
µm
is provided in Figure 6.
(Note 1) Plain washers (ISO 7089 to 7094) are recommended.
(Note 2) When installing a module to a heat sink, excessive uneven fastening force might apply stress to inside chips or ceramic of heat sink plate, which will
lead to a broken or cracked or degraded device. An example of recommended fastening sequence is shown in Figure 5. The temporary fastening
torque is set to 20 to 30% of the maximum torque rating. Evenly apply thermally-conductive grease with 100µm to 200µm thickness over the contact
surface between the module and the heat sink. Also, pay attention not to have any dirt left on the contact surface between the module and the heat
sink.
2
T
e
mporary fastening
：
1
→
2
Permanent fastening
：
1
→
2
1
Figure 5. Example of Recommended Fastening Sequence
TOP VIEW
(+)
(+)
Figure 6. Measurement Point of Heat Sink Flatness
© 2014 ROHM Co., Ltd. All rights reserved.
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Typical Performance Curve
200
175
150
125
100
75
500
Tj=25℃
V
CC
=15V
T
j=25℃
V
CC
=15V
400
300
200
100
0
50
25
0
0.0
0.5
1.0
1.5
V
F
[V]
2.0
2.5
3.0
0
3
6
9
12
15
V
F
[V]
Figure 7. I
F
vs V
F
Figure 8. Magnification of Figure 7
Characteristic of Bootstrap Diode I
F
-V
F
Curve
Between HVCC-VBX pin (X=U,V,W)
1.0
0.8
0.6
0.4
0.2
0.0
T
j=25℃
V
CC
=15V
0.0
0.2
0.4
0.6
I
FO
[mA]
0.8
1.0
Figure 9. V
FO
vs I
FO
(Characteristic of FO pin V
FO
-I
FO
Curve)
TSZ02201-0747AB500120-1-2
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Timing Chart
1) Short Circuit Current Protection (protection with the external shunt resistor and RC filter)
a1. Normal operation: IGBT ON and outputs current I
C.
a2. Short circuit current detection (SCP trigger)
It is recommended to set RC time constant of 1.0 to 2.0µs so that IGBT shuts down within 2.0µs when SCP is triggered.
a3. All low side IGBT
’
s gates are shut down (soft turn off).
a4. All low side IGB
T
s
t
urn off.
a5. FO outputs for t
FO
=20µs (Min).
a6. LIN=L
a7. LIN=H, but all IGB
T
s
k
eep OFF during SCP=H.
a8. FO finishes output , but IGB
T
s don’
t turn on until inputting the next ON signal(LIN=L
→
H)
IGBT of each phase can return to normal state by inputting ON signal to each phase.
a9. Normal operation: IGBT ON and outputs current I
C
.
LIN
SCP
a6
a7
a8
SET
a3
RESET
a9
IGBT Gate
a2
SCP Trip Current
a1
a4
Ic
SCP Trip Voltage
Delay by RC Filter
Shunt Resistor Voltage
FO
a5
Figure 10. SCP Timing Chart
Notice
SCP works only for low side IGBT only.
Please select the external shunt resistance such that the SCP trip current is less than 1.7 times of the collector current
rating I
c
(DC).
In case of SCP trip and FO output, please stop controlling IPM quickly to avoid the abnormal state.
TSZ02201-0747AB500120-1-2
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© 2014 ROHM Co., Ltd. All rights reserved.
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2) Control Supply (LVCC) Under Voltage Locked Out (UVLO)
b1 Control supply(LVCC) voltage exceeds UVLO release level (V
CCUVR
), but IGBT turns on by the next ON signal (LIN=L
→
H).IGBT of each phase can return to normal state by inputting ON signal to each phase.
b2 Normal operation: IGBT ON and outputs current I
C.
b3 LVCC drops to UVLO trip level (V
CCUVT
).
b4 All low side IGB
T
s
t
urn off in spite of control input condition.
b5 FO outputs for t
FO
=minimum 20µs, but output is extended while LVCC is below V
CCUVR.
b6 LVCC reaches V
CCUVR
.
b7 Even if LVCC reaches V
CCUVR
during LIN=H, IGB
T
s don’
t turn on until inputting the next ON signal (LIN=L
→
H).
b8 Normal operation: IGBT ON and outputs current I
C.
LIN
b7
UVLO
RESET
SET
b3
RESET
b1
b6
V
CCUVR
V
CCUVT
LVCC
b2
b8
b4
b5
Ic
FO
Figure 11. LVCC UVLO Timing Chart
3) Control supply (VBS) Under Voltage Locked Out (UVLO)
c1 Control supply(VBS) voltage exceeds UVLO release level (V
BSUVR
), but IGBT turns on by the next ON signal (HIN=L
→
H).
c2 Normal operation: IGBT ON and outputs current I
C.
c3 VBS drops to UVLO trip level (V
BSUVT
).
c4 Only IGBT of the corresponding phase turns off in spite of control input signal, there is no FO signal output.
c5 VBS reaches V
BSUVR
.
c6 Even if VBS reaches V
BSUVR
during HIN=H, IGB
T
s don’
t turn on until inputting the next ON signal (HIN=L
→
H).
c7 Normal operation: IGBT ON and outputs current I
C.
HIN
c6
UVLO
RESET
V
BSUVR
SET
c3
RESET
c1
c5
VBS
V
BSUVT
c2
c7
c4
Ic
FO=H
FO
Figure 12. VBS UVLO Timing Chart
TSZ02201-0747AB500120-1-2
12.Sep.2014 Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
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4) Thermal Shutdown (TSD), monitoring LVIC temperature
d1 Normal operation: IGBT ON and outputs current I
C.
d2 LVIC temperature (T
j
) exceeds thermal shutdown trip level (T
SDT
).
d3 All low side IGB
T
s
t
urn off in spite of control input condition.
d4 FO outputs for t
FO
=20µs (Min),
but output is extended while T
j
is above thermal shutdown release level (T
SDT
-T
SDHYS
).
d5 T
j
drops to T
SDT
-T
SDHYS
d6 Even if T
j
reaches T
SDT
-T
SDHYS
during LIN=H, IGB
T
s don’
t turn on until inputting the next ON signal (LIN=L
→
H).
IGBT of each phase can return to normal state by inputting ON signal to each phase.
d7 Normal operation: IGBT ON and outputs current I
C.
LIN
d6
TSD
SET
d2
RESET
T
SDT
d5
T
SDT
-T
SDHYS
T
j
(LVIC)
d1
d7
d3
d4
Ic
FO
Figure 13. TSD Timing Chart
Notice
1) In case of TSD trip and FO output, please stop controlling IPM quickly to avoid the abnormal state.
2) If the cooling system is in abnormal state (e.g. heat sink comes off, fixed loosely, or cooling fan stops) when TSD trips,
don
’
t reuse IPM. This may cause the junction temperature of power chips to exceed its maximum rating of T
jmax
(150°C).
3) TSD function detects LVIC temperature, so it cannot respond to rapid temperature rise of power chip. Therefore, TSD
will not work properly in the case of rapid temperature rise like motor lock or over current.
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Application Example( one shunt resistor drive)
Bootstrap negative electrodes should be
connected to U,
V
, W pins directly and
separated from the main output wires.
P
C1 D1 C2
+
VBU
VBV
VBW
24
2
3
4
U
+
+
23
High Side
Gate Driver
(HVIC)
V
22
M
HINU
HINV
HINW
HVCC
GND
5
6
7
8
9
+
W
C4
21
C2
LINU
LINV
LINW
LVCC
10
11
12
13
Long wiring here might
cause short circuit failure.
NU
20
C
5V
C2
Low Side
Gate Driver
(LVIC)
Shunt
R1
C3
Resistor
FO
NV
14
19
D
N
+
CIN
15V
D1
15
16
GND
NW
18
B
R2
C5
A
Long wiring here might cause SCP level fluctuation
and malfunction.
Figure 14. Example of Application Circuit
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Selection of Components Externally Connected (Refer to Figure 14)
1) VBU, VB
V
,
V
BW pin
・
The bypass capacitor(good temperature, frequency characteristic electrolytic type C1: 22µF to 100µF) should be mounted
as close as possible to the pin in order to prevent malfunction or destruction due to switching noise and power supply
ripple. In addition, for the purpose of reducing of the
power supply’s impedance in wide
frequency bandwidth, ceramic
capacitor (good temperature, frequency and DC bias characteristic ceramic type C2: 0.1µF to 0.22µF) should also be
mounted.
・
Zenner diode D1(1W) should be mounted between each pair of control supply pins to prevent surge destruction.
・
Line ripple voltage should meet dV/dt
≤
1V/µs, V
ripple
≤
2V
p-p.
・
The wiring from U, V, W pin should be as thick and as short as possible. They should be connected directly and separated
from the main output wires.
2) HVCC, LVCC pin
・
The bypass capacitor(good temperature, frequency characteristic electrolytic type C3) should be mounted as close as
possible to the pin in order to prevent malfunction or destruction due to switching noise and power supply ripple. In
addition, for the purpose of reducing of the
power supply’s impedance in wide frequency bandwidth,
ceramic capacitor
(good temperature, frequency and DC bias characteristic ceramic type C2: 0.1µF to 0.22µF) should also be mounted.
・
Zenner diode D1(1W) should be mounted between each pair of control supply pins to prevent surge destruction.
・
Line ripple voltage should meet dV/dt
≤
1V/µs, V
ripple
≤
2V
p-p.
3) P pin
・
T
o
p
revent surge destruction, the wiring between the smoothing capacitor and
P
, N
p
ins should be as short as possible.
・
Snubber capacitor(C4: 0.1µF to 0.22µF) should be mounted between the P-N pin.
4) Control Input pin (HINU, HIN
V
,
H
INW, LINU, LINV, LINW)
・
The wiring should be as short as possible to prevent malfunction.
・
Input drive is active-high type. There is a 3.3k
Ω
(Min) pull-down resistor in the input circuit of IPM. When using RC coupling
circuit, make sure the input signal level meet the input threshold voltage.
・
Dead time of input signal should be more than specified value.
5) FO pin
・
FO output is open drain type. It should be pulled up to control power supply(e.g. 5
V
,
1
5V) by a resistor that makes I
FO
up
to 1mA.I
FO
is estimated roughly by the formula of control power supply voltage divided by pull-up resistance(R1). In the
case of pulled up to 5
V
,
R
1=10k
Ω
is recommended.
6) CIN pin
・
RC filter(R2, C5) should be mounted as close as possible to the pin in order to prevent malfunction by recovery current or
switching noise. It is recommended to select tight tolerance, temp-compensated type for RC filter (R2, C5).
The time constant R2C5 (1.0µs to 2.0µs is recommended) should be set so that SCP current is shut down within 2µs.
Please confirm operation on the actual application since SCP shutdown time changes depending on the PCB wiring
pattern.
・
The point D at which the wiring to CIN filter is divided should be near the pin of shunt resistor. NU, N
V
, NW pin should be
connected at near NU, N
V
, NW pin.
・
T
o
p
revent malfunction, the wiring of B should be as short as possible.
7) GND pin
・
Two GND pins (9 & 16 pin) are connected inside IPM. Please connect one pin (16 pin is recommended.) to the 15V power
supply GND outside and leave the other open.
・
If control GND is connected with power GND by common broad pattern, it may cause malfunction by power GND
fluctuation. It is recommended to connect control GND and power GND at only a point N (near the pin of shunt resistor).
・
T
o
p
revent malfunction, the wiring of A should be as short as possible.
8) NU, N
V
, NW pin
・
When operating with one-shunt resistor, please short the three pins(NU, N
V
, N
W
). In addition, to prevent malfunction, the
wiring of C should be as short as possible.
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9) One-shunt Resistor Drive
NU, N
V
, NW should be all connected each other at nearest pins.
Wiring inductance should be less than 10nH.
(Inductance of a copper pattern with length=17mm, width=3mm is about 10nH.)
IPM
NU
NV
N
GND
RC filter
NW
Wiring from GND pin should be connected close
to the pin of shunt resistor.
Wiring from shunt resistor to RC filter should be connected
near the pin of shunt resistor.
Low inductance shunt resistor like surface mounted (SMD) type is recommended.
Figure 15. Wiring Pattern around the Shunt Resistor when Operating with One-shunt Resistor
10) Three-shunt Resistors Drive
・
It is not recommended to input the voltage of each shunt resistor directly to the CIN pin when IPM is operated with three
shunt resistor. In that case, it is necessary to use the external protection circuit as below.
・
It is necessary to set the time constant R
u
f
f
(1.0µs to 2.0µs is recommended) of external comparator input so that IGBT
stops within 2µs when short circuit occurs. Please confirm operation on the actual application since SCP shutdown time
changes depending on the PCB wiring pattern.
・
It is recommended for the threshold voltage VREF to be set to the same rating of short circuit trip level(V
SC
=0.48V(Typ))
・
Please select the external shunt resistance such that the SCP trip current is less than 1.7 times of the collector current
rating I
c
(DC).
・
T
o
p
revent malfunction, the wiring of A, B, C should be as short as possible.
・
OR output high level when protection works should be 0.53V(maximum V
SC
rating) to 7V(CIN absolute maximum rating).
Wiring inductance should be less than 10nH.
(Inductance of a copper pattern with length=17mm, width=3mm is about 10nH.)
External protection circuit
IPM
C
NU
NV
Wiring from GND pin should be connected close
to the pin of shunt resistor.
N
CIN
GND
NW
A
R
f
B
–
+
5V
C
f
Wiring from shunt resistor to
RC filter should be connected
closet to the pin of shunt
resistor.
–
+
OR output
–
+
VREF
Comparator
(Open collector type)
Figure 16. Wiring Pattern around the Shunt Resistor when operating with Three-shunt Resistors
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I/O Equivalence Circuit
LVCC
HINX
5k
Ω
FO
LVCC
LINX
HVCC
5k
Ω
VBX
P
CIN
X
LVCC
NX
GND
Figure 17. Input / Output Equivalent Circuit (X=U,
V
,
W
)
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Operational Notes
1.
2.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IPM.
T
a
ke precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IPM
’
s power
supply pins.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
4.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip.
6.
7.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IPM can be approximately
obtained. The electrical characteristics are guaranteed under the conditions of each parameter.
Inrush Current
When power is first supplied to the IPM, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IPM
has more than one power suppl
y
.
T
herefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.
8.
9.
Operation Under Strong Electromagnetic Field
Operating the IPM in the presence of a strong electromagnetic field may cause the IPM to malfunction.
Testing on Application Boards
When testing the IPM on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IPM to stress. Always discharge capacitors completely after each process or step. The IPM
’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process.
T
o
p
revent damage from static discharge, ground the IPM during assembly and use similar precautions
during transport and storage.
10. Inter-pin
Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IPM on the PCB. Incorrect mounting may result
in damaging the IPM. Avoid nearby pins being shorted to each other especially to ground, power supply and output
pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
11. Unused
Input Pins
Input pins of an IPM are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IPM. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
12. Area
of Safe Operation (ASO)
Operate the IPM such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).
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Ordering Information
B M 6
4
3
6
5
S
–
xx
Package
S: HSDIP25
Packaging and Forming Specification
-VA: Tube, Long pin type
Part Number
Marking Diagram
BOTTOM VIEW
Part Number Marking
LOT Number
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Physical Dimension, Tape and Reel Information
Package Name
HSDIP25
© 2014 ROHM Co., Ltd. All rights reserved.
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Revision History
Date
Revision
001
Changes
12.Sep.2014
New Release
TSZ02201-0747AB500120-1-2
12.Sep.2014 Rev.001
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Notice
Precaution on using ROHM Products
1. Our
Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.).
If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
(Note 1)
, transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (
“
Specific Applications
”
), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM
’
s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASS
Ⅲ
CLASS
Ⅳ
CLASS
Ⅱ
b
CLASS
Ⅲ
CLASS
Ⅲ
CLASS
Ⅲ
2. ROHM
designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our
Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arisi
ng from the use of any ROHM’s
Products under any
special or extraordinary environments or conditions.
If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl
2
,
H
2
S, NH
3
, SO
2
, and NO
2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The
Products are not subject to radiation-proof design.
5. Please
verify and confirm characteristics of the final or mounted products in using the Products.
6. In
particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate
Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8. Confirm
that operation temperature is within the specified range described in the product specification.
9. ROHM
shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When
a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In
principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-GE
Rev.003
© 2013 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If
change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You
agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use.
Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document.
ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product
performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the
Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the
temperature or humidity exceeds those recommended by ROHM
[c] the
Products are exposed to direct sunshine or condensation
[d] the
Products are exposed to high Electrostatic
2. Even
under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store
/ transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use
Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM
’
s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1. All
information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2. No
license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1. This
document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The
Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In
no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The
proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-GE
Rev.003
© 2013 ROHM Co., Ltd. All rights reserved.
