ROHM-Semicon-DTA144TKAT146

Part #ROHM-Semicon-DTA144TKAT146
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ROHM-Semicon-DTA144TKAT146
DTA144T series  
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)  
Datasheet  
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Outline  
Parameter  
Value  
-50V  
VMT3  
EMT3  
V
CEO  
I
-100mA  
C
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R
47kΩ  
1
D
T
A
144TM  
(SC-105AA)  
D
A144TE  
S
T
-416(SC-75A)  
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UMT3  
SMT3  
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Features  
1) Built-In Biasing Resistor  
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2) Built-in bias resistors enable the configuration of  
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an inverter circuit without connecting external  
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input resistors (see inner circuit) .  
D
T
A
SO
-323
C-70)  
D
T
A
144TKA  
SO
T
-346(SC-59)  
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3) The bias resistors consist of thin-film resistors  
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with complete isolation to allow negative biasing  
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of the input. They also have the advantage of  
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completely eliminating parasitic effects.  
4) Only the on/off conditions need to be set  
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for operation, making the circuit design ea
y
.  
5) Complementary NPN Types: DTC144
s
ies  
6) Lead Free/RoHS Compliant.  
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ner circuit  
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Application  
B: BASE  
Switching circuit, I
erter circuit, Inte
e circuit,  
Driver circuit  
C: COLLECTOR  
E: EMITTER  
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ac
g specifications  
Basic  
Package  
size  
Taping  
code  
Reel size
 
Tape width  
Part No.  
Package  
ordering  
Marking  
(mm)  
(mm)  
unit.(pcs)  
DTA144TM  
VMT3  
EMT3  
UMT3  
SMT3  
1212  
1616  
2021  
2928  
T2L  
TL  
180  
180  
180  
180  
8
8
8
8
8000  
3000  
3000  
3000  
96  
96  
96  
96  
DTA144TE  
DTA144TUA  
DTA144TKA  
T106  
T146  
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© 2012 ROH
M
C
o., Ltd. All rights reserved.  
1/7  
20121023 – Rev.001  

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DTA144T series  
Datasheet  
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Absolute maximum ratings
(T

a

= 25°C)  
Parameter  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Values  
-50  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
-50  
V
-5  
V
-100  
15
mA  
DTA144TM  
DTA144TE  
Power dissipation  
150  
*1  
P

D  

mW  
DTA144TUA  
00  
DTA144TKA  
Junction temperature  
200  
T

j  

150  
℃
℃
T

Range of storage temperature  
-55
+150  
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Electrical characteristics
(T

a

= 25°C)  
Values  
Parameter  
Symbol  
Conditions  
Unit  
Min.  
-50  
Typ.  
Max.  
–
Collector-base breakdown  
voltage  

BO  

BV

CEO  

I =
 
-5
–
V
V
C
Collector-emitter breakdown  
voltage  
I =
 
-1mA  
-50  
–
–
C
BV

EBO  

BO  

= -50μA  
Emitter-base brea
wn
oltage  
Collector cut-off c
rent  
-5  
–
–
–
V
μA  
μA  
V
E
V
CB  
V
EB  
= -50V  
= -4V  
–
–
-0.5  
-0.5  
-0.3  
600  
61.1  
I

EBO  

Emitter cu
f current  
–
Collecto
itter saturation voltage  
V

CE(sat)

I /
 
I =
 
-5mA / -0.5mA  
–
–
C
B
h

FE  

R

1  

V
CE  
= -5V, I
 
= -1mA  
DC
urrent gain  
put resistance  
100  
32.9  
250  
47  
–
C
–
kΩ  
V
= -10V, I
 
= 5mA,  
E
CE  
*2  
f

T  

Transition frequency  
–
250  
–
MHz  
f = 100MHz  
*1 Each terminal mounted on a reference footprint  
*2 Characteristics of built-in transistor  
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© 2012 ROH
M
C
o., Ltd. All rights reserved.  
2/7  
20121023 – Rev.001  

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DTA144T series  
Datasheet  
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Electrical characteristic curves(Ta=25
℃
)  
Fig.1 Grounded emitter propagation characteristics  
Fig.2 Grounded emitter output characteristics  
Fig.3 DC Current gain vs. Collector C
rrent  
Fi
.4 Collector-emitter saturation voltage vs.  
Collector Current  
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© 2012 ROH
M
C
o., Ltd. All rights reserved.  
3/7  
20121023 – Rev.001  

DTA144T series  
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Datasheet  
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Dimensions  
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© 2012 ROH
M
C
o., Ltd. All rights reserved.  
4/7  
20121023 – Rev.001  

DTA144T series  
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Datasheet  
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Dimensions  
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© 2012 ROH
M
C
o., Ltd. All rights reserved.  
5/7  
20121023 – Rev.001  

DTA144T series  
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Datasheet  
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Dimensions  
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© 2012 ROH
M
C
o., Ltd. All rights reserved.  
6/7  
20121023 – Rev.001  

DTA144T series  
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Datasheet  
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Dimensions  
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© 2012 ROH
M
C
o., Ltd. All rights reserved.  
7/7  
20121023 – Rev.001  

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