ROHM-Semicon-DTC144TETL
| Part # | ROHM-Semicon-DTC144TETL |
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DTC144T series
Datasheet
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
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Outline
Parameter
Value
50V
VMT3
EMT3
V
CEO
I
100mA
C
ꢀ
ꢀ
R
47kΩ
1
DTC144TM
(SC-105AA)
144TE
S
T
-416(SC-75A)
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UMT3
SMT3
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Features
1) Built-In Biasing Resistor
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2) Built-in bias resistors enable the configuration of
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an inverter circuit without connecting external
ꢀ
input resistors (see inner circuit) .
DTC
A
SO
T
-32
C-70)
DTC144TKA
SO
T
-346(SC-59)
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3) The bias resistors consist of thin-film resistors
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with complete isolation to allow negative biasing
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of the input. They also have the advantage of
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completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
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for operation, making the circuit design eas
y
.
5) Complementary PNP Types: DTA144T s
ies
6) Complex transistors: UMH14N/ IMH14
ꢀ
EMH15/ IMH15A
(
NPN type
)
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ner circuit
7) Lead Free/RoHS Compliant.
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Application
B: BASE
Switching circuit, In
rter circuit,
nte
ce circuit,
Driver circ
C: COLLECTOR
E: EMITTER
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P
ckaging specifications
Basic
Package
size
Taping
code
Reel size
Tape width
Part No.
Package
ordering
Marking
(mm)
(mm)
unit.(pcs)
DTC144TM
VMT3
EMT3
UMT3
SMT3
1212
1616
2021
2928
T2L
TL
180
180
180
180
8
8
8
8
8000
3000
3000
3000
06
06
06
06
DTC144TE
DTC144TUA
DTC144TKA
T106
T146
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© 2012 ROH
M
C
o., Ltd. All rights reserved.
1/7
20121023 – Rev.001
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DTC144T series
Datasheet
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Absolute maximum ratings
(T
a
= 25°C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Values
50
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
50
V
5
V
100
mA
DTC144TM
15
DTC144TE
Power dissipation
150
*1
P
D
mW
DTC144TUA
00
DTC144TKA
Junction temperature
200
T
j
150
℃
℃
T
Range of storage temperature
-55
+150
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Electrical characteristics
(T
a
= 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
50
Typ.
Max.
–
Collector-base breakdown
voltage
BO
BV
CEO
I =
5
–
V
V
C
Collector-emitter breakdown
voltage
I =
1mA
50
–
–
C
BV
EBO
BO
= 50μA
Emitter-base brea
wn
oltage
Collector cut-off c
rent
5
–
–
–
V
μA
μA
V
E
V
CB
V
EB
= 50V
= 4V
–
–
0.5
0.5
0.3
600
61.1
I
EBO
Emitter cu
f current
–
Collecto
itter saturation voltage
V
CE(sat)
I /
I =
5mA / 0.5mA
–
–
C
B
h
FE
R
1
V
CE
= 5
V
, I
=
1
mA
C
DC
urrent gain
put resistance
100
32.9
250
47
–
–
kΩ
V
= 10
V
, I
= -5mA,
E
CE
*2
f
T
Transition frequency
–
250
–
MHz
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
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© 2012 ROH
M
C
o., Ltd. All rights reserved.
2/7
20121023 – Rev.001
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DTC144T series
Datasheet
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Electrical characteristic curves(Ta=25
℃
)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector C
rrent
Fi
.4 Collector-emitter saturation voltage vs.
Collector Current
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© 2012 ROH
M
C
o., Ltd. All rights reserved.
3/7
20121023 – Rev.001
DTC144T series
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Datasheet
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Dimensions
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© 2012 ROH
M
C
o., Ltd. All rights reserved.
4/7
20121023 – Rev.001
DTC144T series
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Datasheet
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Dimensions
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© 2012 ROH
M
C
o., Ltd. All rights reserved.
5/7
20121023 – Rev.001
DTC144T series
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Datasheet
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Dimensions
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© 2012 ROH
M
C
o., Ltd. All rights reserved.
6/7
20121023 – Rev.001
DTC144T series
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Datasheet
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Dimensions
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© 2012 ROH
M
C
o., Ltd. All rights reserved.
7/7
20121023 – Rev.001
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