ROHM-Semicon-DTC144TKAT146

Part #ROHM-Semicon-DTC144TKAT146
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ROHM-Semicon-DTC144TKAT146
DTC144T series  
Datasheet  
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)  
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Outline  
Parameter  
Value  
50V  
VMT3  
EMT3  
V
CEO  
I
100mA  
C
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R
47kΩ  
1
DTC144TM  
(SC-105AA)  
144TE  
S
T
-416(SC-75A)  
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UMT3  
SMT3  
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Features  
1) Built-In Biasing Resistor  
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2) Built-in bias resistors enable the configuration of  
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an inverter circuit without connecting external  
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input resistors (see inner circuit) .  
DTC
A  
SO
T
-32
C-70)  
DTC144TKA  
SO
T
-346(SC-59)  
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3) The bias resistors consist of thin-film resistors  
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with complete isolation to allow negative biasing  
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of the input. They also have the advantage of  
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completely eliminating parasitic effects.  
4) Only the on/off conditions need to be set  
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for operation, making the circuit design eas
y
.  
5) Complementary PNP Types: DTA144T s
ies  
6) Complex transistors: UMH14N/ IMH14
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EMH15/ IMH15A
(
NPN type
)  
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ner circuit  
7) Lead Free/RoHS Compliant.  
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Application  
B: BASE  
Switching circuit, In
rter circuit,
nte
ce circuit,  
Driver circ
C: COLLECTOR  
E: EMITTER  
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P
ckaging specifications  
Basic  
Package  
size  
Taping  
code  
Reel size
 
Tape width  
Part No.  
Package  
ordering  
Marking  
(mm)  
(mm)  
unit.(pcs)  
DTC144TM  
VMT3  
EMT3  
UMT3  
SMT3  
1212  
1616  
2021  
2928  
T2L  
TL  
180  
180  
180  
180  
8
8
8
8
8000  
3000  
3000  
3000  
06  
06  
06  
06  
DTC144TE  
DTC144TUA  
DTC144TKA  
T106  
T146  
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© 2012 ROH
M
C
o., Ltd. All rights reserved.  
1/7  
20121023 – Rev.001  

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DTC144T series  
Datasheet  
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Absolute maximum ratings
(T

a

= 25°C)  
Parameter  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Values  
50  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
50  
V
5
V
100  
mA  
DTC144TM  
15
DTC144TE  
Power dissipation  
150  
*1  
P

D  

mW  
DTC144TUA  
00  
DTC144TKA  
Junction temperature  
200  
T

j  

150  
℃
℃
T

Range of storage temperature  
-55
+150  
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Electrical characteristics
(T

a

= 25°C)  
Values  
Parameter  
Symbol  
Conditions  
Unit  
Min.  
50  
Typ.  
Max.  
–
Collector-base breakdown  
voltage  

BO  

BV

CEO  

I =
 
5
–
V
V
C
Collector-emitter breakdown  
voltage  
I =
 
1mA  
50  
–
–
C
BV

EBO  

BO  

= 50μA  
Emitter-base brea
wn
oltage  
Collector cut-off c
rent  
5
–
–
–
V
μA  
μA  
V
E
V
CB  
V
EB  
= 50V  
= 4V  
–
–
0.5  
0.5  
0.3  
600  
61.1  
I

EBO  

Emitter cu
f current  
–
Collecto
itter saturation voltage  
V

CE(sat)

I /
 
I =
 
5mA / 0.5mA  
–
–
C
B
h

FE  

R

1  

V
CE  
= 5
V
, I
 
=
1
mA  
C
DC
urrent gain  
put resistance  
100  
32.9  
250  
47  
–
–
kΩ  
V
= 10
V
, I
 
= -5mA,  
E
CE  
*2  
f

T  

Transition frequency  
–
250  
–
MHz  
f = 100MHz  
*1 Each terminal mounted on a reference footprint  
*2 Characteristics of built-in transistor  
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© 2012 ROH
M
C
o., Ltd. All rights reserved.  
2/7  
20121023 – Rev.001  

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DTC144T series  
Datasheet  
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Electrical characteristic curves(Ta=25
℃
)  
Fig.1 Grounded emitter propagation characteristics  
Fig.2 Grounded emitter output characteristics  
Fig.3 DC Current gain vs. Collector C
rrent  
Fi
.4 Collector-emitter saturation voltage vs.  
Collector Current  
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© 2012 ROH
M
C
o., Ltd. All rights reserved.  
3/7  
20121023 – Rev.001  

DTC144T series  
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Datasheet  
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Dimensions  
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© 2012 ROH
M
C
o., Ltd. All rights reserved.  
4/7  
20121023 – Rev.001  

DTC144T series  
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Datasheet  
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Dimensions  
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© 2012 ROH
M
C
o., Ltd. All rights reserved.  
5/7  
20121023 – Rev.001  

DTC144T series  
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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Datasheet  
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Dimensions  
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© 2012 ROH
M
C
o., Ltd. All rights reserved.  
6/7  
20121023 – Rev.001  

DTC144T series  
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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Datasheet  
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Dimensions  
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© 2012 ROH
M
C
o., Ltd. All rights reserved.  
7/7  
20121023 – Rev.001