ROHM-Semicon-DTD113EKT146
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DTD113EK
Datasheet
NPN 500mA 50V Digital
Transistors
(Bias Resistor Built-in Transistors)
l
Outline
SMT3
Parameter
Value
50V
OUT
V
CC
I
C(MAX.)
R
1
IN
500mA
1k
W
GND
DTD113EK
SOT-346 (SC-59)
R
2
1k
W
l
Features
l
Inner circuit
1) Built-In Biasing Resistors, R1 = R2 = 1k
W
.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors
(
see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary PNP Types :DTB113EK series
6) Lead Free/RoHS Compliant.
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Application
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
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Packaging specifications
Package
size
(mm)
Basic
ordering
unit (pcs)
Taping
code
Reel size
Tape width
Part No.
DTD113EK
Package
SMT3
Marking
F21
(mm)
(mm)
2928
T146
180
8
3,000
© 2012
ROHM Co., Ltd. All rights reserved.
2012.07 –
Rev.D
1/5
Data Sheet
DTD113EK
l
Absolute maximum ratings
(Ta = 25°C)
Parameter
Symbol
V
CC
Values
50
Unit
V
Supply voltage
V
IN
V
Input voltage
–
10 to
+
10
500
*1
mA
mW
°C
Collector current
I
C
*2
200
150
Power dissipation
Junction temperature
Range of storage temperature
P
D
T
j
T
stg
°C
–
55 to
+
150
l
Electrical characteristics
(Ta = 25°C)
Parameter
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
Conditions
Min.
–
Typ.
Max.
Unit
V
V
CC
= 5V,
I
O
= 100
m
A
V
O
= 0.3V,
I
O
= 20mA
I
O
/ I
I
= 50mA / 2.5mA
V
I
= 5V
–
–
0.5
–
Input voltage
3.0
–
Output voltage
Input current
0.1
–
0.3
7.2
0.5
–
V
mA
m
A
–
–
V
CC
= 50V,
V
I
= 0V
V
O
= 5V,
I
O
= 50mA
–
I
O(off)
G
I
Output current
DC current gain
Input resistance
Resistance ratio
–
–
33
0.7
0.8
–
R
1
1
1
1.3
1.2
k
W
–
R
2
/R
1
–
V
CE
= 10V,
I
E
=
–
50mA,
f = 100MHz
*1
Transition frequency
–
200
–
MHz
f
T
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
© 2012
ROHM Co., Ltd. All rights reserved.
2012.07 –
Rev.D
2/5
Data Sheet
DTD113EK
l
Electrical characteristic curves
(Ta = 25°C)
Fig.2 Output current vs. input voltage
Fig.1 Input voltage vs. output current
(ON characteristics)
(OFF characteristics)
OUTPUT CURRENT : I
O
[mA]
INPUT VOLTAGE : V
I(off)
[V]
Fig.4 DC current gain vs. output current
Fig.3 Output current
vs. output voltage
I
I
= 5.0mA 4.5mA 4.0mA
3.5mA
500
3.0mA
2.5mA
400
300
200
100
2.0mA
1.5mA
1.0mA
0A
Ta=25ºC
0
0
2
4
6
8
10
OUTPUT CURRENT : I
O
[mA]
OUTPUT VOLTAGE : V
O
[V]
© 2012
ROHM Co., Ltd. All rights reserved.
2012.07 –
Rev.D
3/5
Data Sheet
DTD113EK
l
Electrical characteristic curves
(Ta = 25°C)
Fig.5 Output voltage vs. output current
OUTPUT CURRENT : I
O
[mA]
© 2012
ROHM Co., Ltd. All rights reserved.
2012.07 –
Rev.D
4/5
Data Sheet
DTD113EK
l
Dimensions
(Unit : mm)
D
SMT3
A
c
Q
A3
e
b
x
S A
e
S
b2
Patterm of terminal position areas
MILIMETERS
MIN
1.00
0.00
INCHES
DIM
MAX
1.30
0.10
MIN
–
0
MAX
0.051
0.004
A
A1
A3
b
c
D
0.25
0.95
0.01
0.35
0.09
2.80
1.50
0.50
0.25
3.00
1.80
0.014
0.004
0.11
0.02
0.01
0.118
0.071
E
e
0.059
0.04
H
E
L1
Lp
Q
x
2.60
0.30
0.40
0.20
–
3.00
0.60
0.70
0.30
0.10
0.10
0.102
0.012
0.016
0.008
–
0.118
0.024
0.028
0.012
0.004
0.004
y
–
–
MILIMETERS
MAX
2.10
INCHES
0.08
DIM
MIN
MIN
MAX
e1
b2
l1
0.60
0.90
–
–
0.024
0.035
–
Dimension in mm/inches
© 2012
ROHM Co., Ltd. All rights reserved.
2012.07 –
Rev.D
5/5
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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examples of application circuits for the Products. ROHM does not grant you, explicitly or
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© 2012
ROHM Co., Ltd. All rights reserved.
R1120A
