ROHM-Semicon-EMX2T2R
| Part # | ROHM-Semicon-EMX2T2R |
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EMX2 / UMX2N / IMX2
General purpose transistor (dual transistors)
Datasheet
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Outline
Parameter
Tr1 and Tr2
50V
SO
T
-56
SO
T
-36
V
CEO
I
150mA
ꢀ
C
ꢀ
ꢀ
ꢀ
EMX2
UMX2N
(UMT6)
(EMT6)
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SO
T
-45
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Features
1) Two 2SC2412K chips in a EMT, UMT or
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SMT package.
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IMX2
(SMT6)
2) Mounting possible with EMT3, UMT3 or SMT3
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automatic mounting machines.
3) Transistor elements are independent,
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eliminating interference.
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Inner circuit
4) Mounting cost and area can be cut in half.
EMX2 / UMX2N
IMX2
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Application
GENERAL PURPOSE SMALL SIGNA
L
A
MPLIFIER
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Packaging specifications
Basic
ordering
Package
size
Taping Reel
size Tape
width
Part No.
Package
Marking
code
T2R
TR
(mm)
180
180
180
(mm)
unit.(pcs)
SOT-563
(EMT6)
EMX2
UMX2N
IMX2
1616
2021
2928
8
8
8
8000
X2
X2
X2
SOT-363
(UMT6)
3000
3000
SOT-457
(SMT6)
T108
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
1/8
20150825 – Rev.003
EMX2 / UMX2N / IMX2
Datasheet
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Absolute maximum ratings
(T
a
= 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Values
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
60
50
V
V
7
V
mA
150
*1 *2
P
D
EMX2/ UMX2N
IMX2
150
mW/Total
mW/Total
℃
Power dissipation
*1 *3
P
D
300
T
j
Junction temperature
150
T
stg
Range of storage temperature
-55 to +150
℃
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Electrical characteristics
(T
a
= 25°C)
<For Tr1 and Tr2 in common>
Values
Typ.
–
Parameter
Symbol
Conditions
I =
50μA
Unit
Min.
60
Max.
–
BV
CBO
BV
CEO
Collector-base breakdown voltage
V
V
C
Collector-emitter breakdown
voltage
I =
1mA
C
50
–
–
BV
EBO
I
CBO
I =
50μA
Emitter-base breakdown voltage
Collector cut-off current
7
–
–
–
–
–
–
V
nA
nA
mV
–
E
V
CB
= 60V
–
100
100
400
560
I
EBO
V =
7V
EB
Emitter cut-off current
–
–
Collector-emitter saturation voltage
V
CE(sat)
I =
50mA, I
= 5mA
C
B
h
FE
V
= 6
V
, I
=
1
mA
DC current gain
120
CE
CE
C
V
= 12
V
, I
= -2mA,
E
f
T
Transition frequency
–
–
180
2.0
–
MHz
pF
f = 100MHz
V
CB
= 12
V
, I
=
0
A,
E
C
ob
Output capacitance
3.5
f = 1MHz
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
2/8
20150825 – Rev.003
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EMX2 / UMX2N / IMX2
Datasheet
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Electrical characteristic curves
(T =
25°C)
a
<For Tr1 and Tr2 in common>
Fig.1 Ground Emitter Propagation
Fig.2 Grounded Emitter Output
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Characteristics
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Characteristics
Fig.3 DC Current Gain vs. Collector
Fig.4 DC Current Gain vs. Collector
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Current (I)
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Current (lI)
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
3/8
20150825 – Rev.003
ꢀ ꢀ ꢀ
EMX2 / UMX2N / IMX2
Datasheet
l
l
Electrical characteristic curves
(T =
25°C)
a
<For Tr1 and Tr2 in common>
Fig.5 Collector-Emitter Saturation Voltage
Fig.6 Collector-Emitter Saturation Voltage
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vs. Collector Current(l)
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vs. Collector Current(ll)
Fig.7 Base-Emitter Saturation Voltage
Fig.8 Gain Bandwith Product vs.
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vs. Collector Current (I)
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Emitter Current
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
4/8
20150825 – Rev.003
ꢀ ꢀ ꢀ
EMX2 / UMX2N / IMX2
Datasheet
l
l
Electrical characteristic curves
(T =25°C)
a
<For Tr1 and Tr2 in common>
Fig.9 Collector Output Capacitance vs.
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ollector-Base Voltage
Fig.10 Safe Operating Area
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Emitter Input Capacitance vs.
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Emitter-Base Voltage
Fig.11 Safe Operating Area
Fig.12 Safe Operating Area
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
5/8
20150825 – Rev.003
EMX2 / UMX2N / IMX2
ꢀ ꢀ ꢀ
Datasheet
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Dimensions
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
6/8
20150825 – Rev.003
EMX2 / UMX2N / IMX2
ꢀ ꢀ ꢀ
Datasheet
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l
Dimensions
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
7/8
20150825 – Rev.003
EMX2 / UMX2N / IMX2
ꢀ ꢀ ꢀ
Datasheet
l
l
Dimensions
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
8/8
20150825 – Rev.003
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
ROHM Semiconductor
:
EMX2T2R
