ROHM-Semicon-IMD16AT108
| Part # | ROHM-Semicon-IMD16AT108 |
Download  | ROHM-Semicon-IMD16AT108 |
Power management (dual digital transistors)
IMD16A
z
Features
z
Dimensions
(Unit : mm)
1) Two digital class transistors in a SMT package.
2) Up to 500mA can be driven.
3) Low V
CE(sat)
of drive transistors for low power dissipation.
(4) (5) (6)
z
Package, marking, and packaging specifications
Part No.
IMD16A
SMT6
D16
(3) (2)
(1)
Package
Marking
Code
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
T108
3000
Basic ordering unit (pieces)
z
Absolute maximum ratings
(
T
a
=25
°
C)
z
Inner circuit
DTr
1
(PNP)
(4)
(5)
(6)
Unit
V
Symbol
Limits
−
50
Parameter
Supply voltage
R2
=
22k
Ω
V
CC
R1
=
2.2k
Ω
−
12
V
IN
Input voltage
V
DTr1
5
DTr2
−
500
Output current
I
C
mA
R1
=
100k
Ω
(3)
(2)
(1)
DTr
2
(NPN)
Limits
50
Unit
V
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
CBO
V
CEO
V
EBO
50
V
5
V
I
C
100
mA
T
o
tal
Unit
mW
°
C
Limits
Symbol
Parameter
Collector power dissipation
300(TOTAL)
Pd
∗
Junction temperature
Storage temperature
150
Tj
−
55 to
+
150
Tstg
°
C
200mW per element must not be exceeded.
∗
2009.06 – Rev.E
1/3
c
○
2009 ROHM Co., Ltd. All rights reserved.
IMD16A
Data Sheet
z
Electrical characteristics
(
T
a
=25
°
C)
DTr
1
Unit
V
Conditions
Symbol
Min.
−
Typ.
−
Max.
−
0.3
−
Parameter
V
V
I(off)
I(on)
V
CC
= −
5V , I
= −
0.3V , I
/I
= −
50mA /
−
2.5mA
= −
5V
CC
= −
50V , V
= −
50mA , V
CE
= −
10V , I
O
= −
100
µ
A
Input voltage
−
2
−
−
V
O
O
= −
20mA
V
mA
µ
A
−
V
O(on)
−
−
0.3
−
3
Output voltage
Input current
I
O I
I
I
−
−
V
I
I
O(off)
−
−
−
0.5
−
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
V
I
=
0V
1
2
∗
∗
G
I
82
−
−
I
O
O
= −
5V
MHz
k
Ω
−
f
T
250
2.2
10
−
V
E
=
50mA , f
=
100MHz
−
R
1
1.54
8
2.86
12
−
R
2
/ R
1
1 Measured using pulse current.
∗
2 Transition frequency of mounted transistor.
∗
DTr
2
Conditions
Symbol
BV
CBO
BV
CEO
BV
EBO
Min.
50
50
5
Typ.
−
Max.
−
Unit
V
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
I
I
I
C
=
50
µ
A
−
−
V
C
=
1mA
=
50
µ
A
CB
=
50V
EB
=
4V
−
−
V
E
I
CBO
EBO
CE(sat)
FE
−
−
0.5
0.5
0.3
600
−
µ
A
µ
A
V
V
V
I
−
−
Emitter cutoff current
V
−
−
Collector-emitter saturation voltage
DC current transfer ratio
I
C
/I
CE
=
5V , I
CE
=
10V , I
B
=
1mA/0.1mA
h
100
−
250
250
100
−
V
V
C
=
1mA
f
T
MHz
k
Ω
Transition frequency
E
=−
5mA , f
=
100MHz
∗
−
R
1
70
130
Input resistance
Transition frequency of mounted transistor.
∗
2009.06 – Rev.E
2/3
c
○
2009 ROHM Co., Ltd. All rights reserved.
IMD16A
Data Sheet
z
Electrical characteristic curves
DTr
1
(PNP)
100
1k
10m
5m
V
O
=
0.3V
V
CC
=
5V
V
O
=
5V
500
50
20
Ta
=
100
°
C
Ta
=
25
°
C
Ta
= −
40
°
C
2m
1m
200
100
Ta
=
100
°
C
500
µ
10
5
Ta
=
−
40
°
C
Ta
=
25
°
C
200
µ
100
µ
Ta
=
25
°
C
50
Ta
=
−
40
°
C
Ta
=
100
°
C
20
10
5
2
1
50
µ
20
µ
10
µ
5
µ
500m
200m
2
1
2
µ
1
µ
0
10
0
5
m
00
µ
1m 2m
5m 10m
20m
50m
100m 200m
500m
500m
1
1.5
2
2.5
3
500
µ
1m
2m
5m
10m
20m
50m
100m
200m
500m
OUTPUT CURRENT
: I
O
(A)
INPUT VOLTAGE
: V
I(off)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.1 Input
voltage vs. Output current
(ON characterisitics)
Fig.2 Output
current vs. Input voltage
(OFF characteristics)
Fig.3 DC
current gain vs.
Output current characteristics
1
I
O
/I
I
=
20/1
500m
Ta
=
100
°
C
200m
100m
Ta
=
25
°
C
50m
Ta
= −
40
°
C
20m
10m
5m
2m
1m
500
µ
1m
2m
5m
10m
20m
50m
100m
200m
500m
OUTPUT CURRENT : I
O
(A)
Fig.4 Output
voltage vs.
Output current characteristics
DTr
2
(NPN)
1k
1
V
CE
=
5V
I
C
/I
B
=
10/1
Ta
=
100
°
C
500
500m
200
100
200m
100m
Ta
=
25
°
C
Ta
=
100
°
C
Ta
= −
40
°
C
Ta
=
25
°
C
50
50m
20
10
5
20m
10m
5m
Ta
= −
40
°
C
2
1
2m
1m
10
µ
20
µ
50
µ
100
µ
200
µ
500
µ
1m
2m
5m
10m
10
µ
20
µ
50
µ
100
µ
200
µ
500
µ
1m
2m
5m
10m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.5 DC
current gain vs.
Output current characteristics
Fig.6 Output
voltage vs.
Output current characteristics
2009.06 – Rev.E
3/3
c
○
2009 ROHM Co., Ltd. All rights reserved.
Notice
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consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM’s products (hereinafter
“Products”). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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ROHM Customer
Support System
© 2009
ROHM Co., Ltd. All rights reserved.
R0039
A
