ROHM-Semicon-QS5U27TR

QS5U27  

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2.5V Drive Pch+SBD MOSFET  

Datasheet  

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Outline  

TSMT5  

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V

DSS  

-20V  

340mΩ  

±1.5A  

1.25W  

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R

DS(on)

(Max.)  

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I

D  

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P

D  

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Inner circuit  

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Features  

1) The QS5U27 combines Pch MOSFET with a  

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Schottky barrier diode in a single TSMT5  

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package.  

2) Low on-state resistance with fast swicthing  

3) Low voltage drive (2.5V drive).  

4) Built-in Low V

 

schottky barrier diode.  

F

5) Pb-free lead plating ; RoHS compliant.  

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Packaging specifications  

Embossed  

Tape  

Packing  

Reel size (mm)  

180  

8

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Application  

Tape width (mm)  

Type  

Load switch, DC/ DC conversion  

Basic ordering unit (pcs)  

Taping code  

3000  

TR  

Marking  

U27  

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Absolute maximum ratings

(T

a

= 25°C)  

<MOSFET>  

Parameter  

Drain – Source voltage  

Gate – Source voltage  

Continuous drain current  

Pulsed drain current  

Symbol  

Value  

-20  

Unit  

V

DSS  

V

G

SS  

I

D  

V

±12  

±1.5  

±6.0  

-0.75  

-3.0  

0.9  

V

A

*1  

*1  

I

D, pulse  

A

I

Continuous source current (body diode)  

Pulsed source current (body diode)  

Power dissipation  

A

S

I

A

S

, pulse  

*3  

P

D  

W/element  

T

j  

Junction temperature  

150  

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℃

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© 2014 ROH

M

C

o., Ltd. All rights reserved.  

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20130716 – Rev.001  

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QS5U27  

Datasheet  

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Absolute maximum ratings

(T

a

= 25°C)  

<SBD>  

Parameter  

Symbol  

V

RM  

V

R  

Value  

25  

Unit  

V

Repetitive peak reverse voltage  

Reverse voltage  

20  

V

I

F  

Forward current  

1.0  

3.0  

0.7  

150  

A

*2  

I

FSM  

Forward current surge peak  

Power dissipation  

A

*3  

P

D  

W/element  

T

j  

Junction temperature  

℃

<MOSFET + SBD>  

Parameter  

Power dissipation  

Symbol  

Value  

1.25  

Unit  

W/total  

℃

*3  

P

D  

T

stg  

Range of storage temperature  

-55 to +150  

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Electrical characteristics (T

a

= 25°C)  

<MOSFET>  

Values  

Parameter  

Symbol  

I

G

SS  

Conditions  

= ±12V, V

 

= 0V  

Unit  

Min.  

–

Typ. Max.  

Gate – Source leakage current  

V

V

–

±10  

μA  

V

GS  

DS  

Drain – Source breakdown  

voltage  

V

(BR)DSS  

= 0

V

, I

 

= -1mA  

-20  

–

–

–

GS  

D

Zero gate voltage  

drain current  

I

DSS  

V

DS  

= -20V, V

 

= 0V  

–

-1  

μA  

V

GS  

V

G

S(th)  

Gate threshold voltage  

V

DS  

V

GS  

V

GS  

V

GS  

V

DS  

= -10V, I

 

= -1mA  

-0.7  

–

-2.0  

200  

240  

340  

–

D

= -4.5V, I

 

= -1.5A  

–

–

160  

180  

260  

–

D

Static drain – source  

on – state resistance  

*4  

R

DS(on)  

= -4V, I

 

= -1.5A  

mΩ  

S

D

= -2.5V, I

 

= -0.75A  

–

D

*4  

g

fs  

Transconductance  

= -10V, I

 

= -0.75A  

1.0  

D

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© 2014 ROH

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C

o., Ltd. All rights reserved.  

2/10  

20130716 – Rev.001  

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QS5U27  

Datasheet  

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Electrical characteristics

(T

a

= 25°C)  

<MOSFET>  

Values  

Parameter  

Input capacitance  

Symbol  

Conditions  

= 0V  

Unit  

pF  

Min.  

Typ.  

325  

60  

Max.  

C

iss  

C

oss  

C

rss  

V

V

–

–

–

–

–

–

–

–

–

–

–

–

–

–

GS  

= -10V  

Output capacitance  

Reverse transfer capacitance  

Turn – on delay time  

Rise time  

DS  

f = 1MHz  

40  

*4  

t

d(on)  

V

⋍

-15

V

, V

 

=

–

4.5V  

DD GS  

10  

t

r

*4  

I =

 

-0.75A  

10  

D

ns  

*4  

t

d(off)  

R =

 

20Ω  

Turn – off delay time  

Fall time  

35  

L

t

f

*4  

R =

 

10Ω  

10  

G

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Gate charge characteristics

(T

a

= 25°C)  

<MOSFET>  

Values  

Typ.  

4.2  

Parameter  

T

o

tal gate charge  

Symbol  

Conditions  

Unit  

nC  

Min.  

Max.  

*4  

Q

g  

–

–

–

–

–

–

V

V

⋍

-15V, I

 

= -1.5A  

DD  

D

*4  

Q

gs  

Gate – Source charge  

Gate – Drain charge  

1.0  

= -4.5V  

GS  

*4  

Q

gd  

1.1  

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Body diode electirical characteristics

(Source-Drain) (T

a

= 25°C)  

<MOSFET>  

Values  

Typ.  

–

Parameter  

Symbol  

Conditions  

Unit  

V

Min.  

–

Max.  

-1.2  

*4  

V

SD  

Forward voltage  

V

GS  

= 0

V

, I

 

= -0.75A  

S

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© 2014 ROH

M

C

o., Ltd. All rights reserved.  

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20130716 – Rev.001  

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QS5U27  

Datasheet  

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Electrical characteristics

(T

a

= 25°C)  

<SBD>  

Values  

Parameter  

Symbol  

Conditions  

I =

 

1.0A  

Unit  

Min.  

Typ.  

Max.  

0.45  

200  

V

F  

I

R  

Forward voltage  

–

–

–

–

V

F

Reverse current  

V =

 

20V  

R

μA  

*1 Pw ≤ 10μs, Duty cycle ≤ 1%  

*2 60Hz

・

1 cycle  

*3 Mounted on a ceramic board  

*4 Pulsed  

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© 2014 ROH

M

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o., Ltd. All rights reserved.  

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20130716 – Rev.001  

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QS5U27  

Datasheet  

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Electrical characteristic curves <MOSFET>  

Fig.1 Typical Capacitance vs. Drain –  

Source Voltage  

Fig.2 Switching Characteristics  

Fig.3 Typical Transfer Characteristics  

Fig.4 Static Drain – Source On – State  

Resistance vs. Gate Source Voltage  

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© 2014 ROH

M

C

o., Ltd. All rights reserved.  

20130716 – Rev.001  

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QS5U27  

Datasheet  

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Electrical characteristic curves <MOSFET>  

Fig.5 Source Current vs. Source Drain  

Voltage  

Fig.6 Static Drain – Source On – State  

Resistance vs. Drain Current (I)  

Fig.7 Static Drain – Source On – State  

Resistance vs. Drain Current (II)  

Fig.8 Static Drain – Source On – State  

Resistance vs. Drain Current (III)  

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© 2014 ROH

M

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o., Ltd. All rights reserved.  

20130716 – Rev.001  

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QS5U27  

Datasheet  

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Electrical characteristic curves <MOSFET>  

Fig.9 Static Drain – Source On – State  

Resistance vs. Drain Current (IV)  

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© 2014 ROH

M

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o., Ltd. All rights reserved.  

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20130716 – Rev.001  

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QS5U27  

Datasheet  

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Electrical characteristic curves <SBD>  

Fig.11 Forward Current vs. Forward  

Voltage  

Fig.12 Reverse Current vs. Reverse  

Voltage  

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Notice  

1.  

SBD has a large reverse leak current compared to other type of diode. Therefore, it would  

raise a junction temperature, and increase a reverse power loss. Further rise of inside  

temperature would cause a thermal runawa

y

.

T

his built-in SBD has low V

 

characteristics  

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and therefore, higher leak current. Please consider enough the surrounding temperature,  

generating heat of MOSFET and the reverse current.  

2.  

This product might cause chip aging and breakdown under the large electrified environment.  

Please consider to design ESD protection circuit.  

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© 2014 ROH

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o., Ltd. All rights reserved.  

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20130716 – Rev.001  

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QS5U27  

Datasheet  

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Measurement circuits  

Fig.1-1 Switching

T

i

me Measurement Circuit  

Fig.1-2 Switching Waveforms  

Fig.2-1 Gate Charge Measurement Circuit  

Fig.2-2 Gate Charge Waveform  

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© 2014 ROH

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o., Ltd. All rights reserved.  

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20130716 – Rev.001  

QS5U27  

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Datasheet  

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Dimensions  

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© 2014 ROH

M

C

o., Ltd. All rights reserved.  

20130716 – Rev.001  

Datasheet  

Buy  

Part Number  

Package  

Unit Quantity  

QS5U27  

TSMT5  

3000  

Minimum Package Quantity  

Packing Type  

Constitution Materials List  

RoHS  

3000  

Taping  

inquiry  

Yes