ROHM-Semicon-QS6M3TR
| Part # | ROHM-Semicon-QS6M3TR |
Download  | ROHM-Semicon-QS6M3TR |
QS6M3
Transistors
2.5V Drive
Nch+Pch MOSFET
QS6M3
z
Dimensions
(Unit : mm)
z
Structure
Silicon N-channel / P-channel MOSFET
TSMT6
1.0MAX
2.9
1.9
0.95 0.95
0.85
0.7
z
Features
(6)
(5)
(4)
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
0
~
0.1
(1)
(2)
(3)
1pin mark
0.16
0.4
Each lead has same dimensions
z
Application
Abbreviated symbol : M03
Power switching, DC / DC converter.
z
Packaging specifications
z
Equivalent circuit
Package
Taping
TR
(6)
(5)
(4)
Type
Code
∗
2
∗
2
Basic ordering unit (pieces)
3000
QS6M3
(1) Tr1 (Nch) Gate
(2) Tr2 (Pch) Source
(3) Tr2 (Pch) Gate
(4) Tr2 (Pch) Drain
(5) Tr1 (Nch) Source
(6) Tr1 (Nch) Drain
∗
1
∗
1
z
Absolute maximum ratings
(
T
a
=25
°
C)
(1)
(2)
(3)
Limits
Tr1 : Nch
Parameter
Symbol
Unit
∗
1 ESD PROTECTION DIODE
∗
2 BODY DIODE
Tr2 : Pch
−
20
Drain-source voltage
Gate-source voltage
V
DSS
V
GSS
I
D
30
12
V
12
V
Continuous
Pulsed
1.5
6.0
0.8
6.0
1.5
A
Drain current
∗
1
I
DP
6.0
A
Source current
(Body diode)
Continuous
Pulsed
I
S
−
0.75
−
6.0
A
A
∗
1
∗
2
I
SP
1.25
0.9
W / TOTAL
W / ELEMENT
°
C
Total power dissipation
Channel temperature
P
D
150
Tch
−
55 to
+
150
Storage temperature
∗
1 Pw
≤
10
µ
s, Duty cycle
≤
1%
∗
2 Mounted on a ceramic board
Tstg
°
C
z
Thermal resistance
Parameter
Symbol
Limits
100
Unit
°
C / W / TOTAL
°
C / W / ELEMENT
∗
Channel to ambient
Rth (ch-a)
139
∗
Mounted on a ceramic board
Rev.B
1/7
QS6M3
Transistors
N-ch
z
Electrical characteristics
(
T
a
=25
°
C)
Parameter
Symbol Min.
Typ. Max.
Conditions
µ
A V
GS
=
12V, V
DS
=
0V
I
D
=
1mA, V
GS
=
0V
µ
A V
DS
=
30V, V
GS
=
0V
Unit
Gate-source leakage
I
GSS
−
−
−
10
−
Drain-source breakdown voltage
V
(BR) DSS
30
V
Zero gate voltage drain current
Gate threshold voltage
I
DSS
−
0.5
−
−
−
−
−
1
V
GS (th)
1.5
230
245
360
−
−
−
−
−
−
−
−
−
−
−
V
V
DS
=
10V, I
D
=
1mA
I
D
=
1.5A, V
GS
=
4.5V
170
180
260
−
80
25
15
7
∗
Static drain-source on-state
resistance
R
DS (on)
m
Ω
I
D
=
1.5A, V
GS
=
4.0V
I
D
=
1.0A, V
GS
=
2.5V
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Y
fs
C
iss
1.0
S
I
D
=
1.0A, V
DS
=
10V
V
DS
=
10V
V
GS
=
0V
f
=
1MHz
I
D
=
1A, V
DD
15V
V
GS
=
4.5V
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
C
oss
C
rss
t
d (on)
∗
∗
∗
∗
∗
∗
∗
t
r
18
15
15
1.6
0.5
0.9
Turn-off delay time
Fall time
t
d (off)
t
f
R
L
=
15
Ω
R
G
=
10
Ω
Total gate charge
Gate-source
charge
Q
g
nC V
DD
15V R
L
=
10
Ω
nC V
GS
=
4.5V R
G
=
10
Ω
nC I
D
=
1.5A
Q
gs
Q
gd
−
−
Gate-drain
charge
∗
Pulsed
z
Body diode characteristics
(Source-Drain) (
T
a
=25
°
C)
Parameter
Forward voltage
Symbol Min.
Typ. Max.
Conditions
I
S
=
3.2A, V
GS
=
0V
Unit
V
∗
V
SD
−
−
1.2
∗
Pulsed
Rev.B
2/7
QS6M3
Transistors
P-ch
z
Electrical characteristics
(
T
a
=25
°
C)
Parameter
Symbol Min.
Typ. Max.
Conditions
Unit
Gate-source leakage
I
GSS
−
−
−
10
−
µ
A V
GS
=
12V, V
DS
=
0V
Drain-source breakdown voltage
V
(BR) DSS
−
20
V
I
D
= −
1mA, V
GS
=
0V
Zero gate voltage drain current
I
DSS
−
−
−
155
170
310
−
270
40
35
10
12
45
20
3.0
0.8
0.85
−
1
−
2.0
215
235
430
−
−
−
−
−
−
−
−
−
−
−
µ
A V
DS
= −
20V, V
GS
=
0V
Gate threshold voltage
V
GS (th)
−
0.7
V
V
DS
= −
10V, I
D
=
1mA
−
−
−
I
D
= −
1.5A, V
GS
= −
4.5V
m
Ω
I
D
= −
1.5A, V
GS
= −
4.0V
I
D
= −
0.75A, V
GS
= −
2.5V
∗
Static drain-source on-state
resistance
R
DS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Y
fs
C
iss
1.0
S
I
D
= −
0.75A, V
DS
= −
10V
V
DS
= −
10V
V
GS
=
0V
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
C
oss
C
rss
t
d (on)
f
=
1MHz
∗
∗
∗
∗
∗
∗
∗
I
D
= −
0.75A, V
DD
−
15V
V
GS
= −
4.5V
R
L
=
20
Ω
t
r
Turn-off delay time
Fall time
t
d (off)
t
f
R
G
=
10
Ω
Total gate charge
Gate-source
charge
Q
g
nC V
DD
−
15V R
L
=
10
Ω
nC V
GS
= −
4.5V R
G
=
10
Ω
nC I
D
= −
1.5A
Q
gs
Q
gd
−
−
Gate-drain
charge
∗
Pulsed
z
Body diode characteristics
(Source-Drain) (
T
a
=25
°
C)
Parameter
Forward voltage
Symbol Min.
Typ. Max.
V
SD
−
1.2
Conditions
Unit
V
−
−
I
S
= −
0.75A, V
GS
=
0V
Rev.B
3/7
QS6M3
Transistors
N-ch
z
Electrical characteristic curves
1000
1000
100
10
6
5
4
3
2
1
0
Ta
=
25
°
C
f
=
1MHz
V
GS
=
0V
Ta
=
25
°
C
V
DD
=
15V
V
GS
=
4.5V
R
G
=
10
Ω
Pulsed
Ta
=
25
°
C
V
DD
=
15V
I
D
=
1.5A
R
G
=
10
Ω
Pulsed
t
f
C
iss
100
10
1
C
rss
t
d (off)
C
oss
t
d (on)
t
r
1
0.01
0.1
1
10
100
0.01
0.1
1
10
0
0.5
1
1.5
2
DRAIN-SOURCE VOLTAGE
: V
DS
(A)
DRAIN CURRENT
: I
D
(A)
TOTAL GATE CHARGE
: Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3
Dynamic Input Characteristics
10
1
10
1
1.0
0.9
V
GS
=
0V
V
DS
=
10V
Ta
=
25
°
C
Pulsed
Pulsed
Pulsed
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
= −
25
°
C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
D
=
1.5A
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
= −
25
°
C
I
D
=
0.75A
0.1
0.1
0.01
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
0.0
0.5
1.0
1.5
0.0
0.5
1.0
1.5
2.0
2.5
GATE-SOURCE VOLTAGE
: V
GS
(V)
SOURCE-DRAIN VOLTAGE
: V
SD
(V)
GATE-SOURCE VOLTAGE
: V
GS
(V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
Fig.4
Typical Transfer Characteristics
10
10
10
V
GS
=
4.5V
Pulsed
V
GS
=
4.0V
Pulsed
V
GS
=
2.5V
Pulsed
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
= −
25
°
C
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
= −
25
°
C
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
= −
25
°
C
1
1
1
0.1
0.1
0.1
0.01
0.1
1
10
0.01
0.1
1
10
0.01
0.1
1
10
DRAIN CURRENT
: I
D
(A)
DRAIN CURRENT
: I
D
(A)
DRAIN CURRENT
: I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (
Ι
)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙ
)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙΙ
)
Rev.B
4/7
QS6M3
Transistors
P-ch
z
Electrical characteristic curves
1000
1000
100
10
8
7
6
5
4
3
2
1
0
Ta
=
25
°
C
f
=
1MHz
V
GS
=
0V
Ta
=
25
°
C
V
DD
= −
15V
V
GS
= −
4.5V
R
G
=
10
Ω
Ta
=
25
°
C
V
DD
= −
15V
I
D
= −
1.5A
R
G
=
10
Ω
Pulsed
t
f
Pulsed
C
iss
t
d (off)
100
t
d (on)
C
oss
rss
t
r
C
1
1
0
0
1
0.01
0.1
1
10
100
0.01
0.1
1
10
0
0.5
1
1.5
2
2.5
3
3.5
DRAIN-SOURCE VOLTAGE :
−
V
DS
(V)
DRAIN CURRENT
:
−
I
D
(A)
TOTAL GATE CHARGE
: Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3
Dynamic Input Characteristics
10
10
1
500
Ta
=
25
°
C
V
GS
=
0V
Pulsed
Ta
=
25
°
C
V
DS
= −
10V
Pulsed
Pulsed
400
I
D
= −
1.5A
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
= −
25
°
C
I
D
= −
0.75A
1
0.1
300
200
100
0
0.1
0.01
0.01
0.001
0
2
4
6
8
10
12
0.0
0.5
1.0
1.5
2.0
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
GATE-SOURCE VOLTAGE
:
−
V
GS
(V)
SOURCE-DRAIN VOLTAGE
:
−
V
SD
(V)
GATE-SOURCE VOLTAGE
:
−
V
GS
(V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
Fig.4
Typical Transfer Characteristics
10000
1000
100
10000
1000
100
10000
1000
100
V
GS
Pulsed
=
−
4.5V
V
GS
Pulsed
=
−
4V
V
GS
Pulsed
=
−
2.5V
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
= −
25
°
C
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
= −
25
°
C
Ta
=
125
°
C
Ta
=
75
°
C
Ta
=
25
°
C
Ta
= −
25
°
C
10
10
10
0.1
1
10
0.1
1
10
0.1
1
10
DRAIN CURRENT
:
−
I
D
(A)
DRAIN CURRENT
:
−
I
D
(A)
DRAIN CURRENT
:
−
I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (
Ι
)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙ
)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (
ΙΙΙ
)
Rev.B
5/7
QS6M3
Transistors
N-ch
z
Measurement circuit
Pulse Width
90%
V
GS
I
D
V
DS
50%
50%
10%
V
V
GS
DS
R
L
10%
10%
90%
D.U.T.
R
G
V
DD
90%
t
d(on)
t
d(off)
t
r
tf
t
on
t
off
Fig.1-2 Switching
Waveforms
Fig.1-1 Switching
Time Measurement Circuit
V
G
V
GS
I
D
V
DS
Q
g
R
L
V
GS
I
G(Const.)
D.U.T.
Q
gs
Q
gd
R
G
V
DD
Charge
Fig.2-1 Gate
Charge Measurement Circuit
Fig.2-2 Gate
Charge Waveform
Rev.B
6/7
QS6M3
Transistors
P-ch
z
Measurement circuit
Pulse Width
V
GS
I
D
V
V
GS
10%
50%
V
DS
50%
90%
R
L
10%
90%
10%
90%
D.U.T.
R
G
V
DD
DS
t
d(on)
t
d(off)
t
r
tf
t
on
t
off
Fig.3-2 Switching
Waveforms
Fig.3-1 Switching
Time Measurement Circuit
V
G
V
GS
I
D
V
DS
Q
g
R
L
V
GS
I
G(Const.)
D.U.T.
Q
gs
Q
gd
R
G
V
DD
Charge
Fig.4-1 Gate
Charge Measurement Circuit
Fig.4-2 Gate
Charge Waveform
Rev.B
7/7
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party’s intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer’s right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machiner
y
, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliabilit
y
.
H
owever, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammabilit
y
,
a
nd fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
THE AMERICAS
/
EUPOPE
/
ASIA
/
JAPAN
ROHM
Customer Support System
Contact us
:
webmaster@ rohm.co.jp
TEL : +81-75-311-2121
FAX : +81-75-315-0172
Copyright ©
2007 ROHM CO.,
L
T
D.
21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
Appendix1-Rev2.0
