ROHM-Semicon-RF4E075ATTCR

RF4E075AT  

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Pch -30V -7.5A Middle Power MOSFET  

Datasheet  

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Outline  

HUML2020L8  

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V

DSS  

-30V  

21.7mΩ  

±7.5A  

2W  

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R

DS(on)

(Max.)  

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I

D  

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P

D  

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Inner circuit  

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Features  

1) Low on – resistance.  

2) High Power small mold Package  

(HUML2020L8).  

3) Pb-free lead plating ; RoHS compliant.  

4) Halogen Free.  

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Packaging specifications  

Embossed  

Tape  

Packing  

Reel size (mm)  

180  

8

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Application  

Switching  

Tape width (mm)  

Type  

Basic ordering unit (pcs)  

Taping code  

3000  

TCR  

JT  

Load switch  

Marking  

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Absolute maximum ratings

(T

a

= 25°C)  

Parameter  

Symbol  

Value  

-30  

Unit  

V

V

DSS  

I

D  

Drain – Source voltage  

Continuous drain current  

Pulsed drain current  

±7.5  

A

*1  

I

D,pulse  

V

G

SS  

±30  

A

Gate – Source voltage  

Avalanche energ

y

,

s

ingle pulse  

Avalanche current  

±20  

V

*2  

E

A

S  

10.6  

-2.7  

mJ  

A

*2  

I

A

S  

*3  

P

D  

Power dissipation  

2

W

℃

℃

T

j  

Junction temperature  

150  

T

stg  

Range of storage temperature  

-55 to +150  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

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1/11  

20150218 – Rev.001  

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RF4E075

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Datasheet  

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Thermal resistance  

Values  

Unit  

Parameter  

Symbol  

Min.  

–

Typ. Max.  

*3  

R

thJA  

Thermal resistance, junction – ambient  

–

62.5

℃

/W  

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Electrical characteristics (T

a

= 25°C)  

Values  

Parameter  

Symbol  

Conditions  

Unit  

V

Min.  

-30  

Typ. Max.  

Drain – Source breakdown  

voltage  

V

(BR)DSS  

V

GS  

= 0

V

, I

 

= -1mA  

D

–

–

Δ

V  

I =

 

-1mA  

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(BR)DSS  

D

Breakdown voltage  

–

–

-22  

–

–

mV/

℃  

temperature coefficient  

ΔT  

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referenced to 25

℃  

j

Zero gate voltage  

drain current  

I

DSS  

V

DS  

= -30V, V

 

= 0V  

-1  

μA  

GS  

I

G

SS  

V

G

S(th)  

Δ

V  

V

V

= ±20V, V

 

= 0V  

Gate – Source leakage current  

Gate threshold voltage  

–

–

–

±100  

-2.5  

nA  

V

GS  

DS  

= V

 

, I

 

= -1mA  

-1.0  

DS  

GS  

D

I =

 

-1mA  

D

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GS(th)  

Gate threshold voltage  

temperature coefficient  

–

2.9  

–

mV/

℃  

mΩ  

S

ΔT  

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referenced to 25

℃  

j

V

= -10V, I

 

= -7.5A  

–

–

16.7 21.7  

24.4 31.7  

GS  

GS  

D

Static drain – source  

on – state resistance  

*4  

R

DS(on)  

V

= -4.5V, I

 

= -7.5A  

D

Forward Transfer  

Admittance  

|Y |

*4  

V

DS  

= -5.0V, I

 

= -7.5A  

6.5  

–

–

fs  

D

*1 Pw

≦

10μs, Duty cycle

≦

1%  

*2 Tr1: L

⋍

2mH, V

 

= -15V, R

 

= 25Ω, STARTING T

 

= 25

℃

Fig.3-1,3-2  

DD  

G

ch  

*3 MOUNTED ON 40mm×40mm Cu BOARD  

*4 Pulsed  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

2/11  

20150218 – Rev.001  

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RF4E075

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Datasheet  

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Electrical characteristics

(T

a

= 25°C)  

Values  

Parameter  

Input capacitance  

Symbol  

Conditions  

= 0V  

Unit  

pF  

Min.  

Typ.  

1000  

180  

140  

10  

Max.  

C

iss  

C

oss  

C

rss  

V

V

–

–

–

–

–

–

–

–

–

–

–

–

–

–

GS  

= -15V  

Output capacitance  

Reverse transfer capacitance  

Turn – on delay time  

Rise time  

DS  

f = 1MHz  

*4  

V

DD  

⋍

-15

V

,

V =

 

-10V  

GS  

t

d(on)  

t

r

*4  

I =

 

-3.75A  

18  

D

ns  

*4  

t

d(off)  

R

⋍

4Ω  

Turn – off delay time  

Fall time  

60  

L

t

f

*4  

R =

 

10Ω  

35  

G

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Gate charge characteristics

(T

a

= 25°C)  

Values  

Typ.  

22  

Parameter  

Symbol  

Conditions  

Unit  

nC  

Min.  

Max.  

V

= -10V  

= -4.5V  

–

–

–

–

–

–

–

–

GS  

GS  

*4  

Q

g  

T

o

tal gate charge  

11  

V

⋍

-15V  

I =

 

-7.5A  

DD  

*4  

V

Q

gs  

Gate – Source charge  

Gate – Drain charge  

3.4  

D

*4  

Q

gd  

4.2  

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Body diode electrical characteristics

(Source-Drain) (T

a

= 25°C)  

Values  

Typ.  

Parameter  

Symbol  

I

S  

Conditions  

Unit  

A

Min.  

–

Max.  

Body diode continuous  

forward current  

–

-1.67  

T =

 

25

℃  

a

Body diode  

pulse current  

*1  

I

SP  

–

–

–

–

-30  

A

V

*4  

V

SD  

Forward voltage  

V

GS  

= 0

V

, I

 

= -1.67A  

-1.2  

S

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

3/11  

20150218 – Rev.001  

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RF4E075

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Datasheet  

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Electrical characteristic curves  

Fig.1 Power Dissipation Derating Curve  

Fig.2 Maximum Safe Operating Area  

Fig.3 Normalized Transient Thermal

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Resistance vs. Pulse Width  

Fig.4 Single Pulse Maximum Power

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dissipation  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

4/11  

20150218 – Rev.001  

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RF4E075

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Datasheet  

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Electrical characteristic curves  

Fig.5 Typical Output Characteristics(I)  

Fig.6 Typical Output Characteristics(II)  

Fig.7 Breakdown Voltage vs. Junction  

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mperature  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

5/11  

20150218 – Rev.001  

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RF4E075

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Datasheet  

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Electrical characteristic curves  

Fig.8 Typical Transfer Characteristics  

Fig.9 Gate Threshold Voltage vs. Junction  

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mperature  

Fig.10 Transconductance vs. Drain Current  

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© 2015 ROH

M

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o., Ltd. All rights reserved.  

6/11  

20150218 – Rev.001  

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RF4E075

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Datasheet  

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Electrical characteristic curves  

Fig.11 Drain Current Derating Curve  

Fig.12 Static Drain – Source On – State  

ꢀ

Resistance vs. Gate Source Voltage  

Fig.13 Static Drain – Source On – State  

ꢀ

Resistance vs. Junction Temperature  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

7/11  

20150218 – Rev.001  

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RF4E075

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Datasheet  

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Electrical characteristic curves  

Fig.14 Static Drain – Source On – State  

Fig.15 Static Drain – Source On – State  

ꢀ

Resistance vs. Drain Current(I)  

ꢀ

Resistance vs. Drain Current(II)  

Fig.16 Static Drain – Source On – State  

ꢀ

Resistance vs. Drain Current(III)  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

8/11  

20150218 – Rev.001  

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RF4E075

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Datasheet  

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Electrical characteristic curves  

Fig.17 Typical Capacitance vs. Drain –  

Fig.18 Switching Characteristics  

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Source Voltage  

Fig.19 Dynamic Input Characteristics  

Fig.20 Source Current vs. Source Drain  

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Voltage  

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© 2015 ROH

M

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o., Ltd. All rights reserved.  

9/11  

20150218 – Rev.001  

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RF4E075

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Datasheet  

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Measurement circuits  

Fig.1-1 Switching

T

i

me Measurement Circuit  

Fig.1-2 Switching Waveforms  

Fig.2-1 Gate Charge Measurement Circuit  

Fig.2-2 Gate Charge Waveform  

Fig.3-1 Avalanche Measurement Circuit  

Fig.3-2 Avalanche Waveform  

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Notice  

This product might cause chip aging and breakdown under the large electrified environment.  

Please consider to design ESD protection circuit.  

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© 2015 ROH

M

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o., Ltd. All rights reserved.  

10/11  

20150218 – Rev.001  

RF4E075

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Datasheet  

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Dimensions  

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© 2015 ROH

M

C

o., Ltd. All rights reserved.  

11/11  

20150218 – Rev.001