ROHM-Semicon-RJU002N06T106

Part #	ROHM-Semicon-RJU002N06T106
Download	ROHM-Semicon-RJU002N06T106

2.5V Drive Nch MOSFET

RJU002N06

Structure

Dimensions

(Unit : mm)

Silicon N-channel MOS FET

UMT3

2.0

0.9

0.7

0.2

0.3

Features

( )

1) Low On-resistance.

2) Low voltage drive (2.5V drive).

( )

0.6

.65

1.3

0.15

(1) Source

(2) Gate

Each lead has same dimensions

Applications

Switching

Abbreviated symbol : ML

(3) Drain

Packaging specifications

Inner circuit

(3)

Package

Taping

Type

Code

T106

3000

Basic ordering unit (pieces)

RJU002N06

(2)

∗

(1)

Source

(2)

Gate

(3)

Drain

∗

(1)

∗

ESD PROTECTION DIODE

∗

BODY DIODE

Absolute maximum ratings

(

=25

Parameter

Drain-source voltage

Symbol

Limits

Unit

DSS

GSS

Gate-source voltage

Continuous

200

Drain current

∗

Pulsed

800

Total power dissipation

Channel temperature

200

Tch

Tstg

150

Range of storage temperature

∗

1 Pw

≤

s, Duty cycle

≤

∗

2 Each terminal mounted on a recommended land

−

55 to

150

Thermal resistance

Parameter

Symbol

Limits

625

Unit

∗

Channel to ambient

∗

Each terminal mounted on a recommended land

Rth(ch-a)

C/W

www.rohm.com

2009.03 – Rev.A

○

1/4

RJU002N06

Data Sheet

Electrical characteristics

(

=25

Parameter

Symbol Min.

Typ. Max.

Conditions

A V

=±12V, V

=0V

= 1mA, V

=0V

A V

= 60V, V

=0V

Unit

Gate-source leakage

GSS

−

±10

−

Drain-source breakdown voltage

(BR) DSS

Zero gate voltage drain current

Gate threshold voltage

DSS

−

0.5

−

1.6

1.7

2.2

−

GS (th)

1.5

2.3

2.4

3.1

−

= 10V, I

= 1mA

= 200mA, V

= 4.5V

= 200mA, V

= 4V

= 200mA, V

= 2.5V

= 10V, I

= 200mA

= 10V

Ω

Static drain-source on-state

resistance

∗

DS (on)

∗

Forward transfer admittance

Input capacitance

iss

0.1

−

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

oss

rss

d (on)

−

=0V

f=1MHz

∗

= 100mA

= 4V

Turn-off delay time

d (off)

=300

Ω

Fall time

∗

Pulsed

=10

Ω

Body diode characteristics

(Source-drain) (

=25

Parameter

Symbol Min.

Typ. Max.

Conditions

Unit

Forward voltage

−

1.2

= 0.16A, V

=0V

www.rohm.com

2009.03 – Rev.A

○

2/4

RJU002N06

Data Sheet

Electrical characteristics curves

0.1

0.5

100

Ta=25°C

Pulsed

= 10V

Pulsed

= 4.0V

Ta= 25°C

Pulsed

_{GS
= 3.5V}

_{GS
= 3.0V}

0.4

0.3

0.2

0.1

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= – 25°C

= 2.5V

_{GS
= 4.0V}

_{GS
= 4.5V}

0.01

0.001

= 2.0V

= 1.5V

0.1

0.2

0.4

0.6

0.8

0.5

1.5

2.5

0.01

0.1

DRAIN-CURRENT : I

[mA]

GATE-SOURCE VOLTAGE : V

[V]

Fig.2 Typical

Transfer Characteristics

DRAIN-SOURCE VOLTAGE : V

[V]

Fig.3 Static

Drain-Source On-State

Resistance vs. Drain Current(

Fig.1 Typical Output Characteristics(

)

Ⅰ

)

Ⅰ

100

= 4.0V

= 4.5V

Pulsed

= 2.5V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Pulsed

Ta=75°C

Ta=25°C

Ta= -25°C

0.1

0.01

0.1

0.01

0.1

0.01

0.1

DRAIN-CURRENT : I

[mA]

DRAIN-CURRENT : I

[mA]

DRAIN-CURRENT : I

[mA]

Fig.6 Static

Drain-Source On-State

Resistance vs. Drain Current(

Fig.4 Static

Drain-Source On-State

Fig.5 Static

Drain-Source On-State

Resistance vs. Drain Current(

)

Ⅳ

Resistance vs. Drain Current(

)

Ⅱ

)

Ⅲ

10000

1000

100

=0V

Pulsed

Ta=25°C

Pulsed

_{DD
= 30V}

_GS
=4.0V

= 0.2A

(off)

0.1

0.01

=10

Ω

Pulsed

= 0.1A

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

(on)

0.001

0.5

1.5

100

1000

SOURCE-DRAIN VOLTAGE : V

[V]

GATE-SOURCE VOLTAGE : V

[V]

Fig.8 Static

Drain-Source On-State

DRAIN-CURRENT : I

[A]

Fig.9 Switching Characteristics

Fig.7 Reverse Drain Current

vs. Sourse-Drain Voltage

Resistance vs. Gate Source Voltage

www.rohm.com

2009.03 – Rev.A

○

3/4

RJU002N06

Data Sheet

0.1

100

Operation in this area is limited by R

DS(ON)

= 4.5V)

1ms 100us

Ciss

=10ms

DC operation

Coss

0.01

0.001

Crss

Ta=25°C

f=1MHz

Ta = 25°C

Single Pulse

_GS
=0V

MOUNTED ON SERAMIC BOARD

0.1

DRAIN-SOURCE VOLTAGE : V

[V]

Fig.11 Maximum Safe Operating Aera

100

0.01

0.1

100

DRAIN-SOURCE VOLTAGE : V

[V]

Fig.10 Typical

Capacitance

vs. Drain-Source Voltage

1000

100

Ta = 25°C

Single Pulse

Rth(ch-a)(t) = r(t)×Rth(ch-a)

Rth(ch-a) = 625 °C/W

Mounted on a SERAMIC board

0.0001

0.001

0.01

0.1

100

1000

PULSE WIDTH : Pw(s)

Fig.12 Normalized Transient Thermal Resistance vs. Pulse

idth

www.rohm.com

2009.03 – Rev.A

○

4/4

Appendix

Notes

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM

Co.,Ltd.

The content specified herein is subject to change for improvement without notice.

The content specified herein is for the purpose of introducing ROHM’s products (hereinafter “Products”). If you

wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM

upon request.

Examples of application circuits, circuit constants and any other information contained herein illustrate the

standard usage and operations of the Products. The peripheral conditions must be taken into account

when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specified in this document. Howeve

hould

you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no re-

sponsibility for such damage.

The technical information specified herein is intended only to show the typical functions of and examples

of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to

use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no re-

sponsibility whatsoever for any dispute arising from the use of such technical information.

The Products specified in this document are intended to be used with general-use electronic equipment

or devices (such as audio visual equipment, office-automation equipment, communication devices, elec-

tronic appliances and amusement devices).

The Products are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or

malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard against the

possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as

derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your

use of any Product outside of the prescribed scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or system

which requires an extremely high level of reliability the failure or malfunction of which may result in a direct

threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment,

aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear

no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intend-

ed to be used for any such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specified herein that may be controlled under

the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact your nearest sales office.

THE AMERICAS

EUROPE

ASIA

JAPAN

ROHM Customer

Support System

webmaster@ rohm.co.jp

www.rohm.com

TEL : +81-75-311-2121

FAX : +81-75-315-0172

21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan

Appendix-Rev4.1

ROHM-Semicon-RJU002N06T106

Related Posts

CUI-CPE-171

DB-Unlimited-TP243408-1

DB-Unlimited-TE054003-2