ROHM-Semicon-RQ1A060ZPTR
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RQ1A060ZP
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Pch -12V -6A Middle Power MOSFET
Datasheet
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Outline
TSMT8
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V
DSS
-12V
23mΩ
±6A
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R
DS(on)
(Max.)
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I
D
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P
D
1.5W
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Inner circuit
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Features
1) Low on – resistance.
2) -1.5V Drive
3) Built-in G-S protection diode.
4) Small surface mount package(TSMT8).
5) Pb-free lead plating ; RoHS compliant
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Packaging specifications
Embossed
Tape
Packing
Reel size (mm)
180
8
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Application
Tape width (mm)
Type
Switching
Basic ordering unit (pcs)
Taping code
3000
TR
Marking
YH
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Absolute maximum ratings
(T
a
= 25°C)
Parameter
Drain – Source voltage
Continuous drain current
Pulsed drain current
Symbol
Value
-12
Unit
V
V
DSS
I
D
±6
A
*1
I
D,pulse
V
G
SS
±24
A
Gate – Source voltage
±10
V
*2
P
D
1.5
W
W
℃
℃
Power dissipation
*3
P
D
0.7
T
j
Junction temperature
150
T
stg
Range of storage temperature
-55 to +150
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
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1/11
20150730 – Rev.001
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RQ1A060ZP
Datasheet
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Thermal resistance
Values
Unit
Parameter
Symbol
Min.
Typ. Max.
*2
R
thJA
–
–
–
–
83.3
℃
/W
Thermal resistance, junction – ambient
*3
R
thJA
178
℃
/W
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Electrical characteristics (T
a
= 25°C)
Values
Parameter
Symbol
V
(BR)DSS
Conditions
Unit
Min.
-12
Typ. Max.
Drain – Source breakdown
voltage
V
GS
= 0
V
, I
= -1mA
–
–
V
D
Δ
V
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I =
-1mA
(BR)DSS
D
Breakdown voltage
–
–
-21.9
–
–
mV/
℃
temperature coefficient
ΔT
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referenced to 25
℃
j
Zero gate voltage
drain current
I
DSS
V
DS
= -12V, V
= 0V
GS
-1
μA
I
G
SS
V
G
S(th)
Δ
V
Gate – Source leakage current
Gate threshold voltage
V
V
= ±10V, V
= 0V
–
–
–
±10
-1.0
μA
V
GS
DS
= -6V, I
= -1mA
-0.3
DS
D
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I =
-1mA
GS(th)
D
Gate threshold voltage
temperature coefficient
–
2.4
–
mV/
℃
ΔT
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referenced to 25
℃
j
V
V
V
V
= -4.5V, I
= -6A
–
–
–
–
–
16
22
28
39
20
23
31
42
78
–
GS
GS
GS
GS
D
= -2.5V, I
= -3A
D
Static drain – source
on – state resistance
*4
R
DS(on)
mΩ
= -1.8V, I
= -3A
D
= -1.5V, I
= -1.2A
D
R
G
|Y |
*4
Gate input resistance
f = 1MHz, open drain
Ω
S
Forward Transfer
Admittance
V
DS
= -6V, I
= -6A
7.5
–
–
fs
D
*1 Pw
≦
10μs , Duty cycle
≦
1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (20×20×0.8mm)
*4 Pulsed
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
2/11
20150730 – Rev.001
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RQ1A060ZP
Datasheet
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Electrical characteristics
(T
a
= 25°C)
Values
Parameter
Input capacitance
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ.
2800
340
310
12
Max.
C
iss
C
oss
C
rss
V
V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
= -6V
Output capacitance
Reverse transfer capacitance
Turn – on delay time
Rise time
DS
f = 1MHz
*4
t
d(on)
V
⋍
-6
V
,
V =
-4.5V
DD GS
t
r
*4
I =
-3A
105
400
230
D
ns
*4
t
d(off)
R
⋍
2Ω
Turn – off delay time
Fall time
L
t
f
*4
R =
10Ω
G
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Gate charge characteristics
(T
a
= 25°C)
Values
Typ.
34
Parameter
Symbol
Conditions
Unit
nC
Min.
Max.
*4
Q
g
T
o
tal gate charge
–
–
–
–
–
–
V
⋍
-6V,
I =
-6A,
DD
*4
Q
gs
Gate – Source charge
Gate – Drain charge
6.0
D
V
GS
= -4.5V
*4
Q
gd
5.0
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Values
Typ.
Parameter
Symbol
I
S
Conditions
Unit
A
Min.
–
Max.
-1
Body diode continuous
forward current
–
T =
25
℃
a
Body diode
pulse current
*1
I
SP
–
–
–
–
-24
A
V
*4
V
SD
V
GS
= 0
V
, I
= -6A
S
Forward voltage
-1.2
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
3/11
20150730 – Rev.001
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RQ1A060ZP
Datasheet
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Fig.4 Single Pulse Maximum Power
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Resistance vs. Pulse Width
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dissipation
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
4/11
20150730 – Rev.001
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RQ1A060ZP
Datasheet
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Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Fig.8 Typical Transfer Characteristics
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Junction Temperature
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
5/11
20150730 – Rev.001
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RQ1A060ZP
Datasheet
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Electrical characteristic curves
Fig.9 Gate Threshold Voltage vs.
Fig.10 Forward Transfer Admittance vs.
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Junction Temperature
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Drain Current
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain – Source On – State
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Resistance vs. Gate Source Voltage
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
6/11
20150730 – Rev.001
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RQ1A060ZP
Datasheet
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Electrical characteristic curves
Fig.13 Static Drain – Source On – State
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Resistance vs. Junction Temperature
Fig.14 Static Drain – Source On – State
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Resistance vs. Drain Current (I)
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
7/11
20150730 – Rev.001
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RQ1A060ZP
Datasheet
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Electrical characteristic curves
Fig.15 Static Drain – Source On – State
Fig.16 Static Drain – Source On – State
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Resistance vs. Drain Current (II)
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Resistance vs. Drain Current (lII)
Fig.17 Static Drain – Source On – State
Fig.18 Static Drain – Source On – State
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Resistance vs. Drain Current (IV)
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Resistance vs. Drain Current (V)
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
8/11
20150730 – Rev.001
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RQ1A060ZP
Datasheet
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Electrical characteristic curves
Fig.19 Typical Capacitance vs.
Fig.20 Switching Characteristics
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Drain – Source Voltage
Fig.21 Dynamic Input Characteristics
Fig.22 Source Current vs.
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Source Drain Voltage
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
9/11
20150730 – Rev.001
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RQ1A060ZP
Datasheet
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Measurement circuits
Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT
Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT
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Fig. 1-2 SWITCHING WAVEFORMS
Fig. 2-2 GATE CHARGE WAVEFORM
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Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
10/11
20150730 – Rev.001
RQ1A060ZP
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Datasheet
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Dimensions
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© 2015 ROH
M
C
o., Ltd. All rights reserved.
11/11
20150730 – Rev.001
