ROHM-Semicon-RQ1A070ZPTR

RQ1A070ZP  

ꢀꢀ

Pch -12V -7A Middle Power MOSFET  

Datasheet  

ꢀꢀ  

l

l

Outline  

TSMT8  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

V

DSS  

-12V  

12mΩ  

±7A  

ꢀ

R

DS(on)

(Max.)  

ꢀ

I

D  

ꢀ

P

D  

1.5W  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

l

l

Inner circuit  

l

l

Features  

1) Low on – resistance.  

2) Low voltage drive(1.5V).  

3) High power package.  

l

l

Packaging specifications  

Embossed  

Tape  

Packing  

Reel size (mm)  

180  

8

l

l

Application  

Tape width (mm)  

Type  

Switching  

Basic ordering unit (pcs)  

Taping code  

3000  

TR  

YJ  

Marking  

l

l

Absolute maximum ratings

(T

a

= 25°C)  

Parameter  

Drain – Source voltage  

Continuous drain current  

Pulsed drain current  

Symbol  

Value  

-12  

Unit  

V

V

DSS  

I

D  

±7  

A

*1  

I

D,pulse  

V

G

SS  

±28  

A

Gate – Source voltage  

±10  

V

*2  

P

D  

1.5  

W

W

℃

℃

Power dissipation  

*3  

P

D  

0.7  

T

j  

Junction temperature  

150  

T

stg  

Range of storage temperature  

-55 to +150  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

© 2015 ROH

M

C

o., Ltd. All rights reserved.  

ꢀ ꢀ  

1/11  

20150730 – Rev.001  

ꢀ ꢀ ꢀ

ꢀ

ꢀ ꢀ  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

RQ1A070ZP  

Datasheet  

ꢀ

ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

l

l

Thermal resistance  

Values  

Unit  

Parameter  

Symbol  

Min.  

Typ. Max.  

*2  

R

thJA  

–

–

–

–

83.3

℃

/W  

Thermal resistance, junction – ambient  

*3  

R

thJA  

178

℃

/W  

l

l

Electrical characteristics (T

a

= 25°C)  

Values  

Parameter  

Symbol  

Conditions  

Unit  

Min.  

-12  

Typ. Max.  

Drain – Source breakdown  

voltage  

V

(BR)DSS  

V

GS  

= 0

V

, I

 

= -1mA  

D

–

–

V

Δ

V  

I =

 

-1mA  

ꢀ

ꢀ

(BR)DSS  

D

Breakdown voltage  

–

–

-21.9  

–

–

mV/

℃  

temperature coefficient  

ΔT  

ꢀ

ꢀ

ꢀ

ꢀ

referenced to 25

℃  

j

Zero gate voltage  

drain current  

I

DSS  

V

DS  

= -12V, V

 

= 0V  

-1  

μA  

GS  

I

G

SS  

V

G

S(th)  

Δ

V  

V

V

= ±10V, V

 

= 0V  

Gate – Source leakage current  

Gate threshold voltage  

–

–

–

±10  

-1.0  

μA  

V

GS  

DS  

= -6V, I

 

= -1mA  

-0.3  

DS  

D

I =

 

-1mA  

D

ꢀ

ꢀ

GS(th)  

Gate threshold voltage  

temperature coefficient  

–

2.4  

–

mV/

℃  

mΩ  

S

ΔT  

ꢀ

ꢀ

ꢀ

ꢀ

referenced to 25

℃  

j

V

GS  

V

GS  

V

GS  

V

GS  

= -4.5V, I

 

= -7A  

–

–

–

–

8

12  

16  

23  

38  

D

= -2.5V, I

 

= -3.5A  

11  

15  

19  

D

Static drain – source  

on – state resistance  

*4  

R

DS(on)  

= -1.8V, I

 

= -3.5A  

D

= -1.5V, I

 

= -1.4A  

D

Forward Transfer  

Admittance  

|Y |

*4  

V

DS  

= -6V, I

 

= -7A  

12  

–

–

fs  

D

*1 Pw

≦

10μs, Duty cycle

≦

1%  

*2 Mounted on a ceramic board (30×30×0.8mm)  

*3 Mounted on a FR4(20×20×0.8mm)  

*4 Pulsed  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

ꢀ

ꢀ ꢀ ꢀ ꢀ

 

ꢀꢀ ꢀ ꢀ  

ꢀ

ꢀ

ꢀ

ꢀ

ꢀ

ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

© 2015 ROH

M

C

o., Ltd. All rights reserved.  

2/11  

20150730 – Rev.001  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

RQ1A070ZP  

Datasheet  

l

l

Electrical characteristics

(T

a

= 25°C)  

Values  

Parameter  

Input capacitance  

Symbol  

Conditions  

= 0V  

Unit  

pF  

Min.  

Typ.  

7400  

800  

750  

35  

Max.  

C

iss  

C

oss  

C

rss  

V

V

–

–

–

–

–

–

–

–

–

–

–

–

–

–

GS  

= -6V  

Output capacitance  

Reverse transfer capacitance  

Turn – on delay time  

Rise time  

DS  

f = 1MHz  

*4  

t

d(on)  

V

⋍

-6

V

,

V =

 

-4.5V  

DD GS  

t

r

*4  

I =

 

-3.5A  

95  

D

ns  

*4  

t

d(off)  

R

⋍

1.7Ω  

Turn – off delay time  

Fall time  

310  

190  

L

t

f

*4  

R =

 

10Ω  

G

l

l

Gate charge characteristics

(T

a

= 25°C)  

Values  

Typ.  

58  

Parameter  

Symbol  

Conditions  

Unit  

nC  

Min.  

Max.  

*4  

Q

g  

T

o

tal gate charge  

–

–

–

–

–

–

V

⋍

-6V,  

I =

 

-7A,  

DD  

*4  

Q

gs  

Gate – Source charge  

Gate – Drain charge  

11  

D

V

GS  

= -4.5V  

*4  

Q

gd  

10  

l

l

Body diode electrical characteristics

(Source-Drain) (T

a

= 25°C)  

Values  

Typ.  

Parameter  

Symbol  

I

S  

Conditions  

Unit  

A

Min.  

–

Max.  

-1  

Body diode continuous  

forward current  

–

T =

 

25

℃  

a

Body diode  

pulse current  

*1  

I

SP  

–

–

–

–

-28  

A

V

*4  

V

SD  

V

GS  

= 0

V

, I

 

= -7A  

S

Forward voltage  

-1.2  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

© 2015 ROH

M

C

o., Ltd. All rights reserved.  

3/11  

20150730 – Rev.001  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

RQ1A070ZP  

Datasheet  

l

l

Electrical characteristic curves  

Fig.1 Power Dissipation Derating Curve  

Fig.2 Maximum Safe Operating Area  

Fig.3 Normalized Transient Thermal  

Fig.4 Single Pulse Maximum Power  

ꢀꢀꢀꢀ

Resistance vs. Pulse Width  

ꢀꢀꢀꢀ

dissipation  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

© 2015 ROH

M

C

o., Ltd. All rights reserved.  

4/11  

20150730 – Rev.001  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

RQ1A070ZP  

Datasheet  

l

l

Electrical characteristic curves  

Fig.5 Typical Output Characteristics(I)  

Fig.6 Typical Output Characteristics(II)  

Fig.7 Breakdown Voltage vs.  

Fig.8 Typical Transfer Characteristics  

ꢀꢀꢀꢀꢀ

Junction Temperature  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

© 2015 ROH

M

C

o., Ltd. All rights reserved.  

5/11  

20150730 – Rev.001  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

RQ1A070ZP  

Datasheet  

l

l

Electrical characteristic curves  

Fig.9 Gate Threshold Voltage vs.  

Fig.10 Forward Transfer Admittance vs.  

ꢀꢀꢀꢀꢀ

Junction Temperature  

ꢀꢀꢀꢀꢀ

Drain Current  

Fig.11 Drain Current Derating Curve  

Fig.12 Static Drain – Source On – State  

ꢀꢀꢀ

Resistance vs. Gate Source Voltage  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

© 2015 ROH

M

C

o., Ltd. All rights reserved.  

6/11  

20150730 – Rev.001  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

RQ1A070ZP  

Datasheet  

l

l

Electrical characteristic curves  

Fig.13 Static Drain – Source On – State  

ꢀꢀꢀ

Resistance vs. Junction Temperature  

Fig.14 Static Drain – Source On – State  

ꢀꢀꢀꢀꢀ

Resistance vs. Drain Current (I)  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

© 2015 ROH

M

C

o., Ltd. All rights reserved.  

7/11  

20150730 – Rev.001  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

RQ1A070ZP  

Datasheet  

l

l

Electrical characteristic curves  

Fig.15 Static Drain – Source On – State  

Fig.16 Static Drain – Source On – State  

ꢀꢀꢀꢀꢀ

Resistance vs. Drain Current (II)  

ꢀꢀꢀꢀꢀ

Resistance vs. Drain Current (lII)  

Fig.17 Static Drain – Source On – State  

Fig.18 Static Drain – Source On – State  

ꢀꢀꢀꢀꢀ

Resistance vs. Drain Current (IV)  

ꢀꢀꢀꢀꢀ

Resistance vs. Drain Current(V)  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

© 2015 ROH

M

C

o., Ltd. All rights reserved.  

8/11  

20150730 – Rev.001  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

RQ1A070ZP  

Datasheet  

l

l

Electrical characteristic curves  

Fig.19 Typical Capacitance vs.  

Fig.20 Switching Characteristics  

ꢀꢀꢀꢀꢀꢀ

Drain – Source Voltage  

Fig.21 Dynamic Input Characteristics  

Fig.22 Source Current vs.  

ꢀꢀꢀꢀꢀꢀ

Source Drain Voltage  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

© 2015 ROH

M

C

o., Ltd. All rights reserved.  

9/11  

20150730 – Rev.001  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

RQ1A070ZP  

Datasheet  

l

l

Measurement circuits  

Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT  

Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

Fig. 1-2 SWITCHING WAVEFORMS  

Fig. 2-2 GATE CHARGE WAVEFORM  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

l

l

Notice  

This product might cause chip aging and breakdown under the large electrified environment.  

Please consider to design ESD protection circuit.  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

© 2015 ROH

M

C

o., Ltd. All rights reserved.  

10/11  

20150730 – Rev.001  

RQ1A070ZP  

ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

ꢀ ꢀ ꢀ ꢀ ꢀ  

Datasheet  

l

l

Dimensions  

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

 

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  

© 2015 ROH

M

C

o., Ltd. All rights reserved.  

11/11  

20150730 – Rev.001