ROHM-Semicon-RQ3E130MNTB1
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RQ3E130MN
Nch 30V 13A Power MOSFET
Datasheet
l
Outline
V
DSS
30V
8.1m
W
11.6m
W
13A
HSMT8
R
DS(on)
at 10V (Max.)
R
DS(on)
at 4.5V (Max.)
I
D
P
D
2.0W
l
Features
l
Inner circuit
1) Low on – resistance.
(1) So
(
ource
S
urce
(4
Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
2) High Power Small Mold Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant
4) Halogen Free
*
1 ESD PROTECTION DIODE
*
2 BODY DIODE
5) 100% Rg and UIS Tested
l
P
k
ging specifica
ons
Packagi
Taping
330
Reel si
(mm)
l
Application
Tape width (mm)
Typ
12
DC/DC converters
asic ordering unit (pcs)
3,000
TB1
Taping code
Marking
E130MN
l
Absolute maximum r
gs
(T
a
= 25°C)
,
l
s otherwise specified
arameter
Drain – Source volta
e
Symbol
V
DSS
Value
30
Unit
V
*1
Continuous
ain current
Pulsed
current
A
I
D
13
*2
A
I
D,pulse
52
V
GSS
Gat
Source voltage
P
wer dissipation
V
20
*3
2.0
W
°C
°C
P
D
T
j
Junction temperature
Range of storage temperature
150
T
stg
–
55 to
+
150
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.A
1/10
Data Sheet
RQ3E130MN
l
Thermal resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
*3
–
–
–
–
62.5
–
°C/W
°C/W
R
thJA
Thermal resistance, junction – ambient
R
thJC
l
Electrical characteristics
(T
a
= 25°C)
,unless otherwise specified
Values
.
Parameter
Symbol
Conditions
Unit
V
Min.
3
Max.
–
Drain – Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
–
ΔV
(BR)DSS
ΔT
j
I
D
=1mA
referenced to 25°
Breakdown voltage
temperature coefficient
–
35
6
–
mV/°C
I
DSS
I
GSS
V
DS
= 30V,
S
= 0V
Zero gate voltage drain current
Gate – Source leakage current
Gate threshold voltage
–
–
–
–
1
m
A
m
A
V
V
GS
=
0V, V
DS
= 0V
10
2.5
V
GS (th)
V
S
=
0V, I
D
= 1mA
1.0
ΔV
(GS
D
=1mA
referenc
to 2
°C
Gate threshold voltage
temperature coefficient
–
–
mV/°C
–
4.3
V
GS
=10
=13A
V
G
=4.5V, I
D
=13A
= 1MHz, open drain
V
DS
=10V, I
D
=13A
–
5.8
8.3
4.2
–
8.1
Static drain – source
on – state resistance
*4
DS(on)
R
G
m
W
–
–
11.6
Gate input resistan
Transconductance
–
–
W
10.0
S
*1 Limited
y by maximum
ture allowed.
*2 Pw
s, Duty cycle
1%
*3 M
nted on a ceramic board. (30×30×0.8mm)
*4 Pulsed
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.A
2/10
Data Sheet
RQ3E130MN
l
Electrical characteristics
(T
a
= 25°C)
Values
Typ.
840
360
90
Parameter
Symbol
Conditions
V
GS
= 0V
Unit
Min.
Max.
C
iss
C
oss
C
rss
Input capacitance
–
–
–
–
–
–
–
–
–
–
–
–
V
DS
= 15V
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn – on delay time
Rise time
pF
ns
*4
V
DD
⋍
15V, V
GS
= 10V
10
t
d(on)
*4
I
D
= 6.5A
R
L
= 2.3
W
R
G
= 10
W
18
t
r
*4
Turn – off delay time
Fall time
t
d(off)
*4
7
t
f
l
Gate Charge characteristics
(T
a
= 25
C)
lues
Typ.
Parameter
Symbol
Cond
ns
Unit
nC
Mi
.
–
Max.
–
V
DD
1
V, I
D
=13A
V
GS
10V
14
*4
Total gate charge
Q
g
–
6.6
–
V
DD
⋍
=13A
*4
V
GS
= 4
Gate – Source charge
Gate – Drain charge
–
–
2.8
2.4
–
–
Q
gs
*4
Q
gd
l
Body diode elec
ical characteris
s
Source-Drain)(T
a
= 25°C)
Values
Typ.
Pa
meter
Symbol
Conditions
Unit
A
Min.
–
Max.
13
Inve
e diode continuous,
rward current
*1
T
a
= 25°C
–
I
S
*4
V
GS
= 0V, I
s
= 1.67A
Forward voltage
–
–
–
–
1.2
V
V
SD
*4
Reverse recovery time
Reverse recovery charge
27.2
24.3
–
–
ns
m
C
t
rr
I
S
=13A
*4
di/dt=100A/
m
s
Q
rr
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.A
3/10
Data Sheet
RQ3E130MN
l
Electrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
120
100
80
60
40
20
0
DC Operation
P
W
= 100
m
s
P
W
= 1ms
P
W
= 10ms
10
1
Operation in this area
is limited by R
DS
(on)
(V
GS
= 10V
0.1
0.01
T
a
=25
Single
e
Mou
a ceramic board.
0mm
30mm
×
0.8mm)
0.
1
10
100
0
50
100
150
200
Drain
our
e Voltage : V
DS
[V]
Junction Temperature : T
j
[
°
C]
Fig.3 Normalized Transient The
al
Resistance vs. Pulse
dth
g.4 Single Pulse Maximum
Power dissipation
000
1000
100
10
10
T
a
=25ºC
Single Pulse
T
a
=25ºC
1
to
1
=
.5
0.1
D = 0.1
D = 0.05
D = 0.01
bottom Single
0
Rth(ch-a)=62.5ºC/W
Rth(ch-a)(t)=r(t)
×
Rth(ch-a)
Mounted on a ceramic board.
(30mm
×
30mm
×
0.8mm)
0.001
1
0.0001 0.001
0.01 0.1
1
10
100 1000
0.0001 0.001
0.01 0.1
1
10
100 1000
Pulse Width : P
W
[s]
Pulse Width : P
W
[s]
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.A
4/10
Data Sheet
RQ3E130MN
l
Electrical characteristic curves
Fig.6 Typical Output Characteristics(II)
Fig.5 Typical Output Characteristics(I)
10
T
a
=25ºC
T
a
=25ºC
Pulse
12
10
8
V
GS
= 10V
Pulsed
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.0V
8
6
4
2
0
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.0V
6
4
V
GS
= 2.5V
2
V
GS
= 2.5V
0.8
0
0
2
4
6
8
10
0
0.2
0.4
0.6
1
Drain –
our
e Voltage : V
DS
[V]
Drain – Source Voltage : V
DS
[V]
Fig.7 Breakdown Voltage
vs. Junction Temperat
re
F
Typical Transfer Characteristics
00
60
40
2
0
V
GS
= 0V
I
D
= 1mA
Pulsed
V
DS
= 10V
Pulsed
10
1
0.1
T
a
= 125ºC
T
a
= 75ºC
T
a
= 25ºC
T
a
=
–
25ºC
0.01
0.001
0
0.5
1
1.5
2
2.5
3
3.5
-50
0
50
100
150
Junction Temperature : T
j
[
°
C
]
Gate – Source Voltage : V
GS
[V]
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.A
5/10
Data Sheet
RQ3E130MN
l
Electrical characteristic curves
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Fig.10 Transconductance vs. Drain Current
3
100
V
DS
= 10V
Pulsed
V
DS
= 10V
I
D
= 1mA
Pulsed
10
2
1
0
1
T
a
=
–
25ºC
T
a
=25ºC
T
a
=75ºC
T
a
=125ºC
0.1
0.01
-50
0
50
100
150
0.0
0.01
0.1
1
10
100
Junction Temperature : T
j
[
°
C
]
in
urrent : I
D
[A]
Fig.11 Drain Current Derating C
ve
F
2 Static Drain – Source On – State
Resistance vs. Gate Source Voltage
1.2
50
40
30
20
10
0
T
a
=25ºC
Pulsed
1
0.8
0.6
0.
0.2
0
I
D
= 6.5A
I
D
= 13A
-25
0
25
50
75 100
125 150
0
2
4
6
8
10
Gate – Source Voltage : V
GS
[V]
Junction Temperature : T
j
[ºC]
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.A
6/10
Data Sheet
RQ3E130MN
l
Electrical characteristic curves
Fig.13 Static Drain – Source On – State
Resistance vs. Drain Current(I)
Fig.14 Static Drain – Source On – State
Resistance vs. Junction Temperature
20
18
16
14
12
10
8
100
V
GS
= 10V
Pulsed
T
a
=125ºC
T
a
=75ºC
T
a
=25ºC
T
a
=
–
25ºC
10
6
4
V
GS
= 10V
I
D
= 13A
Pulsed
2
0
1
-5
-25
0
25
0 75
100 125 150
0.1
1
10
Drain Current : I
D
[A]
Juncti
Te
perature : T
j
[ºC]
Fig.15 Static Drain – Source On –
tate
Resistance vs. Drain
rrent(II)
100
V
GS
= 4.5V
Pulsed
T
a
=
25ºC
a
75ºC
T
a
=25ºC
T
a
=
–
25ºC
10
1
0.1
1
10
Drain Current : I
D
[A]
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.A
7/10
Data Sheet
RQ3E130MN
l
Electrical characteristic curves
Fig.17 Switching Characteristics
Fig.16 Typical Capacitance
vs. Drain – Source Voltage
10000
10000
1000
100
10
T
a
=25ºC
V
DD
= 15
V
GS
= 10
R
W
P
C
iss
t
f
1000
100
10
t
d(off)
C
oss
C
rss
t
d(on)
T
a
= 25ºC
f = 1MHz
V
GS
= 0V
1
1
0.01
0.1
1
10
100
0.0
0.1
10
100
D
in
urrent : I
D
[A]
Drain – Source Voltage : V
DS
[V]
19 Source Current
vs. Source Drain Voltage
Fig.18 Dynamic Input Characteri
cs
00
10
V
GS
=0V
Pulsed
8
6
4
10
T
a
=125ºC
1
T
a
=75ºC
T
a
=25ºC
T
a
=
–
25ºC
T
a
=25ºC
V
DD
= 15V
0.1
0.01
I
D
= 13A
R
G
=10
W
Pulsed
2
0
0
2
4
6
8
10
0
0.5
Source-Drain Voltage : V
SD
[V]
1
Total Gate Charge : Q
g
[nC]
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.A
8/10
Data Sheet
RQ3E130MN
l
Measurement circuits
Fig.1-1 Switching
Time Measurement Circuit
Fig.1-2
ꢀ
Switching Waveforms
Fig.2-1 Gate
Charge Measurement Circuit
Fig.2-2 Gate
Charge Waveform
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.A
9/10
Data Sheet
RQ3E130MN
l
Dimensions
(Unit : mm)
H
D
A
A
D
b1
HSMT8
A1
c
b
e
x S A
b3
▼
y S
S
b2
Patterm of
in
position areas
[Not a
recomm
nded
ttern of soldering pads]
MIL
TE
S
INCHES
DIM
MIN
0.70
7
2.50
0.10
3.10
2.90
MAX
0.90
0.
0.
2.70
0.30
3.30
3.10
MIN
MAX
0.035
0.002
0.015
0.106
0.012
0.130
0.122
A
A1
b
b1
c
0
028
0.000
0.011
0.098
0.004
0.122
0.114
E
e
0
0.026
H
D
H
E
L
L1
Lp
Lp1
Lp2
x
0
0.07
0.07
0.20
0.25
2.20
–
3.40
3.40
0.25
0.25
0.40
0.45
2.40
0.10
0.10
0.126
0.126
0.003
0.003
0.008
0.010
0.087
–
0.134
0.134
0.010
0.010
0.016
0.018
0.094
0.004
0.004
y
–
–
MILIMETERS
MIN
INCHES
DIM
MAX
0.47
2.70
0.50
0.55
2.40
3.40
MIN
MAX
0.019
0.106
0.020
0.022
0.094
0.134
b2
b3
l1
l2
l3
–
–
–
–
–
–
–
–
–
–
–
–
l4
Dimension in mm/inches
© 2013
ROHM Co., Ltd. All rights reserved.
2013.02 –
Rev.A
10/10
Notice
N o t e s
1) The
information contained herein is subject to change without notice.
2) Before
you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although
ROHM is continuously working to improve product reliability and qualit
y
,
s
emicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safe
measures such as complying with the derating characteristics, implementing redun
an
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall
no
responsibility for any damages arising out of the use of our Poducts beyond the rating specifie
y
ROHM.
4) Examples
of application circuits, circuit constants and any other information con
erein are
provided only to illustrate the standard usage and operations of the Product
peripheral
conditions must be taken into account when designing circuits for mass pro
on.
5) The
technical information specified herein is intended only to sh
the
ic
functions of and
examples of application circuits for the Products. ROHM does not g
you, explicitly or implicitl
y
,
any license to use or exercise intellectual property or other righ
by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any d
arising out of the use of
such technical information.
6) The
Products are intended for use in general electronic eq
ment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment se
as
ll as the applica
on
indicated in
this document.
7) The
Products specified in this document are n
esigned to be radiation
nt.
8) For
use of our Products in applications
iring a high degree of r
bilit
(as exemplified
below), please contact and consult wit
RO
M representative : t
nsport
on equipment (i.e.
cars, ships, trains), primary communicati
equipment, traffic
ghts, fi
/crime prevention, safety
equipment, medical systems, serv
s
olar cells, and power
an
sion systems.
9) Do
not use our Products in a
pli
ions requiring extr
y high reliabilit
y
,
s
uch as aerospace
equipment, nuclear power co
l systems, and subm
re
eaters.
10) ROHM
shall have no
ibility for any
or injury arising
from non-compliance with
the recommended usa
ditions and sp
contained herein.
11) ROHM
has us
reasonable care to ensur
th
accuracy of the information contained
in this
document. Ho
ver, ROHM does not warrants that such information is error-free, and ROHM
shall have no re
onsibility for any d
mages arising from any inaccuracy or misprint of such
informa
12)
se us
he Products in acc
d
ce with any applicable environmental laws and regulations,
as the RoHS Directi
For more details, including RoHS compatibilit
y
,
p
lease contact a
OHM sales office. RO
shall have
no responsibility for any damages or losses resulting
-compliance w
h an
pli
ble laws or regulations.
13) When
provid
our
ducts and technologies contained in this document to other countries,
you must abi
by th
procedures and provisions stipulated in all applicable export laws and
regulations, incl
ng without limitation the US Export Administration Regulations and the Foreign
Exchange and For
ign
T
r
ade Act.
14) This
document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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© 2013
ROHM Co., Ltd. All rights reserved.
R1102
A
