ROHM-Semicon-RSD160P05TL
| Part # | ROHM-Semicon-RSD160P05TL |
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Data Sheet
4V Drive Pch MOSFET
RSD160P05
Structure
Dimensions
(Unit : mm)
Silicon P-channel MOSFET
CPT3
6.5
5.1
(
S
C
–
63)
2.3
<
S
OT
–
428>
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
0.75
0.65
2.3
)
(3)
0.5
1.0
Application
Switching
Packaging specifications
Inner circuit
∗
1
Package
Taping
TL
Type
Code
Basic ordering unit (pieces)
2500
○
∗
2
RSD160P05
(1)
(2)
(3)
(1) Gate
1 ESD PROTECTION DIODE
2 BODY DIODE
(2) Drain
(3) Source
Absolute maximum ratings
(T
a
=
°C)
Parameter
Symbol
V
DSS
V
GSS
I
Limits
45
Unit
V
Drain-source voltage
Gate-source voltage
20
V
ntinuous
16
A
Drain current
Pulsed
*1
P
S
32
16
A
ontinuous
Pulsed
A
Source current
(Body Diode)
*1
*2
I
SP
P
D
T
ch
T
stg
32
A
Power dissipation
20
W
C
C
Channe
rature
150
Ran
of storage temperature
55 to
150
Pw
, Duty cycle
≤
1%
*2
25
C
Thermal resistance
Parameter
Symbol
R
th (ch-c)
Limits
6.25
Unit
*
Channel to Case
C / W
* T
=25
C
c
2011.08 –
Rev.A
© 2011
ROHM Co., Ltd. All rights reserved.
1/6
Data Sheet
ꢀ
RSD160P05
Electrical characteristics
(T
a
= 25°C)
Parameter
Symbol
I
GSS
Min.
Typ.
–
Max.
Unit
A V
GS
=
20V, V
DS
=0V
I
D
=
1mA, V
GS
=0V
A V
DS
=
45V, V
GS
=0V
Conditions
Gate-source leakage
–
10
Drain-source breakdown voltage
V
(BR)DSS
45
–
–
V
Zero gate voltage drain current
Gate threshold voltage
I
DSS
–
–
1
V
GS (th)
1.0
–
3.0
V
V
DS
=
10V, I
D
=
1mA
I
D
=
16A, V
GS
=
10V
I
D
=
8A, V
GS
=
4.5V
I
D
=
8A, V
GS
=
4.0V
I
D
=
8A, V
DS
=
10V
–
35
45
50
–
50
63
70
–
Static drain-source on-state
resistance
*
R
DS (on)
m
–
–
*
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Y
fs
l
8.0
S
C
iss
C
oss
C
rss
–
–
–
–
–
–
–
–
–
–
2000
250
140
13
22
90
50
16.0
5.2
5.0
–
pF V
DS
=
10V
pF V
GS
=0V
–
–
pF f=1MHz
t
d(on)
t
r
t
d(off)
t
f
*
*
*
*
*
*
*
–
ns I
D
=
8.0A, V
5V
ns V
GS
=
ns
=3.
–
Turn-off delay time
Fall time
–
–
ns
Total gate charge
Gate-source charge
Gate-drain charge
Q
g
Q
gs
Q
gd
–
nC
25V
nC I
D
=
16A,
C V
GS
=
5V
–
–
*Pulsed
Body diode characteristics
(Source-Drain) (T
a
= 25
C
Parameter
Forward Voltage
Symbol
Min.
yp.
–
Max.
U
it
V
Conditions
*
V
SD
1.
I
s
=
16A, V
GS
=0V
*Pulsed
© 2011
ROHM Co., Ltd. All rights reserved.
2011.08 –
Rev.A
2/6
Data Sheet
RSD160P05
ꢀ
Electrical characteristic curves
(Ta=25
C)
Fig.2 Typical Output Characteristics (
Ⅱ
)
Fig.1 Typical Output Characteristics (
Ⅰ
)
16
8
7
6
5
4
3
2
1
0
V
GS
=
–
10.0V
V
GS
=
–
4.0V
V
GS
=
–
10.0V
14
V
GS
=
–
4.5V
V
GS
=
–
3.0V
V
GS
=
–
4.0V
12
V
GS
=
–
3.8V
V
GS
=
–
3.2V
10
8
V
GS
=
–
2
V
GS
=
–
3.0V
V
GS
=
–
2.8V
5
°
C
pulsed
6
4
2
T
a
=25
°
C
pulsed
V
GS
=
–
2.5V
0
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
Drain-Source Voltage :
–
V
DS
[V]
in-
ource Voltage :
–
V
DS
[V]
Fig.4 S
ain-Source On-State
esistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
1000
0
100
10
V
GS
=
–
10V
pulsed
T
a
=25
°
C
pulsed
100
10
1
V
GS
=
–
4.0V
V
GS
=
–
4.5V
V
GS
=
–
10V
T
a
=125
°
C
T
a
=75
°
C
T
a
=25
°
C
T
a
=
–
25
°
C
1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Dr
ent :
–
I
D
[A]
Drain Current :
–
I
D
[A]
Fig.5 Sta
On-State Resistance
n Current
1000
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
1000
V
GS
=
–
4.5V
pulsed
V
GS
=
–
4V
pulsed
10
1
100
10
1
T
a
=125
°
C
T
a
=75
°
C
T
a
=25
°
C
T
a
=
–
25
°
C
T
a
=125
°
C
T
a
=75
°
C
T
a
=25
°
C
T
a
=
–
25
°
C
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Drain Current :
–
I
D
[A]
Drain Current :
–
I
D
[A]
© 2011
ROHM Co., Ltd. All rights reserved.
3/6
2011.08 –
Rev.A
Data Sheet
RSD160P05
ꢀ
Fig.8 Typical Transfer Characteristics
Fig.7 Forward Transfer Admittance vs. Drain Current
100
10
100
10
1
V
DS
=
–
10V
pulsed
V
DS
=
–
10V
pulsed
1
0.1
T
a
=125
°
C
T
a
=75
°
C
T
a
=25
°
C
T
a
=
–
25
°
C
0.01
°
C
°
C
T
a
=25
°
C
T
a
=
–
25
°
C
0.001
0.0001
0.00001
0.1
0.0
0.5
1.5
2.0
2.5
3.0
3.5
0.01
0.1
1
10
100
Drain Current :
–
I
D
[A]
te-
urce Voltage :
–
V
GS
[V]
Fig.10 Stati
-Source On-State Re
tance vs. Gate-Source Voltage
0
FIg.9 Source Current vs. Source-Drain Voltage
100
10
V
GS
=0V
pulsed
T
a
=25
°
C
pulsed
400
300
200
100
0
I
D
=
–
1
0A
1
T
a
=125
°
C
T
a
=75
°
C
T
a
=25
°
C
T
a
=
–
25
°
C
I
D
=
–
8.0A
0.1
0.01
0.0
0.5
.0
1.5
0
2
4
6
8
10
12
14
16
18
20
Source
oltage :
–
V
SD
[V]
Gate-Source Voltage :
–
V
GS
[V]
Fig.12 Dynamic Input Characteristics
witching Characterist
10000
100
10
10
V
DD
≒
–
25V
T
a
=25
°
C
V
DD
=
–
25V
I
D
=
–
16A
Pulsed
V
GS
=
–
10V
R
G
=10Ω
T
a
=25
°
C
Pulsed
8
6
4
2
0
t
f
t
d(off)
t
d(on)
t
r
1
0.01
0.1
1
10
100
0
5
10
15
20
25
30
35
40
Drain Current :
–
I
D
[A]
Total Gate Charge :
–
Q
g
[nC]
© 2011
ROHM Co., Ltd. All rights reserved.
4/6
2011.08 –
Rev.A
Data Sheet
RSD160P05
ꢀ
FIg.13 Typical Capacitance vs. Drain-Source Voltage
Fig.14 Maximum
Safe Operating Area
100000
10000
1000
100
100
10
1
Operation in this area is limited by R
DS(on)
T
a
=25
°
C
f=1MHz
V
GS
=0V
(V
GS
=
–
10V)
P
W
= 100μs
C
iss
C
oss
P
W
= 1ms
C
rss
P
W
= 10ms
10
DC Operation
T
c
=25
°
C
Single Pulse
1
0.1
0.01
0.1
1
10
100
0.1
10
100
Drain-Source Voltage :
–
V
DS
[V]
in-
urce Voltage :
–
V
DS
[ V ]
Fig.15 Normalized
Transient Thermal Resistance
v.s. Pulse
Width
10
T
C
=25
°
C
Single Pulse
1
0.1
0.01
Rth
(ch-c)
C/W
Rth
(ch
(t)=r(t)
×
Rth
(ch-c)
0.001
0.0001 0.001
0.01
0.1
10
100
100
P
dth
Pw (s)
© 2011
ROHM Co., Ltd. All rights reserved.
5/6
2011.08 –
Rev.A
Data Sheet
ꢀ
RSD160P05
Measurement circuits
Pulse width
I
D
V
V
GS
10%
50%
V
DS
V
GS
50%
90%
R
L
D.U.T.
10%
90%
10%
90%
V
DD
R
G
DS
t
d(on)
t
d(off)
t
r
t
f
t
on
t
off
Fig.1-1 Switching
Time Measurement Circuit
Fig.1-2 Switching
Waveforms
V
G
I
D
V
DS
Q
g
V
GS
R
L
V
GS
D.U.T.
I
G(Const.)
Q
gs
Q
gd
V
DD
Ch
Fig.2-1 Gate
Charge Measurement Circuit
Fig.2-2 Gate
Char
avef
m
© 2011
ROHM Co., Ltd. All rights reserved.
2011.08 –
Rev.A
6/6
Notice
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© 2011
ROHM Co., Ltd. All rights reserved.
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